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N-Channel MOSFET. AOT400 Datasheet

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N-Channel MOSFET. AOT400 Datasheet
















AOT400 MOSFET. Datasheet pdf. Equivalent













Part

AOT400

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com AOT400 N-Channel En hancement Mode Field Effect Transistor General Description The AOT400 uses adv anced trench technology and design to p rovide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general pur pose applications. Standard Product AOT 400 is Pb-free (meets ROHS & Sony 259 s pecifications). AO.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AOT400 Datasheet


Alpha & Omega Semiconductors AOT400

AOT400; T400L is a Green Product ordering option . AOT400 and AOT400L are electrically i dentical. TO-220 D Features VDS (V) = 75V ID = 110 A (VGS = 10V) RDS(ON) < 4. 7 mΩ (VGS = 10V) RDS(ON) < 5.2 mΩ ( VGS = 6V) Top View Drain Connected to Tab DataShee G S DataSheet4U.com G D S Absolute Maximum Ratings TA=25°C un less otherwise noted Parameter Symbol V DS Drain-Source Voltage.


Alpha & Omega Semiconductors AOT400

VGS Gate-Source Voltage Continuous Drai n Current G Pulsed Drain Current Avalan che Current C C C Maximum 75 ±20 110 110 200 100 1500 300 150 -55 to 175 Un its V V A A mJ W °C TC=25°C TC=100° C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Pow er Dissipation B TC=100°C Junction an d Storage Temperature Range Thermal Cha racteristics Parameter M.


Alpha & Omega Semiconductors AOT400

aximum Junction-to-Ambient A Maximum Jun ction-to-Case B Steady-State Steady-St ate Symbol RθJA RθJC Typ 65 0.25 M ax 75 0.5 Units °C/W °C/W DataSheet 4U.com Alpha & Omega Semiconductor, Ltd . DataSheet 4 U .com www.DataSheet4U. com AOT400 Electrical Characteristics (T J=25°C unless otherwise noted) Par ameter Symbol STATIC PARAMETERS BVDSS D rain-Source Breakdown V.





Part

AOT400

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com AOT400 N-Channel En hancement Mode Field Effect Transistor General Description The AOT400 uses adv anced trench technology and design to p rovide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general pur pose applications. Standard Product AOT 400 is Pb-free (meets ROHS & Sony 259 s pecifications). AO.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AOT400 Datasheet




 AOT400
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AOT400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT400 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT400 is Pb-free (meets ROHS & Sony
259 specifications). AOT400L is a Green Product
ordering option. AOT400 and AOT400L are
electrically identical.
TO-220
Features
VDS (V) = 75V
ID = 110 A
(VGS = 10V)
RDS(ON) < 4.7 m(VGS = 10V)
RDS(ON) < 5.2 m(VGS = 6V)
D
G DS
Top View
Drain Connected
to Tab
G
DataSheet4U.com
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
75
±20
110
110
200
100
1500
300
150
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
65
0.25
Max
75
0.5
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
DataSheet4U.com
Alpha & Omega Semiconductor, Ltd.
DataSheet4 U .com
DataShee




 AOT400
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AOT400
Electrical Characteristics (TJ=25°C unless otherwise noted)
et4U.com
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
75
V
IDSS Zero Gate Voltage Drain Current
VDS=75V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
2 2.8 4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
TJ=125°C
4.2 4.7
m
7.2 8.2
VGS=6V, ID=30A
4.6 5.2 m
gFS
Forward Transconductance
VDS=5V, ID=30A
VDS=15V, ID=70A
106
S
200
VSD Diode Forward Voltage
IS=1A, VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
110 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
8390
1060
450
1.2
10500
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
DataSheet4U.com
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=30A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
167 210
40
45
29
41
90
34
64 80
180
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DataSheet4U.com
Alpha & Omega Semiconductor, Ltd.
DataSheet4 U .com
DataShee




 AOT400
www.DataSheet4U.com
AOT400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
et4U.com
200
10V
175
6V
150
5V
125
100
75 4.5V
50
25 VGS=4V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics
5
80
VDS=5V
60
40 125°C
25°C
20
0
2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
5
6 2.2
2
5
VGS=6V
1.8 VGS=10V, 30A
1.6
4 VGS=10V
1.4
VGS=6V,30A
3 1.2
DataShe1et4U.com
2
0 20 40 60 80 100
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
12 1.0E+02
10
ID=30A
1.0E+01
125°C
1.0E+00
8 125°C
1.0E-01
6 25°C
1.0E-02
25°C
4 1.0E-03
2
4 8 12 16 20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04
0.0
0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
DataShee
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Alpha & Omega Semiconductor, Ltd.
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