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N-Channel IGBT. HGTG27N60C3R Datasheet

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N-Channel IGBT. HGTG27N60C3R Datasheet
















HGTG27N60C3R IGBT. Datasheet pdf. Equivalent













Part

HGTG27N60C3R

Description

N-Channel IGBT



Feature


www.DataSheet4U.com T UCT ROD RODUC P E P T E E OL UT OBS UBSTIT 0B3 S N E 0 6 Data TG3 Sheet SIBL HG POS TM HGTG27N6 0C3R June 2000 File Number 4245.2 54A, 600V, Rugged UFS Series N-Channel IGBT [ /Title (HGT G27N6 0C3R) /Subject (54 A, 600V, Rugged UFS Series NChannel IGB T) /Autho r () /Keywords (Intersil Corp oration, semiconductor, Avalanche Energ y Rated, Switch in.
Manufacture

Intersil

Datasheet
Download HGTG27N60C3R Datasheet


Intersil HGTG27N60C3R

HGTG27N60C3R; g Power Supplies, Power This IGBT was de signed for optimum performance in the d emanding world of motor control operati on as well as other high voltage switch ing applications. This device demonstra tes RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHST AND TIME (SCWT) conditions. The parts h ave ULTRAFAST (UFS) switching speed whi le the on-state co.


Intersil HGTG27N60C3R

nduction losses have been kept at a low level. The electrical specifications i nclude typical Turn-On and Turn-Off dv/ dt ratings. These ratings and the Turn- On ratings include the effect of the di ode, in the test circuit (Figure 16). T he data was obtained with the diode at the same TJ as the IGBT under test. For merly developmental type TA49048. Feat ures • 54A, 600V, TC.


Intersil HGTG27N60C3R

= 25oC • 600V Switching SOA Capabilit y • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 180ns Short Circuit Rating at TJ = 150oC. . . . . . . . . . . . . . . 10µs • Lo w Conduction Loss Packaging JEDEC STYL E TO-247 E C G Ordering Information PA RT NUMBER HGTG27N60C3R PACKAGE TO-247 B RAND 27N60C3R COLLECTOR (FLANGE) ee aS h Dat Shee Data NOTE: When.





Part

HGTG27N60C3R

Description

N-Channel IGBT



Feature


www.DataSheet4U.com T UCT ROD RODUC P E P T E E OL UT OBS UBSTIT 0B3 S N E 0 6 Data TG3 Sheet SIBL HG POS TM HGTG27N6 0C3R June 2000 File Number 4245.2 54A, 600V, Rugged UFS Series N-Channel IGBT [ /Title (HGT G27N6 0C3R) /Subject (54 A, 600V, Rugged UFS Series NChannel IGB T) /Autho r () /Keywords (Intersil Corp oration, semiconductor, Avalanche Energ y Rated, Switch in.
Manufacture

Intersil

Datasheet
Download HGTG27N60C3R Datasheet




 HGTG27N60C3R
www.DataSheet4U.com
POSSTOIMBBLSEOHSLGUDETBaTGStEa3TP0ISTNRhU6OeT0DeEBUt3PCRTODUCT
HGTG27N60C3R
June 2000 File Number 4245.2
[ /Title
(HGT
G27N6
0C3R)
/Sub-
ject
(54A,
600V,
Rug-
ged
UFS
Series
N-
Chan-
nel
IGBT)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
semi-
con-
ductor,
Ava-
lanche
Energy
Rated,
Switch
ing
Power
Sup-
plies,
Power
54A, 600V, Rugged UFS Series N-Channel
IGBT
This IGBT was designed for optimum performance in the
demanding world of motor control operation as well as other
high voltage switching applications. This device
demonstrates RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
The electrical specifications include typical Turn-On and
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings
include the effect of the diode, in the test circuit (Figure 16).
The data was obtained with the diode at the same TJ as the
IGBT under test.
Formerly developmental type TA49048.
Features
• 54A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 180ns
• Short Circuit Rating at TJ = 150oC. . . . . . . . . . . . . . . 10µs
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG27N60C3R
TO-247
27N60C3R
NOTE: When ordering, use the entire part number.
DataSheet4U.com
Symbol
C
COLLECTOR
(FLANGE)
DDaataShee
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
DataSheet4U.com
DataSheet4 U .com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000




 HGTG27N60C3R
www.DataSheet4U.com
HGTG27N60C3R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 12) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG27N60C3R
600
54
27
108
±20
±30
108A at 600V
208
1.67
100
-40 to 150
260
10
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 440V, TJ = 150oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
et4U.comm Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
BVECS
ICESD
VCE(SAT)
DaICta=S1h0emeAt,4VUG.Ec=om0V
VCE = BVCES
TC = 25oC
VCE = BVCES
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250µA, VCE = VGE
Gate to Emitter Leakage Current
Switching SOA (See Figure 12)
IGES
SSOA
VGE = ±20V
TJ = 150oC, RG = 3
VGE = 15V, VCE(PK) = 600V
L = 50µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-Off Voltage dv/dt (Note 3)
Turn-On Voltage dv/dt (Note 3)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
DataSheet4U.com
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
dVCE/dt
dVCE/dt
EON
EOFF
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVES
VGE = 15V
VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 3
L = 1mH
Diode Used in Test Circuit
RURP3060 at 150oC
MIN TYP MAX UNITS
600 - - V DDaataShee
15 - - V
- - 250 µA
- - 3.0 mA
- 1.8 2.2 V
- 2.1 2.5 V
3.5 5.7 7.5
V
-
-
±100
nA
108 - - A
- 9.0 -
V
-
156 203
nC
-
212 277
nC
- 38 - ns
- 30 - ns
-
250 500
ns
-
180 400
ns
- 2 - V/ns
- 7 - V/ns
- 2.3 - mJ
- 2.0 - mJ
2
DataSheet4 U .com




 HGTG27N60C3R
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HGTG27N60C3R
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Thermal Resistance
RθJC
- - 0.6 oC/W
NOTES:
3. dVCE/dt depends on the diode used and the temperature of the diode. dVCE/dt is measured from 90% to 10% of the voltage.
4. Turn-On Energy Loss (EON) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading edge of
the input pulse
at TJ = 150oC.
and ending at the point where the collector voltage equals VCE(ON). This
A different diode or temperature will result in a different EON. For example
value of EON
with diode at
was
TJ =
obtained with
25oC EON is
a RURP3060 diode
about one half the
value at 150oC.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
et4U.comm
200
DUTY CYCLE <0.5%, VCE = 10V
175
TC = -40oC
150
125
TC = 25oC
120
100
80
100
75
50
25
0
6
TC = 150oC
60
40
20
7
8
9
10
11
12
13
14
DataSheet4U.com0
15
0
VGE, GATE TO EMITTER VOLTAGE (V)
VGE = 15V
VGE = 12V
DUTY CYCLE <0.5%, TC = 25oC
PULSE DURATION = 250µs
VGE = 10V
VGE = 7.5V
VGE = 9V
VGE = 8.5V
VGE = 8.0V
12 3 4 5 67 89
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
DDaataShee
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
250
PULSE DURATION = 250µs
225 DUTY CYCLE <0.5%
200 VGE = 15V
TC = -40oC
175
TC = 25oC
150
125 TC = 150oC
100
75
50
25
0
0123456789
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
55
50
45
40
35
30
25
20
15
10
5
0
25
VGE = 15V
50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
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