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2SC5449. C5449 Datasheet

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2SC5449. C5449 Datasheet
















C5449 2SC5449. Datasheet pdf. Equivalent













Part

C5449

Description

2SC5449



Feature


2SC5449 Silicon NPN Triple Diffused Char acter Display Horizntal Deflection Outp ut www.DataSheet4U.com ADE-208-578 B (Z) 3rd. Edition September 1997 Feature s • High breakdown voltage VCBO = 150 0 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz • Isolate d package TO–3PFM Outline TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitt er 2SC5449 Absolute Maximum .
Manufacture

Hitachi Semiconductor

Datasheet
Download C5449 Datasheet


Hitachi Semiconductor C5449

C5449; Ratings (Ta = 25°C) Item Collector to b ase voltage Collector to emitter voltag e Emitter to base voltage Collector cur rent Collector peak current www.DataShe et4U.com Symbol VCBO VCEO VEBO IC ic(p eak) PC Tj Tstg Note1 Ratings 1500 700 6 12 24 50 150 –55 to +150 Unit V V V A A W °C °C Collector power dissi pation Junction temperature Storage tem perature Note: 1. Value.


Hitachi Semiconductor C5449

at Tc = 25°C Electrical Characteristi cs (Ta = 25°C) Item Collector to emitt er breakdown voltage Emitter to base br eakdownvoltage Collector cutoff current DC current transfer ratio DC current t ransfer ratio Collector to emitter satu rationvoltage Base to emitter saturatio nvoltage Fall time Fall time Symbol V(B R)CEO V(BR)EBO ICES hFE1 hFE2 VCE(sat) VBE(sat) tf tf Min 7.


Hitachi Semiconductor C5449

00 6 — 10 3.5 — — — — Typ — — — — — — — 0.2 0.15 Max — 500 30 6.5 5 1.5 0.4 — V V µs µs Unit V V µA Test Conditions IC = 1 0mA, RBE = ∞ IE = 10mA, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 7A IC = 7A, IB = 1.8A IC = 7 A, IB = 1.8A ICP = 6A, IB1 = 2A fH = 31 .5kHz ICP = 6A, IB1 = 1.5A fH = 64kHz 2 2SC5449 Main Characteristics Collector Power Diss.




Part

C5449

Description

2SC5449



Feature


2SC5449 Silicon NPN Triple Diffused Char acter Display Horizntal Deflection Outp ut www.DataSheet4U.com ADE-208-578 B (Z) 3rd. Edition September 1997 Feature s • High breakdown voltage VCBO = 150 0 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz • Isolate d package TO–3PFM Outline TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitt er 2SC5449 Absolute Maximum .
Manufacture

Hitachi Semiconductor

Datasheet
Download C5449 Datasheet




 C5449
2SC5449
Silicon NPN Triple Diffused
Character Display Horizntal Deflection Output
www.DataSheet4U.com
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf = 0.15 µsec (typ.) at fH = 64 kHz
Isolated package
TO–3PFM
Outline
TO–3PFM
ADE-208-578 B (Z)
3rd. Edition
September 1997
1
2
3
1. Base
2. Collector
3. Emitter




 C5449
2SC5449
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
www.DataSheet4U.com Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Symbol
VCBO
VCEO
VEBO
IC
ic(peak)
P Note1
C
Tj
Tstg
Ratings
1500
700
6
12
24
50
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter
breakdown voltage
Emitter to base
breakdownvoltage
Collector cutoff current
DC current transfer ratio
DC current transfer ratio
Collector to emitter
saturationvoltage
Base to emitter
saturationvoltage
Fall time
Symbol
V(BR)CEO
Min
700
V(BR)EBO
6
ICES
hFE1
hFE2
VCE(sat)
10
3.5
VBE(sat)
tf
Fall time
tf
Typ
0.2
0.15
Max
500
30
6.5
5
1.5
0.4
Unit
V
V
µA
V
V
µs
µs
Test Conditions
IC = 10mA, RBE =
IE = 10mA, IC = 0
VCE = 1500V, RBE = 0
VCE = 5 V, IC = 1A
VCE = 5 V, IC = 7A
IC = 7A, IB = 1.8A
IC = 7A, IB = 1.8A
ICP = 6A, IB1 = 2A
fH = 31.5kHz
ICP = 6A, IB1 = 1.5A
fH = 64kHz
2




 C5449
Main Characteristics
www.DataSheet4U.com
Collector Power Dissipation
vs. Temperature
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
2SC5449
Area of Safe Operaion
50
20
10
5
2
1
0.5 L = 180 µH
I B2 = –1 A
0.2 duty < 1 %
Tc = 25°C
0.1
10
100
1000
5000
Collector to Emitter Voltage V CE(V)
Typical Output Characteristics
10
211..0.86AAA
1.4 A
1.2 A
Pc = 50 W
1.0 A
5 0.8 A
0.6 A
0.4 A
0.2 A
Tc = 25 °C
IB=0
0 5 10
Collector to Emitter Voltage V CE(V)
DC Current Transfer Ratio vs.
Collector Current
100
50 75 °C
20
10 25 °C
5 Tc = –25 °C
2
1 VCE = 5 V
0.1 0.2 0.5 1 2 5 10 20
Collector Current I C(A)
3




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