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N-Channel MOSFET. 2SK3760 Datasheet

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N-Channel MOSFET. 2SK3760 Datasheet






2SK3760 MOSFET. Datasheet pdf. Equivalent




2SK3760 MOSFET. Datasheet pdf. Equivalent





Part

2SK3760

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3760 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3760 unit•F ‚•‚• Switching Regulator Appli cations 3.84•} 0 .2 3.84•}0.2 10. 5 10.5max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. 1.3 • • • • Low drain-source ON resistance: R DS (ON) = 1.7ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage .
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3760 Datasheet


Toshiba Semiconductor 2SK3760

2SK3760; current: IDSS = 100 ƒÊ A (V DS = 600 V ) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 13.4 13.4min mi n. 3.9 max 3.9 max. Maximum Ratings (Ta = 25°C) Characteristics Drain-sour ce voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain cu rrent (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rat.


Toshiba Semiconductor 2SK3760

ing 600 600 ±30 3.5 14 60 6.3 W mJ A mJ °C °C Unit V V V A 15.6 max 15.6 ma x. 2.7 1.5 1.5 max max 0.81 0.81 max 0.45 0.45 2.7 2.54 2.54 2.7 1 2 3 Drain power dissipation (Tc = 25°C) Si ngle pulse avalanche energy (Note 2) Av alanche current Repetitive avalanche en ergy (Note 3) Channel temperature Stora ge temperature range 1. 2. 3. Gate Dr ain(HEAT SINK) Source .


Toshiba Semiconductor 2SK3760

DataSheet4U.com 6 150 -55~150 3.5 Dat aShee JEDEC JEITA TOSHIBA TO-220AB SC -46 • Thermal Characteristics Charac teristics Thermal resistance, channel t o case Thermal resistance, channel to a mbient Symbol Rth (ch-c) Rth (ch-a) Max 2.08 83.3 Unit °C/W °C/W Weight : 2 .0g(typ.) 2 Note 1: Please use devices on conditions that the channel tempera ture is below 150°C. N.

Part

2SK3760

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3760 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3760 unit•F ‚•‚• Switching Regulator Appli cations 3.84•} 0 .2 3.84•}0.2 10. 5 10.5max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. 1.3 • • • • Low drain-source ON resistance: R DS (ON) = 1.7ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage .
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3760 Datasheet




 2SK3760
www.DataSheet4U.com
2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3760
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)
High forward transfer admittance: |Yfs| = 2.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
3.84 0.2
3.84 0.2
101.05. 5mmaax x
unit
44..77mmaxax
1.3
1.3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
11..55mmaxax
0.81
0.81 max
00..4455
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
600 V
600 V
±30 V
3.5 A
IDP 14
PD 60 W
EAS 6.3 mJ
IAR DataShe3.e5t4U.com A
EAR 6 mJ
Tch 150 °C
Tstg
-55~150
°C
2.25.544
123
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
JEITA
TO-220AB
SC-46
Thermal Characteristics
TOSHIBA
Characteristics
Symbol
Max Unit
Weight : 2.0g(typ.)
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.08 °C/W
83.3 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.9 mH, IAR = 3.5 A, RG = 25
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
DataShee
DataSheet4U.com
DataSheet4 U .com
1 2004-02-26




 2SK3760
www.DataSheet4U.com
2SK3760
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
IGSS
VGS = ±25 V, V DS = 0 V
  ±10 µA
V (BR) GSS ID = ±10 µA, V GS = 0 V
±30   V
IDSS
VDS = 600 V, V GS = 0 V
  100 µA
V (BR) DSS ID = 10 mA, VGS = 0 V
600   V
Vth VDS = 10 V, ID = 1 mA
2.0 4.0 V
RDS (ON) VGS = 10 V, ID = 1.8 A
1.7 2.2
Yf s
VDS = 10 V, ID = 1.8 A
0.7 2.5
S
Ciss
Crss
Coss
VDS = 25 V, V GS = 0 V, f = 1 MHz
550
6 pF
60
tr
10 V
VGS
ID = 1.8 A VOUT
12
0V
ton
50
RL = 45
111
ns
tf 13
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 µs
80
et4U.com
Total gate charge
Gate-source charge
Gate-drain charge
Qg 16
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 3.5 A 10 nC
Qgd
DataSheet4U.com
6
Source-Drain Ratings and Characteristics (Ta = 25°C)
DataShee
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
ID R P
VDSF
trr
Qrr
Test Condition
IDR = 3.5 A, V GS = 0 V
IDR = 3.5 A, V GS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
  3.5 A
  14 A
  −1.7 V
1400
ns
9  µC
Marking
K3760
Lot Number
TYPE
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
DataSheet4U.com
DataSheet4 U .com
2 2004-02-26




 2SK3760
www.DataSheet4U.com
ID – VDS
2
COMMON SOURCE 15,10
Tc = 25°C
PULSE TEST
1.6
8
5.5
6
5
4.8
1.2
4.6
0.8
4.4
0.4
4.2
VGS = 4V
0
0 1 2345
DRAIN-SOURCE VOLTAGE VDS (V)
2SK3760
ID – VDS
5
15,10
6
8 5.5
4
COMMON SOURCE
Tc = 25°C
3 PULSE TEST
5
2
1 4.5
VGS = 4 V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
et4U.com
ID – VGS
4
COMMON SOURCE
VDS = 10 V
3 PULSE TEST
VDS – VGS
20
COMMON SOURCE
Tc = 25
16 PULSE TEST
12
2 DataSheet4U.com
8
Tc = −55°C
1 100
25
4
ID = 3.5 A
1.8
0
0 2 4 6 8 10
0
04
1
8 12 16
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE VGS (V)
DataShee
Yf s– ID
10
Tc = −55°C
25
100
1
0.1
0.1
COMMON SOURCE
VDS= 20 V
PULSE TEST
1 10
DRAIN CURRENT DI (A)
DataSheet4U.com
DataSheet4 U .com
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
VGS = 10 V 15V
1
0.1 1
DRAIN CURRENT DI (A)
10
3 2004-02-26



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