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C30659-900-1060-1550NM Datasheet, Equivalent, Preamplifier Modules.Silicon and InGaAs APD Preamplifier Modules Silicon and InGaAs APD Preamplifier Modules |
Part | C30659-900-1060-1550NM |
---|---|
Description | Silicon and InGaAs APD Preamplifier Modules |
Feature | P R E L I M I N A R Y
U 4 t e C30659-90 0-1060-1550nm Series e h Silicon and In GaAs APD Preamplifier Modules S a at Ap plications . D Range Finding w Confocal Microscope w w LIDAR Featur es . c Prel iminary Data Sheet om Optoelectronics D A T A S H E E T Description Perkin Elmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a h ybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C309 54E, C30956E, C30645E and C30662E that provide very good response between 830 and 1550 nanom . |
Manufacture | Perkin Elmer Optoelectronics |
Datasheet |
Part | C30659-900-1060-1550NM |
---|---|
Description | Silicon and InGaAs APD Preamplifier Modules |
Feature | P R E L I M I N A R Y
U 4 t e C30659-90 0-1060-1550nm Series e h Silicon and In GaAs APD Preamplifier Modules S a at Ap plications . D Range Finding w Confocal Microscope w w LIDAR Featur es . c Prel iminary Data Sheet om Optoelectronics D A T A S H E E T Description Perkin Elmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a h ybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C309 54E, C30956E, C30645E and C30662E that provide very good response between 830 and 1550 nanom . |
Manufacture | Perkin Elmer Optoelectronics |
Datasheet |
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