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Gain Amplifier. AMMC-5620 Datasheet

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Gain Amplifier. AMMC-5620 Datasheet
















AMMC-5620 Amplifier. Datasheet pdf. Equivalent













Part

AMMC-5620

Description

Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier



Feature


www.DataSheet4U.com Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier Data Shee t Features • Frequency Range: 6 - 20 GHz • High Gain: 19 dB Typical • O utput Power: 15dBm Typical • Input an d Output Return Loss: < -10 dB Chip Siz e: Chip Thickness: Pad Dimensions: 1410 x 1010 µm (55.5 x 39.7 mils) 100 ± 1 0µm (4 ± 0.4 mils) 80 x 80 µm (3.1 x 3.1 mils or larger) Chip Size .
Manufacture

Hewlett-Packard

Datasheet
Download AMMC-5620 Datasheet


Hewlett-Packard AMMC-5620

AMMC-5620; Tolerance:± 10µm (± 0.4 mils) • Po sitive Gain Slope: + 0.21dB/GHz Typical • Single Supply Bias: 5 V @ 95 mA Ty pical Applications Description Agilent ’s AMMC- 5620 MMIC is a GaAs wide- ba nd amplifier designed for medium output power and high gain over the 6 − 20 GHz frequency range. The 3 cascaded sta ges provide high gain while the single bias supply offers ease of us.


Hewlett-Packard AMMC-5620

e. It is fabricated using a PHEMT integr ated circuit process. The RF input and output ports have matching circuitry fo r use in 50- Ω environments. The back side of the chip is both RF and DC grou nd. This helps simplify the assembly pr ocess and reduces assembly related perf ormance variations and costs. The MMIC is a cost effective alternative to hybr id (discrete FET) am.


Hewlett-Packard AMMC-5620

plifiers that require complex tuning and assembly processes. DataSheet4U.com • General purpose, wide-band amplifie r in communication systems or microwave instrumentation • High gain amplifie r DataShee AMMC-5620 Absolute Maximum Ratings [1] Symbol VDD IDD PDC Pin Tch Tb Tstg Tmax Note: 1. Operation in exc ess of any one of these conditions may result in permanent da.





Part

AMMC-5620

Description

Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier



Feature


www.DataSheet4U.com Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier Data Shee t Features • Frequency Range: 6 - 20 GHz • High Gain: 19 dB Typical • O utput Power: 15dBm Typical • Input an d Output Return Loss: < -10 dB Chip Siz e: Chip Thickness: Pad Dimensions: 1410 x 1010 µm (55.5 x 39.7 mils) 100 ± 1 0µm (4 ± 0.4 mils) 80 x 80 µm (3.1 x 3.1 mils or larger) Chip Size .
Manufacture

Hewlett-Packard

Datasheet
Download AMMC-5620 Datasheet




 AMMC-5620
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Agilent AMMC-5620
6 - 20 GHz High Gain Amplifier
Data Sheet
Features
• Frequency Range: 6 - 20 GHz
• High Gain: 19 dB Typical
• Output Power: 15dBm Typical
• Input and Output Return Loss: < -10
dB
Chip Size:
1410 x 1010 µm (55.5 x 39.7 mils)
Chip Size Tolerance:± 10µm (± 0.4 mils)
Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)
• Positive Gain Slope: + 0.21dB/GHz
Typical
• Single Supply Bias: 5 V @ 95 mA
Typical
Applications
Description
Agilent’s AMMC- 5620 MMIC is a
GaAs wide- band amplifier
designed for medium output
power and high gain over the 6
20 GHz frequency range. The
3 cascaded stages provide high
gain while the single bias
supply offers ease of use. It is
fabricated using a PHEMT
integrated circuit process. The
RF input and output ports have
matching circuitry for use in
50- environments. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. The MMIC is a cost
effective alternative to hybrid
(discrete FET) amplifiers that
require complex tuning and
assembly processes.
DataSheet4U.com
• General purpose, wide-band
amplifier in communication
systems or microwave
instrumentation
• High gain amplifier
AMMC-5620 Absolute Maximum Ratings [1]
Symbol Parameters/Conditions
Units Min. Max.
VDD Drain Supply Voltage
V 7.5
IDD Total Drain Current
mA 135
PDC DC Power Dissipation
W 1.0
Pin RF CW Input Power
dBm 20
Tch Channel Temp.
°C +150
Tb Operating Backside Temp.
°C -55
Tstg Storage Temp.
°C -65 +165
Tmax Maximum Assembly Temp. (60 sec max) °C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
DataShee
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
DataSheet4U.com




