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NPN Transistor. 2SC5809 Datasheet

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NPN Transistor. 2SC5809 Datasheet






2SC5809 Transistor. Datasheet pdf. Equivalent




2SC5809 Transistor. Datasheet pdf. Equivalent





Part

2SC5809

Description

Silicon NPN Transistor



Feature


Power Transistors 2SC5809 Silicon NPN t riple diffusion planar type Unit: mm F or high breakdown voltage high-speed sw itching ■ Features • High-speed swi tching (Fall time tf is short) • High collector-base voltage (Emitter open) VCBO • Low collector-emitter saturati on voltage VCE(sat) • TO-220D built-i n: Excellent package with withstand vol tage 5 kV guaranteed 9.9±0..
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SC5809 Datasheet


Panasonic Semiconductor 2SC5809

2SC5809; 3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2 ±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6 0.1 0.55±0.15 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector- base voltage (Emitter open) Collector-e mitter voltage (Base open) Emitter-base voltage (Collector open) Collector cur rent Peak collector current Collector p ower dissipation Junction temperat.


Panasonic Semiconductor 2SC5809

ure Storage temperature TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 800 500 8 3 6 30 2 150 55 to +150 °C °C Unit V V V A A W 2 .54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Marking Symbol: C5809 Internal Connec tion C B E ■ Electrical Characterist ics TC = 25°C ± 3°C Parameter Collec tor-emitter voltage (Base open).


Panasonic Semiconductor 2SC5809

Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Coll ector open) Forward current transfer ra tio Symbol VCEO ICBO IEBO hFE1 hFE2 Col lector-emitter saturation voltage Trans ition frequency Turn-on time Storage ti me Fall time VCE(sat) fT ton tstg tf Co nditions IC = 10 mA, IB = 0 VCB = 800 V , IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, I C = 0.1 A VCE = 5 .

Part

2SC5809

Description

Silicon NPN Transistor



Feature


Power Transistors 2SC5809 Silicon NPN t riple diffusion planar type Unit: mm F or high breakdown voltage high-speed sw itching ■ Features • High-speed swi tching (Fall time tf is short) • High collector-base voltage (Emitter open) VCBO • Low collector-emitter saturati on voltage VCE(sat) • TO-220D built-i n: Excellent package with withstand vol tage 5 kV guaranteed 9.9±0..
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SC5809 Datasheet




 2SC5809
Power Transistors
2SC5809
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
Features
High-speed switching (Fall time tf is short)
High collector-base voltage (Emitter open) VCBO
Low collector-emitter saturation voltage VCE(sat)
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
φ 3.2±0.1
1.4±0.2
1.6±0.2
2.6±0.1
0.8±0.1
0.55±0.15
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
800
500
8
3
6
30
2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: C5809
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 800 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 3 A
IC = 3 A, IB = 0.6 A
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 3.0 A, Resistance loaded
IB1 = 0.6 A, IB2 = − 0.6 A
VCC = 200 V
500 V
100 µA
100 µA
15
8
0.3 0.6
V
8 MHz
1.1 µs
2.0 µs
0.3 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJD00291AED
1




 2SC5809
2SC5809
35
(1)
30
25
PC Ta
(1) TC = Ta
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
20
15
(2)
10
5
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe operation area
100
Non repetitive pulse
TC = 25°C
10 ICP
IC
1
t=1s
t = 1 ms
t = 10 ms
0.1
0.01
1
10 100 1 000
Collector-emitter voltage VCE (V)
Rth t
1 000 Ta = 25°C
100
(1)
10 (2)
1
0.1
0.001
0.01
(1) Without heat sink
(2) With a Al heat sink 10 × 10 × 2 mm
0.1 1 10 100 1 000
Time t (s)
2 SJD00291AED




 2SC5809
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL



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