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Transistor Array. M54564P Datasheet

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Transistor Array. M54564P Datasheet
















M54564P Array. Datasheet pdf. Equivalent













Part

M54564P

Description

8 Unit 500mA Source Type Darlington Transistor Array



Feature


MITSUBISHI SEMICONDUCTOR M54564P/FP 8-UNIT 500mA SOURCE TYP E DARLINGTON TRANSISTOR ARRAY DESCRIPTI ON M54564P and M54564FP are eight-circu it output-sourcing Darlington transisto r arrays. The circuits are made of PNP and NPN transistors. Both the semicondu ctor integrated circuits perform high-c urrent driving with extremely low input current supply. PI.
Manufacture

Mitsubishi

Datasheet
Download M54564P Datasheet


Mitsubishi M54564P

M54564P; N CONFIGURATION FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Io(max) = –500mA) With outpu t pulldown resistance (Driving availabl e with fluorescent display tube) Drivin g available with PMOS IC output or with TTL output Wide operating temperature range (Ta = –20 to +75°C) Output cur rent-sourcing type         INPUT          IN1.


Mitsubishi M54564P

→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 VS 9 18 O1  17 →O2   16 →O3  15 →O4  14 →O5  13 →O6  12 →O7  11 →O8      OUTPUT     Package typ e 18P4G(P) APPLICATION Drives of relay s, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors FUNCTION The M545.


Mitsubishi M54564P

64P and M54564FP each have eight circuit s, which are made of input inverters an d current-sourcing outputs. The outputs are made of PNP transistors and NPN Da rlington transistors. The PNP transisto r base current is constant. Resistance of 50k Ω is connected between each ou tput pin and GND, making these ICs suit able for fluorescent display tubes. VS and GND are used com.





Part

M54564P

Description

8 Unit 500mA Source Type Darlington Transistor Array



Feature


MITSUBISHI SEMICONDUCTOR M54564P/FP 8-UNIT 500mA SOURCE TYP E DARLINGTON TRANSISTOR ARRAY DESCRIPTI ON M54564P and M54564FP are eight-circu it output-sourcing Darlington transisto r arrays. The circuits are made of PNP and NPN transistors. Both the semicondu ctor integrated circuits perform high-c urrent driving with extremely low input current supply. PI.
Manufacture

Mitsubishi

Datasheet
Download M54564P Datasheet




 M54564P
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54564P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54564P and M54564FP are eight-circuit output-sourcing
PIN CONFIGURATION
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
IN1
1
IN2
2
IN33
18
O1
17
O2
16 O3

IN44
15 O4
INPUT
OUTPUT
IN5
5
14
O5
FEATURES
High breakdown voltage (BVCEO 50V)
High-current driving (Io(max) = –500mA)
mWith output pulldown resistance (Driving available with
ofluorescent display tube)
Driving available with PMOS IC output or with TTL output
.cWide operating temperature range (Ta = –20 to +75°C)
Output current-sourcing type
t4UAPPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
eand lamps, and interfaces between MOS-bipolar logic sys-
etems and relays, solenoids, or small motors
ShFUNCTION
taThe M54564P and M54564FP each have eight circuits,
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN
aDarlington transistors. The PNP transistor base current is
constant. Resistance of 50kis connected between each
.Doutput pin and GND, making these ICs suitable for fluores-
cent display tubes. VS and GND are used commonly among
the eight circuits.
wOutput current is 500mA maximum. Supply voltage VS is 50V
maximum.
wThe M54564FP is enclosed in a molded small flat package,
wenabling space-saving design.
IN6
6
IN77
IN88
VS 9
13
O6
12 O7
11 O8
10 GND
Package type 18P4G(P)
NC 1
IN1
2
IN2
3
IN34
INPUT
IN4
5
IN5
6
IN6
7
IN78
IN89
VS 10
20 NC
19
O1
18
O2
17
O3
16 O4
OUTPUT
15
O5
14
O6
13 O7
12 O8
11 GND
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
20K
INPUT
8K
20K
7.2K
1.5K
3K
VS
OUTPUT
50K
GND
The eight circuits share the VS and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
www.DAuagt.a19S99heet4U.com




 M54564P
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54564P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
VS
VI
IO
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Output, L
Conditions
Current per circuit output, H
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
50
–0.5 ~ +30
–500
1.79(P)/1.10(FP)
–20 ~ +75
–55 ~ +125
Unit
V
V
V
mA
W
°C
°C
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Limits
min typ max Unit
VS Supply voltage
0—
50 V
Output current Duty Cycle
IO
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
P : no more than 8%
FP : no more than 5%
Duty Cycle
P : no more than 55%
0 — –350
mA
0 — –100
multaneously)
FP : no more than 30%
VIH “H” input voltage
2.4 —
25 V
VIL “L” input voltage
0—
0.2 V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Test conditions
Limits
min
typ+
Unit
max
IS (leak) Supply leak current
VS = 50V, VI = 0.2V
— — 100 µA
VS = 10V, VI = 2.4V, IO = –350mA
VCE (sat) Collector-emitter saturation voltage
VS = 10V, VI = 2.4V, IO = –100mA
— 1.6 2.4
— 1.45 2.0 V
II Input current
VI = 5V, VS = 10V
VI = 25V, VS = 30V
— 0.4 0.7
mA
— 2.9 6.5
IS Supply current
VS = 50V, VI = 5V
— — 5.0 mA
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton Turn-on time
toff Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min typ max
185 —
ns
4300
ns
Aug. 1999




 M54564P
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54564P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
VS
Measured device
PG
OUTPUT
50%
INPUT
50
RL CL
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50
VI = 0 to 2.4V
(2) Input-output conditions : RL = 30, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
OUTPUT
50%
ton
50%
50%
toff
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
M54564P
1.5
M54564FP
1.0
0.5
0
0 25 50 75 100
Ambient temperature Ta (°C)
Duty-Cycle-Output Current Characteristics
(M54564P)
–500
Œ
–400

–300
Ž
–200
•The output current values
–100
represent the current per circuit.
•Repeated frequency 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
0 •Ta = 25°C
0 20 40 60 80


‘
’
“
100
Duty cycle (%)
–500
–400
–300
Output Saturation Voltage
Output Current Characteristics
VS = 10V
VI = 2.4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
–200
–100
00 0.5 1.0 1.5 2.0 2.5
Output saturation voltage VCE (sat) (V)
Duty-Cycle-Output Current Characteristics
(M54564P)
–500
–400
Œ
–300
–200
•The output current values
–100
represent the current per circuit.
•Repeated frequency 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
0 •Ta = 75°C
0 20 40 60
80

Ž


’
‘
“
100
Duty cycle (%)
Aug. 1999




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