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MOS Driver. DS0026 Datasheet

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MOS Driver. DS0026 Datasheet






DS0026 Driver. Datasheet pdf. Equivalent




DS0026 Driver. Datasheet pdf. Equivalent





Part

DS0026

Description

Dual High-Speed MOS Driver



Feature


DS0026 Dual High-Speed MOS Driver Febru ary 2000 DS0026 Dual High-Speed MOS Dr iver General Description DS0026 is a lo w cost monolithic high speed two phase MOS clock driver and interface circuit. Unique circuit design provides both ve ry high speed operation and the ability to drive large capacitive loads. The d evice accepts standard TTL outputs and converts them to M.
Manufacture

National

Datasheet
Download DS0026 Datasheet


National DS0026

DS0026; OS logic levels. The device may be drive n from standard 54/74 series and 54S/74 S series gates and flip-flops or from d rivers such as the DS8830 or DM7440. Th e DS0026 is intended for applications i n which the output pulse width is logic ally controlled; i.e., the output pulse width is equal to the input pulse widt h. The DS0026 is designed to fulfill a wide variety of MO.


National DS0026

S interface requirements. Information on the correct usage of the DS0026 in the se as well as other systems is included in the application note AN-76. Featur es n n n n n Fast rise and fall times β €” 20 ns 1000 pF load High output swing β€” 20V High output current drive β€” Β± 1.5 amps TTL compatible inputs High rep rate β€” 5 to 10 MHz depending on p ower dissipation n Low powe.


National DS0026

r consumption in MOS β€œ0” state β€” 2 mW n Drives to 0.4V of GND for RAM add ress drive Connection Diagrams (Top Vi ews) Dual-In-Line Package DS005853-2 Order Number DS0026CN See NS Package Nu mber N08E Β© 2000 National Semiconduct or Corporation DS005853 www.national. com DS0026 Absolute Maximum Ratings ( Note 1) If Military/Aerospace specified devices are required, pl.

Part

DS0026

Description

Dual High-Speed MOS Driver



Feature


DS0026 Dual High-Speed MOS Driver Febru ary 2000 DS0026 Dual High-Speed MOS Dr iver General Description DS0026 is a lo w cost monolithic high speed two phase MOS clock driver and interface circuit. Unique circuit design provides both ve ry high speed operation and the ability to drive large capacitive loads. The d evice accepts standard TTL outputs and converts them to M.
Manufacture

National

Datasheet
Download DS0026 Datasheet




 DS0026
February 2000
DS0026
Dual High-Speed MOS Driver
General Description
DS0026 is a low cost monolithic high speed two phase MOS
clock driver and interface circuit. Unique circuit design pro-
vides both very high speed operation and the ability to drive
large capacitive loads. The device accepts standard TTL out-
puts and converts them to MOS logic levels. The device may
be driven from standard 54/74 series and 54S/74S series
gates and flip-flops or from drivers such as the DS8830 or
DM7440. The DS0026 is intended for applications in which
the output pulse width is logically controlled; i.e., the output
pulse width is equal to the input pulse width.
The DS0026 is designed to fulfill a wide variety of MOS inter-
face requirements. Information on the correct usage of the
DS0026 in these as well as other systems is included in the
application note AN-76.
Features
n Fast rise and fall times β€” 20 ns 1000 pF load
n High output swing β€” 20V
n High output current drive β€” Β±1.5 amps
n TTL compatible inputs
n High rep rate β€” 5 to 10 MHz depending on power
dissipation
n Low power consumption in MOS β€œ0” state β€” 2 mW
n Drives to 0.4V of GND for RAM address drive
Connection Diagrams (Top Views)
Dual-In-Line Package
DS005853-2
Order Number DS0026CN
See NS Package Number N08E
Β© 2000 National Semiconductor Corporation DS005853
www.national.com




