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10J303 Datasheet, Equivalent, GT10J303.

GT10J303

GT10J303

 

 

 

Part 10J303
Description GT10J303
Feature www.
DataSheet.
co.
kr GT10J303 TOSHIBA IN SULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SW ITCHING APPLICATIONS MOTOR CONTROL APPL ICATIONS z Third-generation IGBT z Enha ncement mode type z High speed z Low sa turation voltage : tf = 0.
30μs (Max.
) (IC = 10A) : VCE (sat) = 2.
7V (Max.
) (I C = 10A) Unit: mm z FRD included betwe en emitter and collector ABSOLUTE MAXI MUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate-Emitt er Voltage Collector Current Emitter− Collector Forward Current Collector Pow er Dissipation (Tc = 25°C) Junction Te mperature Storage Tem .
Manufacture Toshiba
Datasheet
Download 10J303 Datasheet
Part 10J303
Description GT10J303
Feature www.
DataSheet.
co.
kr GT10J303 TOSHIBA IN SULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SW ITCHING APPLICATIONS MOTOR CONTROL APPL ICATIONS z Third-generation IGBT z Enha ncement mode type z High speed z Low sa turation voltage : tf = 0.
30μs (Max.
) (IC = 10A) : VCE (sat) = 2.
7V (Max.
) (I C = 10A) Unit: mm z FRD included betwe en emitter and collector ABSOLUTE MAXI MUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate-Emitt er Voltage Collector Current Emitter− Collector Forward Current Collector Pow er Dissipation (Tc = 25°C) Junction Te mperature Storage Tem .
Manufacture Toshiba
Datasheet
Download 10J303 Datasheet

10J303

10J303
10J303

10J303

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