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A1013 Datasheet, Equivalent, Epitaxial Transistor.Silicon PNP Epitaxial Transistor Silicon PNP Epitaxial Transistor |
| Part | A1013 |
|---|---|
| Description | Silicon PNP Epitaxial Transistor |
| Feature | A1013 A1013 Silicon PNP Epitaxial Transi stor Description :The A1013 is designed for color TV class B sound output appl ications Features: •High voltage: VCE O=160V •Complementary to C2383 Chip A ppearance Chip Size Chip Thickness Bond ing Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100 um×1100um 210±20um 240um×240um Emit ter 330um×260um Al Au 60um 6 inch Ele ctrical Characteristics( Ta=25℃) Char acteristic Collector Cutoff Current Emi tter Cutoff Current Collector-Base Brea kdown Voltage Collector-Emitter Breakdo wn Voltage Emitter-Base Breakdown Volta ge DC Current Gain Colle . |
| Manufacture | Shanghai |
| Datasheet |
| Part | A1013 |
|---|---|
| Description | Silicon PNP Epitaxial Transistor |
| Feature | A1013 A1013 Silicon PNP Epitaxial Transi stor Description :The A1013 is designed for color TV class B sound output appl ications Features: •High voltage: VCE O=160V •Complementary to C2383 Chip A ppearance Chip Size Chip Thickness Bond ing Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100 um×1100um 210±20um 240um×240um Emit ter 330um×260um Al Au 60um 6 inch Ele ctrical Characteristics( Ta=25℃) Char acteristic Collector Cutoff Current Emi tter Cutoff Current Collector-Base Brea kdown Voltage Collector-Emitter Breakdo wn Voltage Emitter-Base Breakdown Volta ge DC Current Gain Colle . |
| Manufacture | Shanghai |
| Datasheet |
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