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N-Channel MOSFET. APM2054N Datasheet

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N-Channel MOSFET. APM2054N Datasheet
















APM2054N MOSFET. Datasheet pdf. Equivalent













Part

APM2054N

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com APM2054N N-Channel Enhancement Mode MOSFETE Features • • • • 20V/6A, RDS(ON)=35mΩ(typ. ) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS= 4.5V Super High Dense Cell Design High Power and Current Handling Capability T O-252, SOT-89 and SOT-223 Packages Pin Description G G D S D S Top View o f TO-252 Top View of SOT-89 Applicati ons • • Switching Regulators S.
Manufacture

Anpec Electronics Coropration

Datasheet
Download APM2054N Datasheet


Anpec Electronics Coropration APM2054N

APM2054N; witching Converters 1 2 3 G D S ee D ataSh Ordering Information APM2054N D ataSheet4U.com Top View of SOT-223 Han dling Code Temp. Range Package Code Pa ckage Code D : SOT-89 U : TO-252 Temp. Range C : 0 to 70 ° C Handling Code TR : Tape & Reel V : SOT-223 Absolute M aximum Ratings Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltag e Parameter (TA = .


Anpec Electronics Coropration APM2054N

25°C unless otherwise noted) Rating 20 ±16 6 20 Unit V A Maximum Drain Cur rent – Continuous Maximum Drain Curre nt – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, a nd advise customers to obtain the lates t version of relevant information to ve rify before placing orders. Copyright ANPEC Electronics Corp..


Anpec Electronics Coropration APM2054N

DataSheet4U.com Rev. A.1 - Feb., 2002 1 www.anpec.com.tw DataSheet 4 U .com www.DataSheet4U.com APM2054N Absolute Maximum Ratings Symbol (TA = 25°C unl ess otherwise noted) Rating TO-252 TA=2 5°C SOT-223/SOT-89 TO-252 TA=100°C SO T-223/SOT-89 50 W 3 10 W 1.2 150 -55 to 150 °C °C Unit Parameter PD Maxim um Power Dissipation TJ TSTG Maximum Junction Temperature St.





Part

APM2054N

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com APM2054N N-Channel Enhancement Mode MOSFETE Features • • • • 20V/6A, RDS(ON)=35mΩ(typ. ) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS= 4.5V Super High Dense Cell Design High Power and Current Handling Capability T O-252, SOT-89 and SOT-223 Packages Pin Description G G D S D S Top View o f TO-252 Top View of SOT-89 Applicati ons • • Switching Regulators S.
Manufacture

Anpec Electronics Coropration

Datasheet
Download APM2054N Datasheet




 APM2054N
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APM2054N
N-Channel Enhancement Mode MOSFETE
Features
20V/6A,
RDS(ON)=35m(typ.)
@
V =10V
GS
RDS(ON)=45m(typ.) @ VGS=4.5V
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252, SOT-89 and SOT-223 Packages
Applications
Pin Description
GD S
Top View of TO-252
GD
S
Top View of SOT-89
Switching Regulators
Switching Converters
Ordering Information
1 23
G DS
DataSheet4U.com
Top View of SOT-223
APM2054N
Handling Code
Temp. Range
Package Code
Package Code
D : SOT-89
U : TO-252
Temp. Range
C : 0 to 70 °C
Handling Code
TR : Tape & Reel
V : SOT-223
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Rating
20
±16
6
20
Unit
V
A
DataShee
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
DataSheet4U.coCmopyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2002
1
www.anpec.com.tw
DataSheet4 U .com




 APM2054N
www.DataSheet4U.com
APM2054N
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
PD
TJ
TSTG
Parameter
Maximum Power Dissipation
TA=25°C
TA=100°C
Maximum Junction Temperature
Storage Temperature Range
TO-252
SOT-223/SOT-89
TO-252
SOT-223/SOT-89
Rating
50
3
10
1.2
150
-55 to 150
Unit
W
W
°C
°C
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
Parameter
Test Condition
et4U.com
Static
BVDSS
IDSS
VGS(th)
IGSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
RDS(ON) Resistance
VSD Diode Forward Voltage
Dynamic
VGS=0V, IDS=250µA
VDS=16V, VGS=0V
DataSheet4U.com
VDS=VGS, IDS=250µA
VGS=±16V, VDS=0V
VGS=10V, IDS=12A
VGS=4.5V, IDS=6A
VGS=2.5V, IDS=2A
ISD=6A, VGS=0V
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=6A
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=10V, IDS=1A,
VGEN=4.5V, RG=0.2
Input Capacitance
VGS=0V
Output Capacitance
VDS=15V
Reverse Transfer Capacitance Frequency=1.0MHz
DataSheet4U.coCmopyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2002
2
APM2054N
Unit
Min. Typ. Max.
20 V
1 µA
0.6 1.5 V
±100 nA
35 40
45 54 m
110 130
0.6 1.1 V
11 13
3.8 nC
5.2
12
10
ns
40
20
450
100 pF
60
www.anpec.com.tw
DataShee
DataSheet4 U .com




 APM2054N
www.DataSheet4U.com
APM2054N
Typical Characteristics
et4U.com
Output Characteristics
20
VGS=4,5,6,7,8,9,10V
15
VGS=3V
10
Transfer Characteristics
20
15
10
5
VGS=2V
0
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
TJ=25°C
5
TJ=125°C
TJ=-55°C
0
012345
VGS - Gate-to-Source Voltage (V)
DataSheet4U.com
DataShee
Threshold Voltage vs. Temperature
1.50
IDS=250uA
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
0.08
0.07
0.06
0.05
VGS=4.5V
0.04
0.03
VGS=10V
0.02
0.01
0.00
0
2468
ID - Drain Current (A)
10
DataSheet4U.coCmopyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2002
DataSheet4 U .com
3
www.anpec.com.tw




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