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Driver Amplifier. AMMC-6345 Datasheet

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Driver Amplifier. AMMC-6345 Datasheet
















AMMC-6345 Amplifier. Datasheet pdf. Equivalent













Part

AMMC-6345

Description

20 - 45 GHz Driver Amplifier



Feature


www.DataSheet4U.com Agilent AMMC-6345 2 0 – 45 GHz Driver Amplifier Data Shee t Features Chip Size: 2500 x 1150 mm ( 100 x 69 mils) Chip Size Tolerance: ± 10mm (±0.4 mils) Chip Thickness: 100 10mm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 mm (4 ± 0.4 mils) • Wide frequency range: 20 - 45 GHz • High g ain: 20 dB • Power: @40 GHz, P-1dB=24 dBm • Highly linear: OIP3=32dB.
Manufacture

Hewlett-Packard

Datasheet
Download AMMC-6345 Datasheet


Hewlett-Packard AMMC-6345

AMMC-6345; m • Integrated RF power detector • 5 .0 Volt, -0.7 Volt, 480mA operation App lications • Microwave Radio systems Satellite VSAT and DBS systems • L MDS & Pt-Pt mmW Long Haul • 802.16 & 802.20 WiMax BWA • WLL and MMDS loops • Commercial grade military • Can be driver amplifier for the AMMC-64xx p ower amplifiers Description The AMMC-6 345 MMIC is a broadband medium power.


Hewlett-Packard AMMC-6345

amplifier designed for use in driving s tage for transmitters that operate in v arious frequency bands between 20GHz an d 45GHz. It can be attached to the driv ing stage of the AMMC-6425, 6430, and 6 440 (18-27 GHz, 25-32GHz, and 37-42GHz) 1W MMIC power amplifiersluding requiri ng linear operation. At 40GHz, it provi des 24dBm of output power (P-1dB), 20dB of gain, and a 32.


Hewlett-Packard AMMC-6345

dBm output third order intercept (OIP3 ). The device has input and output matc hing circuitry for use in 50 Ω enviro nments. The AMMC-6345 integrates a temp erature compensated RF power detection circuit that enables power detection of 0.8V/W at 40GHz. The device operates o n 5V for current DataSheet4U.com supply (negative voltage only needed for Vg). It is fabricated in.





Part

AMMC-6345

Description

20 - 45 GHz Driver Amplifier



Feature


www.DataSheet4U.com Agilent AMMC-6345 2 0 – 45 GHz Driver Amplifier Data Shee t Features Chip Size: 2500 x 1150 mm ( 100 x 69 mils) Chip Size Tolerance: ± 10mm (±0.4 mils) Chip Thickness: 100 10mm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 mm (4 ± 0.4 mils) • Wide frequency range: 20 - 45 GHz • High g ain: 20 dB • Power: @40 GHz, P-1dB=24 dBm • Highly linear: OIP3=32dB.
Manufacture

Hewlett-Packard

Datasheet
Download AMMC-6345 Datasheet




 AMMC-6345
www.DataSheet4U.com
Agilent AMMC-6345
20 – 45 GHz Driver Amplifier
Data Sheet
Description
The AMMC-6345 MMIC is a
broadband medium power
amplifier designed for use in
driving stage for transmitters
that operate in various
frequency bands between
20GHz and 45GHz. It can be
attached to the driving stage of
the AMMC-6425, 6430, and
6440 (18-27 GHz, 25-32GHz,
and 37-42GHz) 1W MMIC
power amplifiersluding
requiring linear operation. At
40GHz, it provides 24dBm of
output power (P-1dB), 20dB of
gain, and a 32 dBm output
Chip Size: 2500 x 1150 mm (100 x 69 mils)
Chip Size Tolerance: ± 10mm (±0.4 mils)
Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)
Pad Dimensions: 100 x 100 mm (4 ± 0.4 mils)
third order intercept (OIP3).
The device has input and
output matching circuitry for
use in 50 environments.
The AMMC-6345 integrates a
temperature compensated RF
power detection circuit that
enables power detection of
0.8V/W at 40GHz. The device
osuppepralyteD(snaoetngaaS5thiVveeefotv4roUcl.tcuaorgmreenont ly
needed for Vg). It is fabricated
in a PHEMT process for
exceptional power and gain
performance.
Features
Wide frequency range: 20 - 45 GHz
High gain: 20 dB
Power: @40 GHz, P-1dB=24 dBm
Highly linear: OIP3=32dBm
Integrated RF power detector
5.0 Volt, -0.7 Volt, 480mA
operation
Applications
Microwave Radio systems
Satellite VSAT and DBS systems
LMDS & Pt-Pt mmW Long Haul
802.16 & 802.20 WiMax BWA
WLL and MMDS loops
Commercial grade military
Can be driver amplifier for the
AMMC-64xx power amplifiers
AMMC-6345 Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions Units
Min.
Vd
Positive Drain Voltage
V
Vg
Gate Supply Voltage
V
-3
Id
Drain Current
mA
Pin
CW Input Power
dBm
Tch Operating Channel Temp. °C
Tstg
Storage Case Temp.
°C
-65
Tmax Maximum Assembly Temp °C
(60 sec max)
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Max.
7
0.5
700
23
+150
+150
+300
DataSheet4U.com
Note: These devices are ESD sensitive. The following precautions are strongly recommended.
Ensure that an ESD approved carrier is used when dice are transported from one destination to
another. Personal grounding is to be worn at all times when handling these devices
DataShee




