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MOS FET. K3306 Datasheet

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MOS FET. K3306 Datasheet
















K3306 FET. Datasheet pdf. Equivalent













Part

K3306

Description

SWITCHING N-CHANNEL POWER MOS FET



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK33 06 PACKAGE Isolated TO-220 (MP-45F) DE SCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate ch arge and excellent switching characteri stics, and designed for high voltage ap plications such as.
Manufacture

NEC

Datasheet
Download K3306 Datasheet


NEC K3306

K3306; switching power supply, AC adapter. FE ATURES • Low gate charge : 5 QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Avalanche capability ratings • I solated TO-220(MP-45F) package (Isolat ed TO-220) ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Volta.


NEC K3306

ge (VGS = 0 V) Gate to Source Voltage (V DS = 0 V) Drain Current (DC) Drain Curr ent (pulse) Note1 VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg 500 ±30 ±5 ±20 35 2.0 150 –55 to +150 5.0 125 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Di ssipation (TA = 25°C) Channel Temperat ure Storage Temperature Single Avalanch e Current Single Avalanche .


NEC K3306

Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Star ting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The informati on in this document is subject to chang e without notice. Before using this doc ument, please confirm that this is the latest version. Not all devices/types available in every country. Please chec k with local NEC representat.





Part

K3306

Description

SWITCHING N-CHANNEL POWER MOS FET



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK33 06 PACKAGE Isolated TO-220 (MP-45F) DE SCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate ch arge and excellent switching characteri stics, and designed for high voltage ap plications such as.
Manufacture

NEC

Datasheet
Download K3306 Datasheet




 K3306
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3306
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3306 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3306
Isolated TO-220 (MP-45F)
FEATURES
Low gate charge :
5 QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
Gate voltage rating : ±30 V
Low on-state resistance :
RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A)
Avalanche capability ratings
Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
500
±30
±5
±20
35
2.0
150
–55 to +150
5.0
125
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14004EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999




 K3306
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2SK3306
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Drain Leakage Current
5 Gate to Source Leakage Current
IDSS
IGSS
100
±100
µA VDS = 500 V, VGS = 0 V
nA VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
5 Forward Transfer Admittance
5 Drain to Source On-state Resistance
5 Input Capacitance
VGS(off)
| yfs |
RDS(on)
Ciss
2.5 3.5
1.0 3.0
1.35 1.5
700
V VDS = 10 V, ID = 1 mA
S VDS = 10 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
pF VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss 115 pF
Reverse Transfer Capacitance
Crss 6 pF
Turn-on Delay Time
td(on)
16 ns VDD = 150 V, ID = 2.5 A, VGS(on) = 10 V,
Rise Time
tr 3 ns RG = 10 Ω, RL = 60
Turn-off Delay Time
td(off)
33 ns
Fall Time
5 Total Gate Charge
5 Gate to Source Charge
5 Gate to Drain Charge
5 Body Diode Forward Voltage
tf
QG
QGS
QGD
VF(S-D)
5.5 ns
13 nC VDD = 400 V, VGS(on) = 10 V, ID = 5.0 A
4 nC
4.5 nC
1.0 V IF = 5.0 A, VGS = 0 V
Reverse Recovery Time
5 Reverse Recovery Charge
trr 0.7 µs IF = 5.0 A, VGS = 0 V, di/dt = 50 A / µs
Qrr 3.3 µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL VGS
VGS
Wave Form
10 %
0
VGS(on) 90 %
VDD
ID 90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
2 Data Sheet D14004EJ2V0DS00




 K3306
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TYPICAL CHARACTERISTICS(TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
1
0.1
TScin=gIl2eD5(RPD(˚DCauCS)tl(soVne)GLSPi=mow1ite0edrVD)issipat1io0n01Lm0IimDsmi(st1peumdlss1e)00PµWs = 10 µs
1 10 100 1000
VDS - Drain to Source Voltage - V
1000
100
10
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Pulsed
1
0.1
0.01
0.001
0
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
5 10
VGS - Gate to Source Voltage - V
15
2SK3306
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10 10 V
8
VGS = 20 V
8.0 V
6
4 VGS = 6.0 V
2
0 4 8 12 16
VDS - Drain to Source Voltage - V
Data Sheet D14004EJ2V0DS00
3




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