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Transistors. KTC3198 Datasheet

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Transistors. KTC3198 Datasheet
















KTC3198 Transistors. Datasheet pdf. Equivalent













Part

KTC3198

Description

Transistors



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-92 Plastic-Encapsulate T ransistors KTC3198 TRANSISTOR£¨NPN £© TO¡ª 92 FEATURE Power dissipat ion PCM : 0.625 W£¨ Tamb=25¡æ£© C ollector current ICM : 0.15 A Collector -base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T stg: -55¡æto +150¡æ TJ : 150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=2.
Manufacture

Jiangsu Changjiang

Datasheet
Download KTC3198 Datasheet


Jiangsu Changjiang KTC3198

KTC3198; 5¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown vo ltage Emitter-base breakdown voltage Co llector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR) EBO ICBO IEBO 1.EMITTER 2. COLLECTOR 3. BASE 1 2 3 unless Test otherwise MIN 60 50 5 specified£© TYP MAX UNI T V V V 0.1 0.1 ¦Ì A ¦Ì A conditio ns Ic= 100¦Ì A £¬IE=0 IC=.


Jiangsu Changjiang KTC3198

5 mA , IB=0 IE= 100¦Ì A£¬IC=0 VCB=60 V , IE=0 VEB= 5V , IC=0 hFE(1) DC curr ent gain VCE=6 V, IC= 2mA VCE=6 V, IC= 150m A IC= 100mA, IB= 10 mA IC= 100mA, IB= 10 mA VCE= 10 V, IC= 1mA 70 25 10 0 0.1 700 hFE(2) Collector-emitter sa turation voltage Base-emitter saturatio n voltage VCE(sat) VBE(sat) 0.25 1 V V Transition frequency f T 80 F=30M Hz MHz CLASSIFICATIO.


Jiangsu Changjiang KTC3198

N OF hFE(1) Rank Range O 70-140 Y 120-24 0 GR 200-400 BL 350-700 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b ¦Õ e e1 Symbol A A1 b c D D1 E e e1 L Ö Dimensions In Millimeters Min 3. 300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.5 00 1.600 0.380 4.700 Max 3.700 1.400 0. 550 0.510 4.700 Min L Dimensions In I nches Max 0.146 0.055.





Part

KTC3198

Description

Transistors



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-92 Plastic-Encapsulate T ransistors KTC3198 TRANSISTOR£¨NPN £© TO¡ª 92 FEATURE Power dissipat ion PCM : 0.625 W£¨ Tamb=25¡æ£© C ollector current ICM : 0.15 A Collector -base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T stg: -55¡æto +150¡æ TJ : 150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=2.
Manufacture

Jiangsu Changjiang

Datasheet
Download KTC3198 Datasheet




 KTC3198
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTC3198 TRANSISTOR NPN
TO 92
FEATURE
Power dissipation
PCM : 0.625 W Tamb=25
Collector current
ICM : 0.15 A
Collector-base voltage
V(BR)CBO : 60
V
Operating and storage junction temperature range
Tstg: -55 to +150
TJ : 150
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=5 mA , IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
5
V
Collector cut-off current
ICBO VCB=60V , IE=0
0.1 A
Emitter cut-off current
IEBO VEB= 5V , IC=0
0.1 A
DC current gain
hFE(1)
hFE(2)
VCE=6 V, IC= 2m A
70
700
VCE=6 V, IC= 150m A 25 100
Collector-emitter saturation voltage
VCE(sat)
IC= 100mA, IB= 10 mA
0.1 0.25 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC= 100mA, IB= 10 mA
VCE= 10 V, IC= 1mA
F=30MHz
80
1V
MHz
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
Y
120-240
GR
200-400
BL
350-700




 KTC3198




 KTC3198
TO-92 PACKAGE OUTLINE DIMENSIONS
D
b
D1
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Dimensions In Millimeters
Min Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.400
4.700
3.430
4.300
4.700
1.270TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.173
0.185
0.135
0.169
0.185
0.050TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015




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