 AMMC-6345
www.DataSheet4U.com
AMMC-6345 DC Specifications/Physical Properties [1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id Drain Supply Current
mA
(under any RF power drive and temperature)
(Vd=5.0 V, Vg set for Id Typical)
480 600
Vg Gate Supply Operating Voltage
(Id(Q) = 900 (mA))
V -0.75 -0.55 -0.4
θch-b Thermal Resistance[2]
(Backside temperature, Tb = 25°C))
°C/W
8.2
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 9.0°C/W at Tchannel (Tc) = 70°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
et4U.com
AMMC-6345 RF Specifications [3, 4, 5]( TA= 25°C, Vd=5V, Id(Q)=480 mA, Zo=50 )
Parameters and Test
Symbol Conditions
Units Minimum Typical
Gain Small-signal Gain[4]
dB 18
20
P-1dB Output Power at 1dB dBm 22.5
Gain Compression
24
P-3dB Output Power at 3dB
Gain Compression
OIP3 Third Order Intercept
Point; f=100MHz;
Pin=-20dBm
dBm 25
dBm DataSheet4U3.c2om
RLin Input Return Loss[4]
dB
-17
RLout Output Return Loss[4]
dB
-13
Isolation Min. Reverse Isolation dB
-40
Maximum
Sigma
0.28
0.20
0.17
0.8
0.92
0.63
1.30
Notes:
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency = 25, 30, and 38 GHz. Statistics based on 1500 part sample
5. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more
narrow bandwidth by application of additional conjugate, linearity, or power matching.
DataShee
LSL LSL LSL
18 19 20
22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4
23 24
Gain at 30 GHz
P-1dB at 30 GHz
P-1dB at 38 GHz
Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled
DataSheet4U.coovmer several production lots.
2




 AMMC-6345
www.DataSheet4U.com
et4U.com
AMMC-6345 Typical Performances (TA = 25°C, Vd =5.0 V, ID = 480 mA, Zin = Zout = 50 )
NOTE: These measurements are in a 50 test environment. Aspects of the amplifier performance may be improved over
a more narrow bandwidth by application of additional conjugate, linearity, or power matching.
30
Vd=3V
25
20 Vd=5V
-20 0
-25 -5
-30 -10
30
P-1(5V)
P-1(4V)
P-1(3V)
25
15 -35 -15
20
10
5 Isolation
-40
-45
0 -50
15 20 25 30 35 40 45 50
Frequency [GHz]
Figure 1. Typical Gain and Reverse Isolation at
Vd= 3V, 4V, and 5V
-20
15
-25
-30
15 20 25 30 35 40 45
Frequency [GHz]
Figure 2. Typical Return Loss (Input and
Output) at Vd= 3V, 4V, and 5V
10
50
15 20 25 30 35 40 45 50
Frequency [GHz]
Figure 3. Typical Output Power (@P-1dB) and
PAE at Vd= 3V, 4V, and 5V
12
10
8
6
4
2
0
15 20 25 30 35
Frequency [GHz]
Figure 4. Typical Noise Figure
0
-5
40 45
S11_20
S11_-40
S11_85
40
38
36
34
32
30
28 DataSheet4U.com
26
24
22
20
15 20 25 30 35 40 45
Frequency [GHz]
Figure 5. Typical Output 3rd Order Intercept Pt.
0
S22_20
S22_-40
S22_85
-5
30 Pout
PAE
Id
25
700
600
20 500
15 400
10 300
5 200
0
-20 -10
0
10
Pin [dBm]
100
20
Figure 6. Typical Output Power, PAE, and Total
Drain Current versus Input Power at30GHz
30
25
DataShee
-10 -10
20
-15
-15
-20
-20
-25
15 20 25 30 35 40 45 50
-25
Frequency[GHz]
15 20 25 30 35
Frequency [GHz]
Figure 7. Typical S11 over temperature
Figure 8. Typical S22 over temperature
15
10
S21_20
S21_-40
S21_85
5
40 15 20 25 30 35 40 45 50
Frequency[GHz]
Figure 9. Typical Gain over temperature
DataSheet4U.com
3




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