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A1160 Datasheet, Equivalent, 2SA1160.

2SA1160

2SA1160

 

 

 

Part A1160
Description 2SA1160
Feature TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flas h Applications Medium Power Amplifier A pplications 2SA1160 Unit: mm
• High DC current gain and excellent hFE line arity : hFE (1) = 140 to 600 (VCE = − 1 V, IC = −0.
5 A) : hFE (2) = 60 (min ), 120 (typ.
) (VCE = −1 V, IC = −4 A)
• Low saturation voltage : VCE (sa t) = −0.
5 V (max) (IC = −2 A, IB = −50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rat ing Unit Collector-base voltage Coll ector-emitter voltage Emitter-base vol tage Collector current DC Pulsed (Not e 1) Base current Collector pow .
Manufacture Toshiba Semiconductor
Datasheet
Download A1160 Datasheet
Part A1160
Description 2SA1160
Feature TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flas h Applications Medium Power Amplifier A pplications 2SA1160 Unit: mm
• High DC current gain and excellent hFE line arity : hFE (1) = 140 to 600 (VCE = − 1 V, IC = −0.
5 A) : hFE (2) = 60 (min ), 120 (typ.
) (VCE = −1 V, IC = −4 A)
• Low saturation voltage : VCE (sa t) = −0.
5 V (max) (IC = −2 A, IB = −50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rat ing Unit Collector-base voltage Coll ector-emitter voltage Emitter-base vol tage Collector current DC Pulsed (Not e 1) Base current Collector pow .
Manufacture Toshiba Semiconductor
Datasheet
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A1160

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