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2SK2101. K2101 Datasheet

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2SK2101. K2101 Datasheet
















K2101 2SK2101. Datasheet pdf. Equivalent













Part

K2101

Description

2SK2101



Feature


www.DataSheet4U.com 2SK2101-01MR FAP-II A Series N-channel MOS-FET 800V 2,1 6A 50W > Features High Speed Switc hing Low On-Resistance No Secondary Bre akdown Low Driving Power High Voltage V GS = ± 30V Guarantee Avalanche Proof > Outline Drawing > Applications Switc hing Regulators UPS DC-DC converters Ge neral Purpose Power Amplifier > Maximu m Ratings and Charact.
Manufacture

Fuji Electric

Datasheet
Download K2101 Datasheet


Fuji Electric K2101

K2101; eristics - Absolute Maximum Ratings (TC= 25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltag e(RGS=20KΩ) Continous Drain Current P ulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and S torage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rat ing 800 800 6 24 ±30 50 150 -55 ~ +150 Unit V V A A V W °C °.


Fuji Electric K2101

C > Equivalent Circuit - Electrical Ch aracteristics (TC=25°C), unless otherw ise specified Item Drain-Source Breakdo wn-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Inp ut Capacitance Output Capacitance Rever se Transfer Capacitance Turn-On-Time to n (ton=td(on)+tr) T.


Fuji Electric K2101

urn-Off-Time toff (ton=td(off)+tf) Avala nche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current D iode Forward On-Voltage Reverse Recover y Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V T.





Part

K2101

Description

2SK2101



Feature


www.DataSheet4U.com 2SK2101-01MR FAP-II A Series N-channel MOS-FET 800V 2,1 6A 50W > Features High Speed Switc hing Low On-Resistance No Secondary Bre akdown Low Driving Power High Voltage V GS = ± 30V Guarantee Avalanche Proof > Outline Drawing > Applications Switc hing Regulators UPS DC-DC converters Ge neral Purpose Power Amplifier > Maximu m Ratings and Charact.
Manufacture

Fuji Electric

Datasheet
Download K2101 Datasheet




 K2101
www.DataSheet4U.com
2SK2101-01MR
FAP-IIA Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
800V 2,1Ω 6A 50W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Drain-Gate-Voltage(RGS=20K)
Continous Drain Current
V DS
V DGR
ID
800
800
6
Pulsed Drain Current
I D(puls)
24
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
P D 50
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=800V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=3A
VGS=10V
Forward Transconductance
g fs ID=3A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=600V
t r ID=5A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=10
Avalanche Capability
I AV
L=100µH
Tch=25°C
Continous Reverse Drain Current
I DR
TC=25°C
Pulsed Reverse Drain Current
I DRM
TC=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
800
2,5
3
6
Typ. Max.
3,0
10
0,2
10
1,7
6,5
1200
120
40
25
25
85
45
3,5
500
1,0
100
2,1
1800
180
60
40
40
130
70
6
24
1,1 1,6
400
1,5
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
2,5 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56




 K2101
wwNw-.DcahtaaSnheneet4lUM.coOm S-FET
800V 2,1Ω 6A 50W
> Characteristics
Typical Output Characteristics
2SK2101-01MR
FAP-IIA Series
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
1
2
3
VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
Tch [°C]
Typical Forward Transconductance vs. ID
VGS [V]
Gate Threshold Voltage vs. Tch
4
5
6
ID [A]
Typical Capacitance vs. VDS
ID [A]
Typical Input Charge
Tch [°C]
Forward Characteristics of Reverse Diode
7
8
↑↑
9
VDS [V]
Allowable Power Dissipation vs. TC
10
Qg [nC]
Safe operation area
12
VSD [V]
Transient Thermal impedance
11
Tc [°C]
VDS [V]
This specification is subject to change without notice!
t [s]








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