DatasheetsPDF.com

N-Channel MOSFET. 2SK3374 Datasheet

DatasheetsPDF.com

N-Channel MOSFET. 2SK3374 Datasheet
















2SK3374 MOSFET. Datasheet pdf. Equivalent













Part

2SK3374

Description

N-Channel MOSFET



Feature


2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) 2S K3374 Switching Regulator Applications · · · · Low drain-source ON resista nce: RDS (ON) = 4.0 W (typ.) High forwa rd transfer admittance: ïYfsï = 0.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mo del: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximu.
Manufacture

Panasonic

Datasheet
Download 2SK3374 Datasheet


Panasonic 2SK3374

2SK3374; m Ratings (Ta = 25°C) Characteristics D rain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Sym bol VDSS VDGR VGSS ID IDP PD EAS IAR EA R Tch Tstg Rating 450 450 ±30 1 2 1.3 122 1 0.13 150 -55 to150 Unit V V V A A W mJ A mJ °C °C Drain power dissipa tion Single pulse avalanche energy (Not e 2) Avalanche current.


Panasonic 2SK3374

Repetitive avalanche energy (Note 3) Ch annel temperature Storage temperature r ange JEDEC JEITA TOSHIBA ― ― 2-8M 1B Weight: 0.54 g (typ.) Thermal Char acteristics Characteristics Thermal res istance, channel to ambient Symbol Rth (ch-a) Max 96.1 Unit °C/W Note 1: Ple ase use devices on condition that the c hannel temperature is below 150°C. Not e 2: VDD = 90 V, Tch = 2.


Panasonic 2SK3374

5°C (initial), L = 203 mH, RG = 25 W, I AR = 1 A Note 3: Repetitive rating: pul se width limited by maximum channel tem perature This transistor is an electros tatic sensitive device. Please handle w ith caution. 1 2002-08-09 2SK3374 El ectrical Characteristics (Ta = 25°C) C haracteristics Gate leakage current Dra in-source breakdown voltage Drain cut-O FF current Drain-sou.





Part

2SK3374

Description

N-Channel MOSFET



Feature


2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) 2S K3374 Switching Regulator Applications · · · · Low drain-source ON resista nce: RDS (ON) = 4.0 W (typ.) High forwa rd transfer admittance: ïYfsï = 0.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mo del: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximu.
Manufacture

Panasonic

Datasheet
Download 2SK3374 Datasheet




 2SK3374
2SK3374
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV)
2SK3374
Switching Regulator Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.)
· High forward transfer admittance: ïYfsï = 0.8 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
450
450
±30
1
2
1.3
122
1
0.13
150
-55 to150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (ch-a)
96.1 °C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 W, IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-08-09




 2SK3374
2SK3374
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 mA, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min
¾
±30
¾
450
2.0
¾
0.3
¾
¾
¾
tr VG1S0 V
0V
ton
ID = 0.5 A VOUT
RL = 400 W
¾
¾
tf
Duty <= 1%, tw = 10 ms VDD ~- 200 V
toff
¾
¾
Typ.
¾
¾
¾
¾
¾
3.7
0.7
180
2
20
7
15
30
70
Max
±10
¾
100
¾
4.0
4.6
¾
¾
¾
¾
¾
¾
¾
¾
Unit
mA
V
mA
V
V
W
S
pF
ns
Qg
Qgs VDD ~- 360 V, VGS = 10 V, ID = 1 A
Qgd
¾5¾
¾ 3 ¾ nC
¾2¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾¾ 1 A
¾¾ 2 A
¾ ¾ -1.7 V
¾ 350 ¾
ns
¾ 1.3 ¾ nC
Marking
K3374
Type
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2 2002-08-09




 2SK3374
1.0
Common source
Ta = 25°C
pulse test
0.8
ID - VDS
10 5.75
6.0
8.0
5.5
0.6 5.25
0.4 5.0
4.75
0.2 VGS = 4.5 V
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
2.0
Common source
VDS = 20 V
pulse test
1.6
ID - VGS
1.2
0.8
100
0.4
25 Ta = -55°C
0
02 46 8
Gate-source voltage VGS (V)
10
2SK3374
ID - VDS
2.0
10 8.0
6.25
Common source
Ta = 25°C
pulse test
1.6
6.0
1.2 5.75
5.5
0.8
5.25
0.4 5.0
VGS = 4.5 V
0
0 10 20 30 40 50
Drain-source voltage VDS (V)
VDS - VGS
20
Common source
Ta = 25°C
pulse test
16
12
8
ID = 1 A
4
0.25
0.5
0
0 4 8 12 16 20
Gate-source voltage VGS (V)
5
Common source
3 VDS = 20 V
pulse test
1
0.5
0.3
ïYfsï - ID
Ta = -55°C 25
100
0.1
0.05
0.03
0.01
0.01
0.03
0.1
0.3 1
Drain current ID (A)
3
10
50
Common source
30 Ta = 25°C
Pulse test
RDS (ON) - ID
10
5
3
1
0.1
0.3 0.5
1
35
10
Drain current ID (A)
3 2002-08-09




Recommended third-party 2SK3374 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)