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2SJ621 Datasheet, Equivalent, EFFECT TRANSISTOR.

MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR

 

 

 

Part 2SJ621
Description MOS FIELD EFFECT TRANSISTOR
Feature www.
DataSheet4U.
com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHI NG DESCRIPTION The 2SJ621 is a switchi ng device which can be driven directly by a 1.
8 V power source.
This device fe atures a low on-state resistance and ex cellent switching characteristics, and is suitable for applications such as po wer switch of portable machine and so o n.
2.
8 ±0.
2 PACKAGE DRAWING (Unit: mm ) 0.
4 +0.
1 –0.
05 0.
65–0.
15 +0.
1 0.
16+0.
1 –0.
06 3 FEATURES
• 1.
8 V d rive available
• Low on-state resista nce RDS(on)1 = 44 mΩ MAX.
(VGS = –4 .
5 V, ID = –2.
0 A) RDS(on)2 = .
Manufacture NEC
Datasheet
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Part 2SJ621
Description MOS FIELD EFFECT TRANSISTOR
Feature www.
DataSheet4U.
com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHI NG DESCRIPTION The 2SJ621 is a switchi ng device which can be driven directly by a 1.
8 V power source.
This device fe atures a low on-state resistance and ex cellent switching characteristics, and is suitable for applications such as po wer switch of portable machine and so o n.
2.
8 ±0.
2 PACKAGE DRAWING (Unit: mm ) 0.
4 +0.
1 –0.
05 0.
65–0.
15 +0.
1 0.
16+0.
1 –0.
06 3 FEATURES
• 1.
8 V d rive available
• Low on-state resista nce RDS(on)1 = 44 mΩ MAX.
(VGS = –4 .
5 V, ID = –2.
0 A) RDS(on)2 = .
Manufacture NEC
Datasheet
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