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N-Channel MOSFET. 2SK3761 Datasheet

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N-Channel MOSFET. 2SK3761 Datasheet






2SK3761 MOSFET. Datasheet pdf. Equivalent




2SK3761 MOSFET. Datasheet pdf. Equivalent





Part

2SK3761

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3761 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3761 unit•F ‚•‚• Switching Regulator Appli cations 3.84•}0.2 3.84•} 0 .2 10.5 10.5 max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. • • • • Low drai n-source ON resistance: R DS (ON) = 0.9 ƒ¶ (typ.) High forward transfer admit tance: |Yfs| = 5.0S (typ.) Low leakage curre.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3761 Datasheet


Toshiba Semiconductor 2SK3761

2SK3761; nt: IDSS = 100 ƒÊ A (V DS = 600 V) Enh ancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 1.3 13.4 min 13.4 m in. 3.9 max 3.9 max. Maximum Ratings (Ta = 25°C) Characteristics Drain-sour ce voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain cu rrent (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rat.


Toshiba Semiconductor 2SK3761

ing 600 600 ±30 6 24 74 54 W mJ A mJ ° C °C Unit V V V A 15.6 max 15.6 max. 2.7 1.5 max 1.5 max 0.81 0.81 max 0.4 5 0.45 2.7 2.54 2.54 1 2 3 2.7 Drain power dissipation (Tc = 25°C) Single p ulse avalanche energy (Note 2) Avalanch e current Repetitive avalanche energy ( Note 3) Channel temperature Storage tem perature range DataSheet4U.com 7.4 150 -55~150 6 1. 2. 3. .


Toshiba Semiconductor 2SK3761

Gate Drain(HEAT SINK) Source DataShee JEDEC JEITA TOSHIBA TO-220AB SC-46 Thermal Characteristics Characterist ics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.68 83.3 Unit °C/W °C/W Weight : 2.0g(ty p.) 2 Note 1: Please use devices on co nditions that the channel temperature i s below 150°C. Note 2:.

Part

2SK3761

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3761 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3761 unit•F ‚•‚• Switching Regulator Appli cations 3.84•}0.2 3.84•} 0 .2 10.5 10.5 max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. • • • • Low drai n-source ON resistance: R DS (ON) = 0.9 ƒ¶ (typ.) High forward transfer admit tance: |Yfs| = 5.0S (typ.) Low leakage curre.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3761 Datasheet




 2SK3761
www.DataSheet4U.com
2SK3761
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3761
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)
High forward transfer admittance: |Yfs| = 5.0S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
3.84 0.2
3.84 0.2
101.05.5mmaax x
unit
44..77mmax ax
1.3
1.3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
11..55mmaxax
0.81
0.81 max
00..4455
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
600 V
600 V
±30 V
6A
IDP 24
PD 74 W
EAS 54 mJ
IAR DataShe6et4U.com A
EAR 7.4 mJ
Tch 150 °C
Tstg
-55~150
°C
2.25.544
123
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
JEITA
TO-220AB
SC-46
Thermal Characteristics
TOSHIBA
Characteristics
Symbol
Max Unit
Weight : 2.0g(typ.)
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
1.68 °C/W
83.3 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 2.6 mH, IAR = 6 A, RG = 25
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
DataShee
DataSheet4U.com
DataSheet4 U .com
1 2004-02-26




 2SK3761
www.DataSheet4U.com
2SK3761
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
IGSS
VGS = ±25 V, V DS = 0 V
  ±10
V (BR) GSS ID = ±10 µA, V GS = 0 V
±30
IDSS
VDS = 600 V, V GS = 0 V
  100
V (BR) DSS ID = 10 mA, VGS = 0 V
600
Vth VDS = 10 V, ID = 1 mA
2.0 4.0
RDS (ON) VGS = 10 V, ID = 3 A
0.9 1.25
Yf s
VDS = 10 V, ID = 3 A
1.2 5.0
Ciss
Crss
Coss
VDS = 25 V, V GS = 0 V, f = 1 MHz
1050
10
110
tr
10 V
VGS
ID = 3 A VOUT
20
0V
ton
50
RL = 40
66
tf 35
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 µs
130
µA
V
µA
V
V
S
pF
ns
et4U.com
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 6 A
Qgd
DataSheet4U.com
Source-Drain Ratings and Characteristics (Ta = 25°C)
28
16 nC
12
DataShee
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
ID R P
VDSF
trr
Qrr
Test Condition
IDR = 6 A, V GS = 0 V
IDR = 6 A, V GS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
 6 A
  24 A
  −1.7 V
1000
ns
7  µC
Marking
K3761
Lot Number
TYPE
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
DataSheet4U.com
DataSheet4 U .com
2 2004-02-26




 2SK3761
www.DataSheet4U.com
5
COMMON
SOURCE
Tc = 25°C
4 PULSE TEST
ID – VDS
15 10
6
5
4.8
3
4.6
4.4
2
4.2
1
VGS = 4 V
0
0 246 8
DRAIN-SOURCE VOLTAGE VDS
10
(V)
2SK3761
10
10,15
8
ID – VDS
5.2
5
COMMON SOURCE
Tc = 25°C
PULSE TEST
6 4.8
4.6
4
4.4
2 4.2
VGS = 4 V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
et4U.com
ID – VGS
10
COMMON SOURCE
VDS = 20 V
8
PULSE TEST
VDS – VGS
10
COMMON SOURCE
Tc = 25
8 PULSE TEST
66
DataSheet4U.com
ID = 6 A
44
Tc = −55°C
2 100
25
0
0 2 4 6 8 10
23
1.5
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE VGS (V)
DataShee
Yf s– ID
100
10
1
0.1
0.1
Tc = −55°C
25
100
COMMON SOURCE
VDS= 20 V
PULSE TEST
1 10
DRAIN CURRENT DI (A)
DataSheet4U.com
DataSheet 4 U .com
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V 15V
0.1
0.1
1
DRAIN CURRENT DI (A)
10
3 2004-02-26



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