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N-Channel MOSFET. 2SK3767 Datasheet

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N-Channel MOSFET. 2SK3767 Datasheet






2SK3767 MOSFET. Datasheet pdf. Equivalent




2SK3767 MOSFET. Datasheet pdf. Equivalent





Part

2SK3767

Description

Silicon N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3767 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON ) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low lea kage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3767 Datasheet


Toshiba Semiconductor 2SK3767

2SK3767; : mm Maximum Ratings (Ta = 25°C) Chara cteristics Drain-source voltage Drain-g ate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1 ) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 2 5 25 93 2 Unit V V V A W mJ A 1 : Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse a valanche energy (Note 2.


Toshiba Semiconductor 2SK3767

) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature St orage temperature range DataShee JEDEC JEITA TOSHIBA ― SC-67 2-10U1B DataS heet4U.com 4 mJ 150 -55~150 °C °C We ight : 1.7 g (typ.) Thermal Characteri stics Characteristics Thermal resistanc e, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rt h (ch-a) Max 5.0 62.5 .


Toshiba Semiconductor 2SK3767

Unit °C/W °C/W 2 Note 1: Ensure that the channel temperature does not excee d 150℃. 1 Note 2: VDD = 90 V, Tch = 25°C(initial)), L = 41mH, RG = 2 5 Ω , IAR = 2 A Note 3: Repetitive ra ting: pulse width limited by maximum ch annel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 DataSheet4U.c om 1 DataSheet 4 U .com 2004-.

Part

2SK3767

Description

Silicon N-Channel MOSFET



Feature


www.DataSheet4U.com 2SK3767 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON ) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low lea kage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3767 Datasheet




 2SK3767
www.DataSheet4U.com
2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.)
High forward transfer admittance: |Yfs| = 1.6S (typ.)
Low leakage current: IDSS = 100μA (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS 600 V
VDGR 600 V
VGSS ±30 V
ID 2
A
IDP 5
PD 25 W
EAS 93 mJ
IAR 2 A
EAR DataShe4et4U.commJ
Tch 150 °C
Tstg
-55~150
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
5.0
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°Cinitial)), L = 41mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
DataShee
DataSheet4U.com
DataSheet4 U .com
1 2004-12-10




 2SK3767
www.DataSheet4U.com
et4U.com
2SK3767
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±10 µA
±30
V
⎯ ⎯ 100 µA
600
V
2.0 4.0
V
3.3 4.5
0.8 1.6
S
320
30 pF
100
Rise time
Switching time Turn-on time
Fall time
Turn-off time
tr 10 V
VGS
ton 0 V
tf
ID = 1A
15
Output
RL =
200
55
ns
20
toff Duty <= 1%, tw = 10 µs VDD ∼− 200 V 80
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 2A
Qgd
DataSheet4U.com
9
5 nC
4
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯⎯ 2 A
⎯⎯ 5 A
⎯ ⎯ −1.7 V
1000
ns
3.5 ⎯ µC
Marking
DataShee
K3767
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
DataSheet4U.com
DataSheet4 U .com
2
2004-12-10




 2SK3767
www.DataSheet4U.com
2
10
1.6
ID – VDS
5.5
6
5.25
1.2 5
0.8 4.75
4.5
0.4
Common source
VGS = 4V
Tc = 25°C
Pulse test
0
0 4 8 12 16 20 24
Drain-source voltage VDS (V)
2SK3767
4
Common source
Tc = 25°C
Pulse test
3
ID – VDS
10
6
5.5
2
5.25
5
1
4.75
4.5
VGS = 4V
0
0 4 8 12 16 20 24
Drain-source voltage VDS (V)
et4U.com
5
Common source
4 VDS = 20 V
Pulse test
ID – VGS
3
2
Tc=100
1
55
25
0
0 246 8
Gate-source voltage VGS (V)
VDS – VGS
20
Common source
Tc = 25
16 Pulse test
12
DataSheet4U.com
8
4
ID = 2A
1
0.5
0
10 0 4 8 12 16 20
Gatesource voltage VGS (V)
DataShee
10
1
0.1
0.01
0.01
DataSheet4U.com
DataSheet4 U .com
Yfs– ID
Tc = −55°C
25
100
Common source
VDS = 20 V
Pulse test
0.1 1
Drain current ID (A)
10
RDS (ON) – ID
100 Common source
Tc = 25°C
Pulse test
10
VGS=10V
1
0.01
3
0.1 1
Drain current ID (A)
10
2004-12-10



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