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2SA1306 Datasheet, Equivalent, PNP Transistor.

Silicon PNP Transistor

Silicon PNP Transistor

 

 

 

Part 2SA1306
Description Silicon PNP Transistor
Feature : SILICON PNP EPITAXIAL TYPE (PCT PROCES S) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AM PLIFIER APPLICATIONS.
FEATURES .
High T ransition Frequency : ff=100MHz (Typ.
) .
Complementary to 2SC3298, 2SC3298A, 2 S C3298B MAXIMUM RATINGS (Ta=25°C) C HARACTERISTIC SYMBOL Collector-Base V oltage 2SA1306 2SA1306A 2SA1306B VcBO Collector-Emitter Voltage 2SA1306 2S A1306A 2SA1306B v CEO Emitter-Base Vo ltage Collector Current VeBO ic Base Current Collector Power Dissipation (Tc =25°C) Junction Temperature Storage Te mperature Range IB PC T J T stg RATIN G -160 -180 -200 .
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Datasheet
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Part 2SA1306
Description Silicon PNP Transistor
Feature : SILICON PNP EPITAXIAL TYPE (PCT PROCES S) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AM PLIFIER APPLICATIONS.
FEATURES .
High T ransition Frequency : ff=100MHz (Typ.
) .
Complementary to 2SC3298, 2SC3298A, 2 S C3298B MAXIMUM RATINGS (Ta=25°C) C HARACTERISTIC SYMBOL Collector-Base V oltage 2SA1306 2SA1306A 2SA1306B VcBO Collector-Emitter Voltage 2SA1306 2S A1306A 2SA1306B v CEO Emitter-Base Vo ltage Collector Current VeBO ic Base Current Collector Power Dissipation (Tc =25°C) Junction Temperature Storage Te mperature Range IB PC T J T stg RATIN G -160 -180 -200 .
Manufacture Toshiba
Datasheet
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2SA1306

2SA1306
2SA1306

2SA1306

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