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FDS6986S. 6986S Datasheet

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FDS6986S. 6986S Datasheet
















6986S FDS6986S. Datasheet pdf. Equivalent













Part

6986S

Description

FDS6986S



Feature


FDS6986S September 2002 FDS6986S Dual Notebook Power Supply N-Channel PowerTr ench SyncFET™ General Description The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies th at provide various peripheral voltages for notebook computers and other batter y powered electronic devices. FDS6986S contains two unique 30.
Manufacture

Fairchild Semiconductor

Datasheet
Download 6986S Datasheet


Fairchild Semiconductor 6986S

6986S; V, N-channel, logic level, PowerTrench M OSFETs designed to maximize power conve rsion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to re duce conduction losses. Q2 also include s an integrated Schottky diode using Fa irchild’s monolithic SyncFET technolo gy. Features • Q2: .


Fairchild Semiconductor 6986S

Optimized to minimize conduction losses Includes SyncFET Schottky body diode RD S(on) = 20 mΩ @ VGS = 10V RDS(on) = 2 8 mΩ @ VGS = 4.5V • Q1: Optimized f or low switching losses Low gate charge (6.5 nC typical) RDS(on) = 29 mΩ @ V GS = 10V RDS(on) = 38 mΩ @ VGS = 4.5V 7.9A, 30V 6.5A, 30V 1 /S D2 1 /S D2 D D D 5 6 7 Q2 4 3 D1 D D1 Q 1 2 1 SO-8 G S1 Pin 1 SO-.


Fairchild Semiconductor 6986S

8 S S S G S2 1 2 /D http://www.Data Sheet4U.net/ G 8 2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-S ource Voltage Gate-Source Voltage TA = 25°C unless otherwise noted Paramete r Q2 30 (Note 1a) Q1 30 ±16 6.5 20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation f or Single Operation .




Part

6986S

Description

FDS6986S



Feature


FDS6986S September 2002 FDS6986S Dual Notebook Power Supply N-Channel PowerTr ench SyncFET™ General Description The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies th at provide various peripheral voltages for notebook computers and other batter y powered electronic devices. FDS6986S contains two unique 30.
Manufacture

Fairchild Semiconductor

Datasheet
Download 6986S Datasheet




 6986S
September 2002
FDS6986S
Dual Notebook Power Supply N-Channel PowerTrenchSyncFET
General Description
The FDS6986S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6986S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
7.9A, 30V
RDS(on) = 20 m@ VGS = 10V
RDS(on) = 28 m@ VGS = 4.5V
Q1: Optimized for low switching losses
Low gate charge (6.5 nC typical)
6.5A, 30V
RDS(on) = 29 m@ VGS = 10V
RDS(on) = 38 m@ VGS = 4.5V
D
D
D
D
SO-8
Pin 1 SO-8
G
SS
S
http://www.DataSheet4U.net/
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6986S
FDS6986S
13”
2002 Fairchild Semiconductor Corporation
Q2
5
6
7 Q1
8
4
3
2
1
Q2 Q1
30 30
±20 ±16
7.9 6.5
30 20
2
1.6
1
0.9
-55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
FDS6986S Rev C1(W)
datasheet pdf - http://www.DataSheet4U.net/




 6986S
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = 16 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
VGS = –16 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 10 V, ID = 7.9 A
VGS = 10 V, ID = 7.9 A, TJ = 125°C
VGS = 4.5 V, ID = 7 A
VGS = 10 V, ID = 6.5 A
VGS = 10 V, ID = 6.5 A, TJ = 125°C
VGS = 4.5 V, ID = 5.6 A
VGS = 10 V, VDS = 5 V
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 5 V, ID = 7.9 A
VDS = 5 V, ID = 6.5 A
http://www.DataSheet4U.net/
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 15mV, f = 1.0 MHz
Type Min Typ Max Units
Q2 30
Q1 30
V
Q2 20 mV/°C
Q1 23
Q2 500 µA
Q1 1
Q2 100 NA
Q1
Q2 –100 nA
Q1
Q2 1 2.4
Q1 1 1.6
Q2 –6
3V
3
mV/°C
Q1 –4
Q2 16 20 m
24 32
23 28
Q1 25 29
37 49
30 38
Q2 30
A
Q1 20
Q2 23
Q1 22
S
Q2 1233 pF
Q1 695
Q2 344 pF
Q1 117
Q2 106 pF
Q1 58
Q2 1.4
Q1 1.7
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q2:
VDS = 15 V, ID = 7.9 A, VGS = 5 V
Q1:
VDS = 15 V, ID = 6.5 A, VGS = 5 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
8 16 ns
7 14
5 10 ns
4.5 9
25 40 ns
20 36
11 20 ns
2.5 5
11 16 nC
6.5 9
5 nC
2.5
4 nC
1.3
FDS6986S Rev C1 (W)
datasheet pdf - http://www.DataSheet4U.net/




 6986S
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
tRR
Reverse Recovery Time
IF = 10 A,
QRR Reverse Recovery Charge diF/dt = 300 A/µs
(Note 3)
Q2
VSD Drain-Source Diode Forward VGS = 0 V, IS = 3.5 A
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
Q2
Q1
3.0
1.3
17
12.5
0.5 0.7
0.74 1.2
A
ns
nC
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
http://www.DataSheet4U.net/
FDS6986S Rev C1 (W)
datasheet pdf - http://www.DataSheet4U.net/




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