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NPN Transistor. 2SC3710A Datasheet

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NPN Transistor. 2SC3710A Datasheet






2SC3710A Transistor. Datasheet pdf. Equivalent




2SC3710A Transistor. Datasheet pdf. Equivalent





Part

2SC3710A

Description

Silicon NPN Transistor



Feature


www.DataSheet4U.com 2SC3710A TOSHIBA Tr ansistor Silicon NPN Epitaxial Type (PC T Process) 2SC3710A High-Current Switc hing Applications Unit: mm • • • Low collector saturation voltage: VCE ( sat) = 0.4 V (max) High-speed switching : tstg = 1.0 µs (typ.) Complementary t o 2SA1452A Maximum Ratings (Tc = 25°C ) Characteristics Collector-base voltag e Collector-emitter voltag.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SC3710A Datasheet


Toshiba Semiconductor 2SC3710A

2SC3710A; e Emitter-base voltage Collector current Base current Collector power dissipati on (Tc = 25°C) Junction temperature St orage temperature range Symbol VCBO VCE O VEBO IC IB PC Tj Tstg Rating 80 80 6 12 2 30 150 Unit V V V A A W JEDEC °C °C ― ― 2-10R1A DataSheet4U.com −55 to 150 JEITA TOSHIBA DataShee Electrical Characteristics (Tc = 25°C ) Characteristics Collector .


Toshiba Semiconductor 2SC3710A

cut-off current Emitter cut-off current Collector-emitter breakdown voltage Sym bol ICBO IEBO V (BR) CEO hFE (1) DC cur rent gain (Note) hFE (2) Collector-emit ter saturation voltage Base-emitter sat uration voltage Transition frequency Co llector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 µs IB1 Switching time Storage time tstg In put IB2 Test Condit.


Toshiba Semiconductor 2SC3710A

ion VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 6 A IC = 6 A, IB = 0.3 A IC = 6 A, IB = 0.3 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Wei ght: 1.7 g (typ.) Min ― ― 80 70 40 ― ― ― ― Output 5Ω ― Typ. ― ― ― ― 0.2 0.9 80 220 0.2 Ma x 10 10 ― 240 ― 0.4 1.2 ― ― ― V V MHz pF Unit µA µA V IB1 IB2 ― 1.0 ― µs VCC .

Part

2SC3710A

Description

Silicon NPN Transistor



Feature


www.DataSheet4U.com 2SC3710A TOSHIBA Tr ansistor Silicon NPN Epitaxial Type (PC T Process) 2SC3710A High-Current Switc hing Applications Unit: mm • • • Low collector saturation voltage: VCE ( sat) = 0.4 V (max) High-speed switching : tstg = 1.0 µs (typ.) Complementary t o 2SA1452A Maximum Ratings (Tc = 25°C ) Characteristics Collector-base voltag e Collector-emitter voltag.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SC3710A Datasheet




 2SC3710A
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
2SC3710A
High-Power Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max)
High-speed switching: tstg = 1.0 μs (typ.)
Complementary to 2SA1452A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 6 V
Collector current
IC 12 A
Base current
IB 2 A
Collector power dissipation
(Tc = 25°C)
PC 30 W
JEDEC
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-12-21




 2SC3710A
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 80 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 1 V, IC = 6 A
IC = 6 A, IB = 0.3 A
VBE (sat) IC = 6 A, IB = 0.3 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
20 μs Input IB1
Output
Switching time Storage time
Fall time
tstg IB2
VCC 30 V
tf IB1 = 0.3 A,IB2 = 0.3 A,
duty cycle 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
2SC3710A
Min Typ. Max Unit
― ― 10 μA
― ― 10 μA
80 ― ―
V
70 240
40 ― ―
0.2 0.4
V
0.9 1.2
V
80 MHz
220
pF
0.2
1 ― μs
0.2
C3710A
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
NOTE 2:
Note 2 : A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2010-12-21




 2SC3710A
IC – VCE
100 80 70 60
10
50
8 40
Common
emitter
Tc = 25°C
30
6
20
4
2 IB = 10 mA
0
0
0 2 4 6 8 10 12 14
Collector-emitter voltage VCE (V)
VCE – IC
1.0
IB = 20 mA
0.8
Common emitter
Tc = 55°C
40 60 80 100
150 200
0.6
0.4 300
600
0.2
0
0 2 4 6 8 10 12
Collector current IC (A)
2SC3710A
1.0
0.8 IB = 20 mA
40
VCE – IC
Common emitter
Tc = 25°C
60 80 100 150 200
0.6
300
0.4 400
600
0.2
0
0 2 4 6 8 10 12
Collector current IC (A)
VCE – IC
1.0
Common emitter
Tc = 100°C
0.8
IB = 50 mA
100 150 200
0.6 300
400
0.4
700
0.2
0
0 2 4 6 8 10 12
Collector current IC (A)
hFE – IC
500
Common emitter
300 VCE = 1 V
Tc = 100°C
100 25
55
50
30
10
0.1 0.3 1 3 10 20
Collector current IC (A)
VCE (sat) – IC
1
Common emitter
IC/IB = 20
0.5
0.3
0.1
0.05
Tc = 55°C
25
100
0.02
0.1
0.3 1 3 10 20
Collector current IC (A)
3 2010-12-21






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