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Bridge Rectifier. 3KBP06M Datasheet

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Bridge Rectifier. 3KBP06M Datasheet
















3KBP06M Rectifier. Datasheet pdf. Equivalent













Part

3KBP06M

Description

Glass Passivated Single-Phase Bridge Rectifier



Feature


3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KB P06M, 3KBP08M www.vishay.com Vishay G eneral Semiconductor Glass Passivated Single-Phase Bridge Rectifier − ~ ~ + Case Style KBPM +~~− PRIMARY CHAR ACTERISTICS Package KBPM IF(AV) 3.0 A VRRM 50 V, 100 V, 200 V, 400 V, 60 0 V, 800 V IFSM 80 A IR 5 μA VF at IF = 3.0 A 1.05 V TJ max. 150 °C Diode variations In-Lin.
Manufacture

Vishay

Datasheet
Download 3KBP06M Datasheet


Vishay 3KBP06M

3KBP06M; e FEATURES • UL recognition file num ber E54214 • Ideal for printed circu it board • High surge current capabil ity e4 • High case dielectric stren gth • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categori zation: For definitions of compliance p lease see www.vishay.com/doc?99912 TYP ICAL APPLICATIONS General purpose use i n AC/DC bridge full wave rectif.


Vishay 3KBP06M

ication for switching power supply, home appliances, office equipment, and tele communication applications. MECHANICAL DATA Case: KBPM Molding compound meets UL 94 V-0 flammability rating Base P/N -E4 - RoHS-compliant, commercial grade Terminals: Silver plated leads, soldera ble per J-STD-002 and JESD22-B102 Polar ity: As marked on body  MAXIMUM RATINGS (TA = 25 °C un.


Vishay 3KBP06M

less otherwise noted) PARAMETER SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP0 6M 3KBP08M UNIT Maximum repetitive pea k reverse voltage Maximum RMS voltage VRRM VRMS 50 35 100 200 400 600 800 V 70 140 280 420 560 V Maximum DC block ing voltage Maximum average forward out put rectified current at TA = 55 °C (F ig. 1) Peak forward surge current 50 Hz single half  sine.





Part

3KBP06M

Description

Glass Passivated Single-Phase Bridge Rectifier



Feature


3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KB P06M, 3KBP08M www.vishay.com Vishay G eneral Semiconductor Glass Passivated Single-Phase Bridge Rectifier − ~ ~ + Case Style KBPM +~~− PRIMARY CHAR ACTERISTICS Package KBPM IF(AV) 3.0 A VRRM 50 V, 100 V, 200 V, 400 V, 60 0 V, 800 V IFSM 80 A IR 5 μA VF at IF = 3.0 A 1.05 V TJ max. 150 °C Diode variations In-Lin.
Manufacture

Vishay

Datasheet
Download 3KBP06M Datasheet




 3KBP06M
3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
~
~
+
Case Style KBPM
+~~−
PRIMARY CHARACTERISTICS
Package
KBPM
IF(AV)
3.0 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V, 800 V
IFSM
80 A
IR 5 μA
VF at IF = 3.0 A
1.05 V
TJ max.
150 °C
Diode variations
In-Line
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
e4
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
50
35
100 200 400 600 800 V
70 140 280 420 560 V
Maximum DC blocking voltage
Maximum average forward output rectified
current at TA = 55 °C (Fig. 1)
Peak forward surge current 50 Hz single half
sine-wave superimposed on rated load
Rating for fusing (t < 10 ms)
VDC
IF(AV)
IFSM
I2t
50
100 200 400 600 800 V
3.0 A
80 A
32 A2s
Operating junction and storage temperature
range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
3KBP005M
3KBP01M
3KBP02M
3KBP04M
3KBP06M
3KBP08M
Maximum instantaneous
forward voltage drop per
diode
3.0 A
VF
1.05
Maximum DC reverse
current at rated DC
blocking voltage per diode
TJ = 25 °C
TJ = 125 °C
IR
5.0
500
Typical junction
capacitance per diode
4.0 V,
1 MHz
CJ
25
UNIT
V
μA
pF
Revision: 27-Jun-13
1 Document Number: 88888
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 3KBP06M
3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M UNIT
Typical thermal resistance (1)
RJA
RJL
30
°C/W
11
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
3KBP06M-E4/51
1.912
PACKAGE CODE
51
BASE QUANTITY
600
DELIVERY MODE
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
4
60 Hz
Resistive or
Inductive Load
3
With Heat Sink
2
Without Heat Sink
1
Heat Sink Mounting:
3.0 x 3.0 x 0.11" Thick
(7.5 x 7.5 x 0.3 cm) Al. Plate
0
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
10
TJ = 150 °C
1
TJ = 125 °C
0.1
TJ = 25 °C
0.01
0.4
0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
1.2
Fig. 3 - Typical Forward Characteristics Per Diode
100
80
60
40
20
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
0.01
10
TJ = 25 °C
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Forward Characteristics Per Diode
Revision: 27-Jun-13
2 Document Number: 88888
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 3KBP06M
3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1 1 10 100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.125 x 45°
(3.2)
Case Style KBPM
0.600 (15.24)
0.560 (14.22)
0.460 (11.68) 0.500 (12.70)
0.420 (10.67) 0.460 (11.68)
0.60
(15.2)
MIN.
0.034 (0.86)
0.028 (0.76)
DIA.
0.200 (5.08)
0.180 (4.57)
0.50 (12.7) MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Revision: 27-Jun-13
3 Document Number: 88888
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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