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D40C1 Datasheet, Equivalent, Power Transistor.NPN Silicon Darlington Power Transistor NPN Silicon Darlington Power Transistor |
| Part | D40C1 |
|---|---|
| Description | NPN Silicon Darlington Power Transistor |
| Feature | D40C1
NPN SILICON DARLINGTON POWER
TRANS ISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDU CTOR D40C1 type is an NPN silicon Darli ngton power transistor designed for gen eral purpose amplifier applications whe re high gain is required. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATI NGS: (TC=25°C) Collector-Emitter Volta ge Collector-Emitter Voltage Emitter-Ba se Voltage Continuous Collector Current Peak Collector Current Power Dissipati on Operating and Storage Junction Tempe rature Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC 30 3 0 13 0. 5 1. 0 6. 2 . |
| Manufacture | Central Semiconductor |
| Datasheet |
| Part | D40C1 |
|---|---|
| Description | NPN Silicon Darlington Power Transistor |
| Feature | D40C1
NPN SILICON DARLINGTON POWER
TRANS ISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDU CTOR D40C1 type is an NPN silicon Darli ngton power transistor designed for gen eral purpose amplifier applications whe re high gain is required. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATI NGS: (TC=25°C) Collector-Emitter Volta ge Collector-Emitter Voltage Emitter-Ba se Voltage Continuous Collector Current Peak Collector Current Power Dissipati on Operating and Storage Junction Tempe rature Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC 30 3 0 13 0. 5 1. 0 6. 2 . |
| Manufacture | Central Semiconductor |
| Datasheet |
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