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Encapsulate Transistors. 3CD3001 Datasheet

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Encapsulate Transistors. 3CD3001 Datasheet






3CD3001 Transistors. Datasheet pdf. Equivalent




3CD3001 Transistors. Datasheet pdf. Equivalent





Part

3CD3001

Description

TO-251 Plastic Encapsulate Transistors



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 FEATURES Power dis sipation PCM: 1.2 W (Tamb=25℃) 1. BAS E 2. COLLECTOR 3EMITTER TRANSISTOR (NP N) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temper ature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERIST.
Manufacture

Jiangsu Changjiang

Datasheet
Download 3CD3001 Datasheet


Jiangsu Changjiang 3CD3001

3CD3001; ICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter br eakdown voltage Emitter-base breakdown voltage Collector cut-off current Colle ctor cut-off current Emitter cut-off cu rrent Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation vol tage Base-emitter saturation voltage Ba se-emitter voltage V.


Jiangsu Changjiang 3CD3001

CE(sat) VBE(sat) VBE 1 2 3 unless ot herwise specified) Test conditions MIN 600 400 7 100 200 100 10 5 0.5 1.2 1.1 V V V 40 TYP MAX UNIT V V V µA µA µA Ic= 100µA , IE=0 IC= 1 mA , IB=0 IE= 100 µA, IC=0 VCB= 600 V , IE=0 VCE= 4 00 V , IB=0 VEB= 7 V , IC=0 VCE= 20 V, IC= 20mA VCE= 10V, IC= 0.25 mA IC= 50m A, IB= 10 mA IC= 50 mA, IB= 10mA IE= 10 0 mA, VCE= 20 V, IC=20m.


Jiangsu Changjiang 3CD3001

A Transition frequency fT f = 1MHz IC= 50mA, IB1=-IB2=5mA, 8 MHz Fall time Storage time tf tS 0.3 1.5 µs µs VCC=45V CLASSIFICATION OF hFE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35- 40 .

Part

3CD3001

Description

TO-251 Plastic Encapsulate Transistors



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 FEATURES Power dis sipation PCM: 1.2 W (Tamb=25℃) 1. BAS E 2. COLLECTOR 3EMITTER TRANSISTOR (NP N) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temper ature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERIST.
Manufacture

Jiangsu Changjiang

Datasheet
Download 3CD3001 Datasheet




 3CD3001
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1.2 W (Tamb=25)
Collector current
ICM: 0.2
Collector-base voltage
A
V(BR)CBO:
600 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
TO-251
1. BASE
2. COLLECTOR
3EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
600
Collector-emitter breakdown voltage V(BR)CEO
IC= 1 mA , IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 µA, IC=0
7
Collector cut-off current
ICBO VCB= 600 V , IE=0
100
Collector cut-off current
Emitter cut-off current
ICEO VCE= 400 V , IB=0
IEBO VEB= 7 V , IC=0
200
100
DC current gain
hFE(1)
hFE(2)
VCE= 20 V, IC= 20mA
VCE= 10V, IC= 0.25 mA
10
5
40
Collector-emitter saturation voltage
VCE(sat) IC= 50mA, IB= 10 mA
0.5
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
VBE(sat)
VBE
fT
tf
tS
IC= 50 mA, IB= 10mA
IE= 100 mA,
VCE= 20 V, IC=20mA
f = 1MHz
IC=50mA,
IB1=-IB2=5mA,
VCC=45V
8
1.2
1.1
0.3
1.5
UNIT
V
V
V
µA
µA
µA
V
V
V
MHz
µs
µs




 3CD3001
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40










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