 DS0026
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V+ βˆ’ Vβˆ’ Differential Voltage
Input Current
Input Voltage (VIN βˆ’ Vβˆ’)
Peak Output Current
22V
100 mA
5.5V
1.5A
Maximum Power Dissipation* at TA =
25˚C
420mW
Operating Temperature Range
0˚C to +70˚C
Storage Temperature Range
βˆ’65˚C to +150˚C
Lead Temperature
(Soldering, 10 sec.)
300˚C
Note: *Derate N08E package 9.3 mW/˚C for TA above 25˚C.θJA = 107˚C/W
Electrical Characteristics (Notes 2, 3, 4)
Symbol
VIH
IIH
VIL
IIL
VOL
VOH
Parameter
Logic β€œ1” Input Voltage
Logic β€œ1” Input Current
Logic β€œ0” Input Voltage
Logic β€œ0” Input Current
Logic β€œ1” Output Voltage
Logic β€œ0” Output Voltage
ICC(ON)
ICC(OFF)
β€œON” Supply Current
(one side on)
β€œOFF” Supply Current
Conditions
Vβˆ’ = 0V
VIN βˆ’ Vβˆ’ = 2.4V
Vβˆ’ = 0V
VIN βˆ’ Vβˆ’ = 0V
VIN βˆ’ Vβˆ’ = 2.4V, IOL = 1 mA
VIN βˆ’ Vβˆ’ = 0.4V, VSS β‰₯ V+ + 1.0V
IOH = βˆ’ 1 mA
V+ βˆ’ Vβˆ’ = 20V, VIN βˆ’ Vβˆ’ = 2.4V
V+ βˆ’ Vβˆ’ = 20V,
VIN βˆ’ Vβˆ’ = 0V
Min
2
V+ βˆ’ 1.0
Typ
1.5
10
0.6
βˆ’3
Vβˆ’+0.7
V+βˆ’0.8
Max
15
0.4
βˆ’10
Vβˆ’+1.0
Units
V
mA
V
Β΅A
V
V
30 40 mA
10 100 Β΅A
Switching Characteristics
(TA = 25˚C) (Notes 5, 6)
Symbol
Parameter
Conditions
Min Typ Max Units
tON
Turn-On Delay
(Figure 1)
(Figure 2)
5 7.5 12
11
ns
ns
tOFF
Turn-Off Delay
(Figure 1)
(Figure 2)
12 15
13
ns
ns
tr
Rise Time
(Figure 1),
CL = 500 pF
(Note 5)
CL = 1000 pF
(Figure 2),
CL = 500 pF
(Note 5)
CL = 1000 pF
tf Fall Time
(Figure 1),
CL = 500 pF
(Note 5)
CL = 1000 pF
(Figure 2),
CL = 500 pF
(Note 5)
CL = 1000 pF
15 18
20 35
30 40
36 50
12 16
17 25
28 35
31 40
ns
ns
ns
ns
ns
ns
ns
ns
Note 1: β€œAbsolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. Except for β€œOperating Temperature Range” they
are not meant to imply that the devices should be operated at these limits. The table of β€œElectrical Characteristics provides conditions for actual device operation.
Note 2: These specifications apply for V+ βˆ’ Vβˆ’ = 10V to 20V, CL = 1000 pF, over the temperature range of 0˚C to +70˚C for the DS0026CN.
Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.
Note 4: All typical values for TA = 25˚C.
Note 5: Rise and fall time are given for MOS logic levels; i.e., rise time is transition from logic β€œ0” to logic β€œ1” which is voltage fall.
Note 6: The high current transient (as high as 1.5A) through the resistance of the internal interconnecting Vβˆ’ lead during the output transition from the high state to
the low state can appear as negative feedback to the input. If the external interconnecting lead from the driving circuit to Vβˆ’ is electrically long, or has significant dc
resistance, it can subtract from the switching response.
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2




 DS0026
Typical VBB Connection
Typical Performance Characteristics
DS005853-8
Input Current vs Input Voltage
Supply Current vs Temperature
Turn-On and Turn-Off Delay
vs Temperature
Rise Time vs Load
Capacitance
DS005853-22
DS005853-23
Fall Time vs Load
Capacitance
DS005853-24
DS005853-25
DS005853-26
3 www.national.com






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