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Digital Transistors. EMS1 Datasheet

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Digital Transistors. EMS1 Datasheet






EMS1 Transistors. Datasheet pdf. Equivalent




EMS1 Transistors. Datasheet pdf. Equivalent





Part

EMS1

Description

Emitter Common Dual Digital Transistors



Feature


EMS1 / UMS1N / FMS1A Transistors Emitte r common (dual digital transistors) EMS 1 / UMS1N / FMS1A zFeatures 1) Two 2SA1 037AK chips in a EMT or UMT or SMT pack age. 2) Mounting cost and area can be c ut in half. zExternal dimensions (Units : mm) EMS1 0.22 (4) (3) (2) (5) 0.13 1.2 1.6 (1) zStructure Epitaxial pla nar type PNP silicon transistor Each l ead has same dimen.
Manufacture

Rohm

Datasheet
Download EMS1 Datasheet


Rohm EMS1

EMS1; sions ROHM : EMT5 Abbreviated symbol : S1 UMS1N 0.65 0.65 The following char acteristics apply to both Tr1 and Tr2. 0.2 (4) (3) 0.5 1.3 1.1 2.9 0.9 (5) 0.5 0.5 1.0 1.6 0.8 0.95 0.95 1.9 0.7 2.0 1.25 0.15 zEquivalent circuit EM S1 / UMS1N (3) Tr2 (4) (5) (2) (1) Tr1 Tr2 (2) 2.1 FMS1A (3) (4) (5) R1 Tr1 (1) 0.1Min. 0to0.1 Each lead has sam e dimensions ROHM.


Rohm EMS1

: UMT5 EIAJ : SC-88A Abbreviated symbol : S1 FMS1A 0.3 (2) (3) zAbsolute max imum ratings (Ta = 25°C) Collector-bas e voltage Collector-emitter voltage Emi tter-base voltage Collector current Col lector EMS1, UMS1N power dissipation FM S1A Junction temperature Storage temper ature VCBO VCEO VEBO IC PC Tj Tstg −6 0 −50 −6 150 150 (TOTAL) 300 (TOTAL ) 150 −55∼+150 ˚C ˚C 0.15.


Rohm EMS1

(1) 1.6 Parameter Symbol Limits U nit V V V mA mW 2.8 (5) (4) (1) (2 ) 0.3to0.6 Each lead has same dimensi ons ROHM : SMT5 EIAJ : SC-74A ∗1 2 Abbreviated symbol : S1 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded . w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com 0to0.1 EMS 1 / UMS1N / FMS1A Transist.

Part

EMS1

Description

Emitter Common Dual Digital Transistors



Feature


EMS1 / UMS1N / FMS1A Transistors Emitte r common (dual digital transistors) EMS 1 / UMS1N / FMS1A zFeatures 1) Two 2SA1 037AK chips in a EMT or UMT or SMT pack age. 2) Mounting cost and area can be c ut in half. zExternal dimensions (Units : mm) EMS1 0.22 (4) (3) (2) (5) 0.13 1.2 1.6 (1) zStructure Epitaxial pla nar type PNP silicon transistor Each l ead has same dimen.
Manufacture

Rohm

Datasheet
Download EMS1 Datasheet




 EMS1
Transistors
EMS1 / UMS1N / FMS1A
Emitter common (dual digital transistors)
EMS1 / UMS1N / FMS1A
zFeatures
1) Two 2SA1037AK chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
PNP silicon transistor
The following characteristics apply to both Tr1 and Tr2.
zEquivalent circuit
EMS1 / UMS1N
(3) (2) (1)
Tr2 Tr1
(4) (5)
FMS1A
(3) (4)
Tr2
(5)
R1
Tr1
(2) (1)
zExternal dimensions (Units : mm)
EMS1
(4) (3)
(2)
(5) (1)
1.2
1.6
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : S1
UMS1N
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : S1
FMS1A
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
6
Collector current
IC 150
Collector EMS1, UMS1N
150 (TOTAL)
power
PC
dissipation FMS1A
300 (TOTAL)
Junction temperature
Tj 150
Storage temperature
Tstg
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
55∼+150
Unit
V
V
V
mA
1
mW
2
˚C
˚C
www.datasheet4u.com
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : S1




 EMS1
Transistors
EMS1 / UMS1N / FMS1A
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6 − − V IE=50µA
Collector cutoff current
ICBO − − −0.1 µA VCB=60V
Emitter cutoff current
IEBO − − −0.1 µA VEB=5V
Collector-emitter saturation voltage VCE (sat) − − −0.5 V IC/IB=50mA/5mA
DC current transfer ratio
hFE 120 560 VCE=6V, IC=1mA
Transition frequency
fT 140 MHz VCE=12V, IE=2mA, f=100MHz
Output capacitance
Cob 3 4.5 PF VCB=12V, IE=0A, f=1MHz
zPackaging specifications
Package
Code
Type
EMS1
UMS1N
FMS1A
Basic ordering
unit (pieces)
T2R
8000
Taping
TR
T148
3000
3000
zElectrical characteristic curves
50
Ta=100˚C
20 25˚C
40˚C
10
5
VCE=6V
2
1
0.5
0.2
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
10
Ta=25˚C
35.0
31.5
8 28.0
24.5
6 21.0
17.5
4 14.0
10.5
2 7.0
3.5µA
IB=0
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( I )
100
Ta=25˚C
500
80 450
400
350
300
60
250
200
40 150
100
20
50µA
IB=0
0 1 2 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( II )




 EMS1
Transistors
500
Ta=25˚C
200
VCE= 5V
3V
1V
100
50
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector
current ( I )
EMS1 / UMS1N / FMS1A
500
Ta=100˚C
25˚C
200 40˚C
100
50
0.2 0.5 1 2
VCE=6V
5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector
current ( II )
1
Ta=25˚C
0.5
0.2
0.1
0.05
IC/IB=50
20
10
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( I )
1 1000
lC/lB=10
Ta=25˚C
VCE=12V
0.5 500
0.2
0.1
0.05
Ta=100˚C
25˚C
40˚C
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( II )
200
100
50
0.5 1 2
5 10 20
50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
20
Cib
10
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cob
5
2
0.5 1 2
5 10 20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage



Recommended third-party EMS1 Datasheet






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