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Silicon Transistors. 2SA2124 Datasheet

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Silicon Transistors. 2SA2124 Datasheet






2SA2124 Transistors. Datasheet pdf. Equivalent




2SA2124 Transistors. Datasheet pdf. Equivalent





Part

2SA2124

Description

PNP Epitaxial Planar Silicon Transistors



Feature


www.DataSheet4U.com Ordering number : EN N7920 2SA2124 2SA2124 Applications PNP Epitaxial Planar Silicon Transis tors High-Current Switching Applicatio ns Voltage regulators, relay drivers, lamp drivers, electrical equipment. Fe atures • • • • Adoption of MBI T processes. Low collector-to-emitter s aturation voltage. High current capacit y. High-speed switching. Sp.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SA2124 Datasheet


Sanyo Semicon Device 2SA2124

2SA2124; ecifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base V oltage Collector-to-Emitter Voltage Emi tter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperat ure Storage Temperature Symbol VCBO VCE O VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (450mm2!0.8m) Tc=25°C Conditions Ratings -.


Sanyo Semicon Device 2SA2124

30 -30 Unit V V V A A mA W W °C °C Da taSheet4U.com --6 --2 --5 --400 1.3 3. 5 150 --55 to +150 DataShee Electrica l Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutof f Current DC Current Gain Gain-Bandwidt h Product Collector-to-Emitter Saturati on Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE(1) hFE(2) fT VCE(sat) VBE(sat) .


Sanyo Semicon Device 2SA2124

VCB=-30V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC =--100mA VCE=-2V, IC=--1.5A VCE=-10V, I C=--300mA IC=--1.5A, IB=--75mA IC=--1.5 V, IB=-75mA 200 65 440 --0.2 --0.95 --0 .4 --1.2 MHz V V Conditions Ratings min typ max --0.1 --0.1 560 Unit µA µA Marking : AX Continued on next page. Any and all SANYO products described or contained herein do not have specifica tions that can handl.

Part

2SA2124

Description

PNP Epitaxial Planar Silicon Transistors



Feature


www.DataSheet4U.com Ordering number : EN N7920 2SA2124 2SA2124 Applications PNP Epitaxial Planar Silicon Transis tors High-Current Switching Applicatio ns Voltage regulators, relay drivers, lamp drivers, electrical equipment. Fe atures • • • • Adoption of MBI T processes. Low collector-to-emitter s aturation voltage. High current capacit y. High-speed switching. Sp.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SA2124 Datasheet




 2SA2124
www.DataSheet4U.com
Ordering number : ENN7920
2SA2124
2SA2124 PNP Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
High current capacity.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
DataSheet4U.com
Mounted on a ceramic board (450mm2!0.8m)
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Marking : AX
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
fT
VCE(sat)
VBE(sat)
Conditions
VCB=--30V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--100mA
VCE=--2V, IC=--1.5A
VCE=--10V, IC=--300mA
IC=--1.5A, IB=--75mA
IC=--1.5V, IB=--75mA
Ratings
--30
--30
--6
--2
--5
--400
1.3
3.5
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
min
200
65
Ratings
typ
max
--0.1
--0.1
560
Unit
µA
µA
440 MHz
--0.2 --0.4 V
--0.95
--1.2 V
Continued on next page.
DataShee
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DataSheet4U.com
DataSheet4 U .com
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004EA TS IM TB-00000072 No.7920-1/4




 2SA2124
www.DataSheet4U.com
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Turn-On Time
Storage Time
Fall Time
2SA2124
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
ton
tstg
tf
IC=--10µA, IE=0
IC=--1mA, RBE=
IE=--10µA, IC=0
VCB=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--30
--30
--6
Ratings
typ
17
45
200
23
max
Unit
V
V
V
pF
ns
ns
ns
Package Dimensions
unit : mm
2038B
4.5
1.6
1.5
12
0.4
0.5
1.5
3.0
3
0.4
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50+
220µF
VBE=5V
IC= --20IB1=20IB2= --0.5A
IC OUTPUT
RL
+
470µF
VCC= --12V
et4U.com
0.75
1 : Base
2 : Collector
3 : Emitter
DataSheet4U.com
SANYO : PCP
DataShee
IC -- VCE
--2.0
--1.8
--40mA
--25mA --20mA
--15mA
--1.6
--10mA
--1.4
--1.2
--1.0 --5mA
--0.8
--0.6
--2mA
--0.4
--0.2
0
DataSheet4U.com 0
IB=0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Collector-to-Emitter Voltage, VCE -- V IT07248
DataSheet4 U .com
--2.0
VCE= --2V
--1.5
IC -- VBE
--1.0
--0.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.0
Base-to-Emitter Voltage, VBE -- V IT07249
No.7920-2/4




 2SA2124
www.DataSheet4U.com
hFE -- IC
7
5
Ta=75°C
3 25°C
--25°C
2
2SA2124
VCE= --2V
1000
7
5
3
2
f T -- IC
VCE= --10V
100
7
5
--0.01
7
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
Cob -- VCB
23
IT07250
f=1MHz
5
100
7
5
--0.01
5
3
2
23
5 7 --0.1
2 3 5 7 --1.0
Collector Current, IC -- A
VCE(sat) -- IC
23
IT07251
IC / IB=20
3 --0.1
2
7
5
Ta=75°--C25°C
3 25°C
2
et4U.com
10
--0.1
3
2
--1.0
7
5
3
--0.01
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
--0.01
--0.01
23
5 7 --0.1
2 3 5 7 --1.0
23 5
Collector-to-Base Voltage, VCB -- V DITa0t7a25S2 heet4U.com
VBE(sat) -- IC
--10
IC / IB=20
7 ICP= --5A
5
3 IC= --2A
2
Ta= --25°C
--1.0
7
5
3
Collector Current, IC -- A
ASO
IT07253
<10µs
1ms
DDisCsipoaptieorna1Lti01iom00nmimtessd
75°C
2
25°C
--0.1
7
5
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
PC -- Ta
23 5
IT07254
3
2 Tc=25°C
--0.01 Single Pulse
--0.1 2 3 5 7 --1.0
2 3 5 7 --10
23
5
Collector-to-Emitter Voltage, VCE -- V IT07255
PC -- Tc
4.0
Mounted on a ceramic board (450mm 2!0.8mm)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
DataShee
0
DataSheet4U.com 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07256
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT07257
No.7920-3/4
DataSheet4 U .com



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