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20J321 Datasheet, Equivalent, GT20J321.

GT20J321

GT20J321

 

 

 

Part 20J321
Description GT20J321
Feature www.
DataSheet4U.
com GT20J321 TOSHIBA In sulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power S witching Applications Fast Switching Ap plications


• The 4th generati on Enhancement-mode Fast switching (FS) : Operating frequency up to 50 kHz (ref erence) Low switching loss

• : Eo n = 0.
40 mJ (typ.
) : Eoff = 0.
43 mJ (ty p.
) Low saturation voltage: VCE (sat) = 2.
0 V (typ.
) FRD included between emit ter and collector Unit: mm www.
DataShe et4U.
com High speed: tf = 0.
04 µs (typ .
) Maximum Ratings (Ta = 25°C) Charac teristics Collector-emitter voltage Gat e-emitter voltage Collecto .
Manufacture TOSHIBA
Datasheet
Download 20J321 Datasheet
Part 20J321
Description GT20J321
Feature www.
DataSheet4U.
com GT20J321 TOSHIBA In sulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power S witching Applications Fast Switching Ap plications


• The 4th generati on Enhancement-mode Fast switching (FS) : Operating frequency up to 50 kHz (ref erence) Low switching loss

• : Eo n = 0.
40 mJ (typ.
) : Eoff = 0.
43 mJ (ty p.
) Low saturation voltage: VCE (sat) = 2.
0 V (typ.
) FRD included between emit ter and collector Unit: mm www.
DataShe et4U.
com High speed: tf = 0.
04 µs (typ .
) Maximum Ratings (Ta = 25°C) Charac teristics Collector-emitter voltage Gat e-emitter voltage Collecto .
Manufacture TOSHIBA
Datasheet
Download 20J321 Datasheet

20J321

20J321
20J321

20J321

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