DatasheetsPDF.com

type Transistor. 2SA2102 Datasheet

DatasheetsPDF.com

type Transistor. 2SA2102 Datasheet






2SA2102 Transistor. Datasheet pdf. Equivalent




2SA2102 Transistor. Datasheet pdf. Equivalent





Part

2SA2102

Description

Silicon PNP epitaxial planar type Transistor



Feature


www.DataSheet4U.com Power Transistors 2SA2102 Silicon PNP epitaxial planar ty pe Unit: mm ■ Features • High-spee d switching (tstg: storage time/tf: fal l time is short) • Low collector-emit ter saturation voltage VCE(sat) • Sup erior forward current transfer ratio hF E linearity • TO-220D built-in: Excel lent package with withstand voltage 5 k V guaranteed 13.7±0.2 4.2±0.
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SA2102 Datasheet


Panasonic Semiconductor 2SA2102

2SA2102; .2 Solder Dip 15.0±0.5 Power supply f or Audio & Visual equipments such as TV s and VCRs Industrial equipments such a s DC-DC converters 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 φ 3.2±0.1 1.4±0. 2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0. 15 ■ Absolute Maximum Ratings TC = 2 5°C 1 2 2.54±0.30 5.08±0.50 3 Para meter Collector-base voltage (Emitter o pen) Collector-emitter voltage (Bas.


Panasonic Semiconductor 2SA2102

e open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Jun ction temperature Storage temperature T C = 25°C Ta = 25°C Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −60 60 −6 −3 −5 15 2 150 −55 to +1 50 Unit V V V A A 1: Base 2: Collecto r 3: Emitter TO-220D-A1 Package DataSh ee Marking Symbol: A2102 Intern.


Panasonic Semiconductor 2SA2102

al Connection C B DataSheet4U.com W °C °C E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector -emitter voltage (Base open) Collector- base cutoff current (Emitter open) Coll ector-emitter cutoff current (Base open ) Forward current transfer ratio Symbol VCEO ICBO ICEO hFE1 hFE2 hFE3 Collecto r-emitter saturation voltage Transition frequency Turn-on time S.

Part

2SA2102

Description

Silicon PNP epitaxial planar type Transistor



Feature


www.DataSheet4U.com Power Transistors 2SA2102 Silicon PNP epitaxial planar ty pe Unit: mm ■ Features • High-spee d switching (tstg: storage time/tf: fal l time is short) • Low collector-emit ter saturation voltage VCE(sat) • Sup erior forward current transfer ratio hF E linearity • TO-220D built-in: Excel lent package with withstand voltage 5 k V guaranteed 13.7±0.2 4.2±0.
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SA2102 Datasheet




 2SA2102
www.DataSheet4U.com
Power Transistors
2SA2102
Silicon PNP epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
Features
High-speed switching (tstg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage VCE(sat)
Superior forward current transfer ratio hFE linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60 V
60 V
6 V
3 A
5 A
DataSheet4U.com
15 W
2
150 °C
55 to +150 °C
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: A2102
DataShee
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
hFE1
hFE2
hFE3
VCE(sat)
fT
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −60 V, IE = 0
VCE = −60 V, IB = 0
VCE = −4 V, IC = − 0.2 A
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = −3 A
IC = −3 A, IB = − 0.375 A
VCE = 10 V, IC = − 0.1 A, f = 10 MHz
IC = −1 A, Resistance loaded
IB1 = − 0.1 A, IB2 = 0.1 A
VCC = −50 V
60 V
100 µA
100 µA
60
80 250
30
0.8 V
100 MHz
0.2 µs
0.4 µs
0.1 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
DataSheet4U.com
Publication date: November 2002
DataSheet4 U .com
SJD00296AED
1




 2SA2102
www.DataSheet4U.com
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
et4U.com
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
nthoeticperofdourcmtso,dthifeicraetfioorne,aansdk/ofor rimthperomvoeDsmtaeutnaptS-.tohA-etdteahttee4UfPinr.ocadlousmtcatgSetaonfdyaorudrsdinesaidgvna, npcuercthoamsiankge,
or use of
sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
DataSheet4U.com
DataSheet4 U .com
2002 JUL







Recommended third-party 2SA2102 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)