 AMMC-5620
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AMMC-5620 DC Specifications / Physical Properties [1]
Symbol
Parameters and Test Conditions
Units Min.
Typical Max.
VDD Recommended Drain Supply Voltage
V5
IDD Total Drain Supply Current (V DD= 5V)
mA 70 95 130
IDD Total Drain Supply Current (VDD= 7 V)
θ ch-b
Thermal Resistance [3]
(Backside temperature (Tb) = 25°C
mA 105
°C/W 33
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (θch-b) = 47°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resistance at backside temperature
(Tb) = 25°C calculated from measured data.
et4U.com
AMMC-5620 RF Specifications [3] (Tb = 25°C, VDD = 5 V, IDD = 95mA, Zo=50)
Symbol
|S21|2
Gain Slope
Parameters and Test Conditions
Small-signal Gain
Positive Small-signal Gain Slope
Units Min.
dB 16
dB/GHz
RLin
RLout
|S12|2
P-1dB
Psat
OIP3
Input Return Loss
dB
Output Return Loss
Reverse Isolation
dB
DataSheet4U.com dB
Output Power at 1dB Gain Compression @ 20 GHz
dBm
Saturated Output Power (3dB Gain Compression) @ 20 GHz dBm
Output 3rd Order Intercept Point @ 20 GHz
dBm
10
10
12.5
14.5
NF Noise Figure @ 20 GHz
dB
Note:
3.. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
Typical
19
+0.21
13
14
- 55
15
17
23.5
4.2
Max.
22
5.0
DataShee
DataSheet4U.com
2




 AMMC-5620
www.DataSheet4U.com
AMMC-5620 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 95 mA, Zo=50)
25
20
15
10
5
0
4 7 10 13 16 19 22
FREQUENCY (GHz)
0
-10
-20
-30
-40
-50
-60
-70
4
7 10 13 16 19 22
FREQUENCY (GHz)
0
-10
-20
-30
-40
4
7 10 13 16 19 22
FREQUENCY (GHz)
Figure 1. Gain
Figure 2. Isolation
Figure 3. Input Return Loss
et4U.com
0
-10
-20
-30
-40
4
7 10 13 16 19 22
FREQUENCY (GHz)
10
8
6
4
2
0 DataSheet4U.com
4 7 10 13 16 19 22
FREQUENCY (GHz)
18
15
12
9
6
3
0
4 7 10 13 16 19 22
FREQUENCY (GHz)
Figure 4. Output Return Loss
Figure 5. Noise Figure
Figure 6.Output Power at 1 dB Gain
Compression
AMMC-5620 Typical Performance vs. Supply Voltage (Tb=25°C, Zo=50)
25 0
20
-20
15
-40
10 Vdd=4V
Vdd=5V
Vdd=6V
-60
5
Vdd=4V
Vdd=5V
Vdd=6V
0
-10
-20
-30
-40
Vdd=4V
Vdd=5V
Vdd=6V
0
4 7 10 13 16 19 22
FREQUENCY (GHz)
-80
4
7 10 13 16 19 22
FREQUENCY (GHz)
-50
4
7 10 13 16 19 22
FREQUENCY (GHz)
Figure 7. Gain and Voltage
Figure 8. Isolation and Voltage
Figure 9. Input Return Loss and Voltage
DataShee
DataSheet4U.com
3




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