DatasheetsPDF.com

N-Channel MOSFET. 2SK3762 Datasheet

DatasheetsPDF.com

N-Channel MOSFET. 2SK3762 Datasheet






2SK3762 MOSFET. Datasheet pdf. Equivalent




2SK3762 MOSFET. Datasheet pdf. Equivalent





Part

2SK3762

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3762 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type ( -MOS‡W ) 2SK3762 unit•F ‚•‚• Switching Regulator Appli cations 3.84•}0.2 3.84•} 0 .2 10.5 10.5 max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. • • • • Low drai n-source ON resistance: R DS (ON) = 5.6 ƒ¶ (typ.) High forward transfer admit tance: |Yfs| = 2.0 S (typ.) Low leakage curr.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3762 Datasheet


Toshiba Semiconductor 2SK3762

2SK3762; ent: IDSS = 100 ƒÊ A (V DS = 720 V) En hancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 1.3 13.4 13.4 min min. 3.9 max 3.9 max. Maximum Ratings (Ta = 25°C) Characteristics Drain-sou rce voltage Drain-gate voltage (RGS = 2 0 kΩ ) Gate-source voltage DC Drain c urrent (Note 1) Symbol V DSS V DGR V GS S ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Ra.


Toshiba Semiconductor 2SK3762

ting 900 900 ±30 2.5 7.5 62 21.6 W mJ A mJ °C °C Unit V V V A 15.6 max 15.6 max. 2.7 1.5 max 1.5 max 0.81 0.81 m ax 0.45 0.45 2.7 2.54 2.54 1 2 3 2.7 Drain power dissipation (Tc = 25°C) Si ngle pulse avalanche energy (Note 2) Av alanche current Repetitive avalanche en ergy (Note 3) Channel temperature Stora ge temperature range DataSheet4U.com 6 .2 150 -55~150 2.5 1.


Toshiba Semiconductor 2SK3762

. 2. 3. Gate Drain(HEAT SINK) Source D ataShe e JEDEC JEITA TOSHIBA TO-220A B SC-46 • Thermal Characteristics Ch aracteristics Thermal resistance, chann el to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.02 83.3 Unit °C/W °C/W Weight : 2.0g(typ.) 2 Note 1: Please use dev ices on conditions that the channel tem perature is below 150°.

Part

2SK3762

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3762 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type ( -MOS‡W ) 2SK3762 unit•F ‚•‚• Switching Regulator Appli cations 3.84•}0.2 3.84•} 0 .2 10.5 10.5 max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. • • • • Low drai n-source ON resistance: R DS (ON) = 5.6 ƒ¶ (typ.) High forward transfer admit tance: |Yfs| = 2.0 S (typ.) Low leakage curr.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3762 Datasheet




 2SK3762
www.DataSheet4U.com
2SK3762
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3762
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 5.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 720 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
3.84 0.2
3.84 0.2
101.05.5mmaax x
unit
44..77mmaxax
1.3
1.3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
11..55mmaxax
0.81
0.81 max
00..4455
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
900 V
900 V
±30 V
2.5 A
IDP 7.5
PD 62 W
EAS 21.6 mJ
IAR DataShe2.e5t4U.com A
EAR 6.2 mJ
Tch 150 °C
Tstg
-55~150
°C
2.25.544
123
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
JEITA
TO-220AB
SC-46
Thermal Characteristics
TOSHIBA
Characteristics
Symbol
Max Unit
Weight : 2.0g(typ.)
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.02 °C/W
83.3 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 6.3 mH, IAR = 2.5 A, RG = 25
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
DataShee
DataSheet4U.com
DataSheet4 U .com
1 2004-02-26




 2SK3762
www.DataSheet4U.com
2SK3762
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
IGSS
VGS = ±30 V, V DS = 0 V
  ±10 µA
V (BR) GSS ID = ±10 µA, V GS = 0 V
±30   V
IDSS
VDS = 720 V, V GS = 0 V
  100 µA
V (BR) DSS ID = 10 mA, VGS = 0 V
900   V
Vth VDS = 10 V, ID = 1 mA
2.0 4.0 V
RDS (ON) VGS = 10 V, ID = 1.5 A
5.6 6.4
Yf s
VDS = 20 V, ID = 1.5 A
1.0 2.0
S
Ciss
Crss
Coss
VDS = 25 V, V GS = 0 V, f = 1 MHz
470
10 pF
50
tr
10 V
VGS
ID = 1.5 A VOUT
20
0V
ton
50
RL = 60
133
ns
tf 30
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 µs
100
et4U.com
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID =2.5 A
Qgd
DataSheet4U.com
Source-Drain Ratings and Characteristics (Ta = 25°C)
12
7 nC
5
DataShee
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Marking
Symbol
IDR
ID R P
VDSF
trr
Qrr
Test Condition
IDR =2.5 A, V GS = 0 V
IDR = 2.5 A, V GS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
  2.5 A
  7.5 A
  −1.7 V
720 ns
3.6  µC
K3762
Lot Number
TYPE
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
DataSheet4U.com
DataSheet4 U .com
2 2004-02-26




 2SK3762
www.DataSheet4U.com
2
COMMON
SOURCE
Tc = 25°C
1.6
PULSE TEST
ID – VDS
8
6
10 5.5
1.2
5.25
5
0.8
4.75
0.4 4. 5
VGS = 4 V
0
0 4 8 12 16 20 24
DRAIN-SOURCE VOLTAGE VDS (V)
2SK3762
3
COMMON
SOURCE
2.5 Tc = 25°C
PULSE TEST
2
ID – VDS
10
6
8
5.5
5.25
1.5
5
1
4.75
0.5 4. 5
VGS = 4 V
0
0 12 24 36
DRAIN-SOURCE VOLTAGE VDS (V)
et4U.com
ID – VGS
5
COMMON SOURCE
VDS = 20 V
4
PULSE TEST
VDS – VGS
40
COMMON SOURCE
Tc = 25
PULSE TEST
30
3
DataSheet4U.co2m0
ID = 2.5 A
2
100 Tc = −55°C
1
25
0
0 2 4 6 8 10 12
GATE-SOURCE VOLTAGE VGS (V)
1.5
10
0.8
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
DataShee
Yf s– ID
10
Tc = −55°C
1
25
100
0.1
0.01
0.01
COMMON SOURCE
VDS= 20 V
PULSE TEST
0.1 1 10
DRAIN CURRENT DI (A)
DataSheet4U.com
DataSheet4 U .com
RDS (ON) – ID
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10 VGS = 10 V
1
0.01
0.1
1
DRAIN CURRENT DI (A)
10
3 2004-02-26



Recommended third-party 2SK3762 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)