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Rectifier Driver. IR1175 Datasheet

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Rectifier Driver. IR1175 Datasheet






IR1175 Driver. Datasheet pdf. Equivalent




IR1175 Driver. Datasheet pdf. Equivalent





Part

IR1175

Description

Synchronous Rectifier Driver



Feature


ADVANCE INFORMATION Data Sheet PD 60178 A IR1175 Synchronous Rectifier Driver Features n Provides constant and proper gate drive to power MOSFETs regardless of transformer output n Minimizes loss due to power MOSFET body drain diode c onduction n Stand alone operation - no ties to primary side n Schmitt trigger input with double pulse suppression all ows operation in n.
Manufacture

International Rectifier

Datasheet
Download IR1175 Datasheet


International Rectifier IR1175

IR1175; oisy environments n High current drive c apability - 2A n High speed operation - 2MHz n Adaptable to multiple topologie s (such as singleended forward, double- ended forward) Product Summary Vdd IO+ /Fmax Max lead time 5Vdc 2A/2A 2MHz 500 nsec Description The IR1175 is a high speed CMOS controller designed to drive N-channel power MOSFETs used as synchr onous rectifiers i.


International Rectifier IR1175

n high current, high frequency forward c onverters with output voltages equal or below 5VDC. Schmitt trigger inputs wit h double pulse suppression allow the co ntroller to operate in noisy environmen ts. The circuit does not require any ti es to the primary side and derives its operating power directly from the secon dary. The circuit functions by anticipa ting transformer o.


International Rectifier IR1175

utput transitions, then turns the power MOSFETs on or off before the transition s of the transformer to minimize body d rain diode conduction and reduce associ ated losses. Turn on/off lead time can be adjusted to accommodate a variety of power MOSFET sizes and circuit conditi ons. The IR1175 also provides gate driv e overlap/dead-time control via externa l components to fu.

Part

IR1175

Description

Synchronous Rectifier Driver



Feature


ADVANCE INFORMATION Data Sheet PD 60178 A IR1175 Synchronous Rectifier Driver Features n Provides constant and proper gate drive to power MOSFETs regardless of transformer output n Minimizes loss due to power MOSFET body drain diode c onduction n Stand alone operation - no ties to primary side n Schmitt trigger input with double pulse suppression all ows operation in n.
Manufacture

International Rectifier

Datasheet
Download IR1175 Datasheet




 IR1175
ADVANCE INFORMATION
Data Sheet PD 60178A
IR1175
Synchronous Rectifier Driver
Features
n Provides constant and proper gate drive to power
MOSFETs regardless of transformer output
n Minimizes loss due to power MOSFET body
drain diode conduction
n Stand alone operation - no ties to primary side
n Schmitt trigger input with double pulse suppress-
ion allows operation in noisy environments
n High current drive capability - 2A
n High speed operation - 2MHz
n Adaptable to multiple topologies (such as single-
ended forward, double-ended forward)
Product Summary
Vdd
IO+/-
Fmax
Max lead time
5Vdc
2A/2A
2MHz
500nsec
Description
The IR1175 is a high speed CMOS controller designed
to drive N-channel power MOSFETs used as synchro-
nous rectifiers in high current, high frequency forward
converters with output voltages equal or below 5VDC.
Schmitt trigger inputs with double pulse suppression
allow the controller to operate in noisy environments.
The circuit does not require any ties to the primary
side and derives its operating power directly from
the secondary. The circuit functions by anticipating
transformer output transitions, then turns the power
MOSFETs on or off before the transitions of the trans-
former to minimize body drain diode conduction and
reduce associated losses. Turn on/off lead time can
be adjusted to accommodate a variety of power
MOSFET sizes and circuit conditions. The IR1175 also
provides gate drive overlap/dead-time control via
external components to further minimize diode con-
duction by nulling effects of secondary loop and de-
vice package inductance.
Package
20 Lead Surface Mount (SSOP-20)




 IR1175
IR1175
ADVANCE INFORMATION
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
Symbol
Vdd
Iin
PD
RthJC
RthJA
TJ
TS
TL
Definition
Supply voltage
Input clamp current
Power dissipation (SSOP-20)
Thermal resistance (SSOP-20) junction-to-case
Thermal resistance (SSOP-20) junction-to-ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-55
Max.
7
+/- 10
400
28.5
90.5
150
150
300
Units
VDC
mADC
mW
°C/W
°C/W
°C
°C
°C
Recommended Operating Conditions
Symbol
Vdd
TA
Freq
Rbias
UV
Xin
Cd1/Cd2
Cf
Definition
Supply voltage operating range
Ambient temperature
Operating frequency
Required bias resistor (+/- 1%)
Voltage at UVSET pin
Maximum voltage at X1 and X2 inputs
Capacitance at pins DTIN1 and DTIN2
Loop filter bypass capacitor
Min.
-40
250
1.75
470
Typ.
5
69.8
Max.
85
500
2.25
5.6
22
Units
VDC
°C
KHz
KW
VDC
VDC
pF
KW
2 www.irf.com




 IR1175
ADVANCE INFORMATION
IR1175
Dynamic Electrical Characteristics
Vdd=5V, TA = 25oC, Rbias = 69.8K unless otherwise specified.
Symbol Definition
Vdd
Iqdd
Freq
UVSET+
UVSET-
Vxth+
Vxth-
Tadv
Td
Isink
Isource
tio
tr
tf
Vtr
Rbias
Vbias
Tjitter
Ichgpump
Vchgpump
Kvco_dc
Supply voltage operating range
Vdd quiescent current (Vin=0 or 5V, Iout=0)
Operating frequency
UVSET positive going threshold
UVSET negative going threshold
X1/X2 Input positive going threshold
X1/X2 Input negative going threshold
Externally adjustable lead time (advance)
Externally adjustable dead-time for Q1 and Q2
Q1,Q2 output sink current (Vdd=5.0V,
pulsed, 10 usec)
Q1,Q2 output source current (Vdd=5.0V,
pulsed, 10 usec)
Input to output delay (PLL bypassed, cross coupled
mode)
Gate turn-on rise time (C1=1000pf, Vdd=5V)
Gate turn-off fall time (C1=1000pf, Vdd=5V)
Cross-over voltage (Vdd=5Vdc, DTIN shorted to
DTOUT, C1=1000pf) Fig. 3
Required bias resistor
Voltage at Rbias pin
Phase-lock loop output jitter
Charge pump output current (at VFLTR pin)
Charge pump output voltage (at VFLTR pin)
PLL Vco DC gain
Min.
4.0
100
1.10
0.8
20
68
-20
1.3
Typ.
3
1.4
1.0
20
20
20
2.5
1.25
50
1.5
62
Max.
5.5
5
2000
1.4
1.1
500
2
Units
VDC
mADC
KHz
V
V
VDC
VDC
nsec
nsec
A
2A
— nsec
— nsec
— nsec
— VDC
71 KW
— VDC
20 nsec
mADC
1.7 VDC
— KHz/
www.irf.com
3



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