| DatasheetsPDF.com |
2SC1215 Datasheet, Equivalent, NPN Transistor.Silicon NPN Transistor Silicon NPN Transistor |
| Part | 2SC1215 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF b and) amplification and oscillation
5. 0 ±0. 2 Unit: mm 4. 0±0. 2 5. 1±0. 2 s F eatures q High transition frequency fT . 13. 5±0. 5 / s Absolute Maximum Rati ngs (Ta=25˚C) Parameter Symbol Rati ngs Unit e e) Collector to base volta ge VCBO 30 V c e. d typ Collector t o emitter voltage VCEO 20 V n d stag tinue Emitter to base voltage VEBO 2 . 3±0. 2 3 V le on Collector current IC 50 mA a elifecyc , disc Collecto r power dissipation PC 400 mW n u ct ped Junction temperature Tj 150 ˚C rodu d ty Storage t . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
| Part | 2SC1215 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF b and) amplification and oscillation
5. 0 ±0. 2 Unit: mm 4. 0±0. 2 5. 1±0. 2 s F eatures q High transition frequency fT . 13. 5±0. 5 / s Absolute Maximum Rati ngs (Ta=25˚C) Parameter Symbol Rati ngs Unit e e) Collector to base volta ge VCBO 30 V c e. d typ Collector t o emitter voltage VCEO 20 V n d stag tinue Emitter to base voltage VEBO 2 . 3±0. 2 3 V le on Collector current IC 50 mA a elifecyc , disc Collecto r power dissipation PC 400 mW n u ct ped Junction temperature Tj 150 ˚C rodu d ty Storage t . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |