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NPN Transistor. 2SC5848 Datasheet

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NPN Transistor. 2SC5848 Datasheet
















2SC5848 Transistor. Datasheet pdf. Equivalent













Part

2SC5848

Description

Silicon NPN Transistor



Feature


Transistors 2SC5848 Silicon NPN epitaxi al planar type For general amplificat ion Complementary to 2SA2079 Unit: mm  Features 3 2 0.60±0.05  Hi gh forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for ult raminiature leadless package 1 1.00±0 .05 0.39+−00..0013 0.15±0.05 0.05 0.03 0.35±0.01 Package: 0.6 mm.
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SC5848 Datasheet


Panasonic Semiconductor 2SC5848

2SC5848; × 1.0 mm (hight 0.39 mm) /  Absolut e Maximum Ratings Ta = 25°C 0.50±0.0 5 0.25±0.05 0.25±0.05 1 Parameter e ) Collector-base voltage (Emitter ope n) c type Collector-emitter voltage (Ba se open) n d tage. ued Emitter-base vol tage (Collector open) le s ontin Collec tor current a elifecyc disc Peak collec tor current n u t ed, Collector power d issipation roduc d typ Ju.


Panasonic Semiconductor 2SC5848

nction temperature te tin ur P tinue Sto ragetemperature Symbol Rating Unit V CBO 60 V VCEO 50 V VEBO 7 V IC 100 mA ICP 200 mA PC 100 mW T j 125 °C Tstg –55 to +125 °C 3 2 0.65±0.01 0.05±0.03 1: Base 2: Emitter 3: Collector Marking Symbol : 3 E ML3-N2 Package in n followingefdodi scon  Electrical Characteristics Ta = 25°C±3°C es plan Parame.


Panasonic Semiconductor 2SC5848

ter Symbol Conditions Min Typ Max Uni t a o includ type, Collector-base volt age (Emitter open) VCBO IC = 10 µA, I E = 0 60 V c ued nce Collector-emitt er voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V M is ntin tena Emitter- base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V isco ain Collec tor-base cutoff current (Emitter open) ICBO VCB = 20 V, IE .





Part

2SC5848

Description

Silicon NPN Transistor



Feature


Transistors 2SC5848 Silicon NPN epitaxi al planar type For general amplificat ion Complementary to 2SA2079 Unit: mm  Features 3 2 0.60±0.05  Hi gh forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for ult raminiature leadless package 1 1.00±0 .05 0.39+−00..0013 0.15±0.05 0.05 0.03 0.35±0.01 Package: 0.6 mm.
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SC5848 Datasheet




 2SC5848
Transistors
2SC5848
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2079
Unit: mm
Features
3
2
High forward current transfer ratio hFE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
1
1.00±0.05
0.39+−00..0013
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
/ Absolute Maximum Ratings Ta = 25°C
0.25±0.05
0.25±0.05
1
Parameter
e ) Collector-base voltage (Emitter open)
c type Collector-emitter voltage (Base open)
n d tage. ued Emitter-base voltage (Collector open)
le s ontin Collector current
a elifecyc disc Peak collector current
n u t ed, Collector power dissipation
roduc d typ Junction temperature
te tin ur P tinue Storagetemperature
Symbol Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
100
mA
ICP
200
mA
PC
100
mW
Tj
125
°C
Tstg 55 to +125 °C
3
2
0.65±0.01
0.05±0.03
1: Base
2: Emitter
3: Collector
Marking Symbol : 3E
ML3-N2 Package
in n followingefdodiscon Electrical Characteristics Ta = 25°C±3°C
es plan Parameter
Symbol
Conditions
Min Typ Max Unit
a o includ type, Collector-base voltage (Emitter open)
VCBO IC = 10 µA, IE = 0
60
V
c ued nce Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
V
M is ntin tena Emitter-base voltage (Collector open)
VEBO IE = 10 µA, IC = 0
7
V
isco ain Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
µA
e/D e, m Collector-emitter cut-off current (Base open) ICEO VCE = 10 V, IB = 0
100
µA
D nanc e typ Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
180
390
inte anc Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.3
V
Ma inten Transition frequency
fT VCB = 10 V, IE = –2 mA, f = 200 MHz
100
MHz
ma Collector output capacitance
ed (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
2.2
pF
(plan Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : December 2004
SJC00327AED
1




 2SC5848
2SC5848
2SC5848_ PC-Ta
PC Ta
120
100
80
60
40
2SC5848_IC-VCE
IC VCE
50
Ta = 25°C
IB = 160 µA
40
140 µA
120 µA
30
100 µA
20
80 µA
60 µA
2SC5848_IC-IB
IC IB
140
VCE = 10 V
120 Ta = 25°C
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
10
40 µA
20 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
20
0
0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA)
/ 2SC5848_IB-VBE
2SC5848_IC-VBE
2SC5848_VCE(sat)-IC
e IB VBE
pe) 3.5
c ty VCE = 10 V
n d ge. ed 3.0 Ta = 25°C
le sta ontinu 2.5
a elifecyc , disc 2.0
n u duct typed 1.5
te tin urProtinued 1.0
ing fo iscon 0.5
in n follow nedd 0
s la 0
0.2
0.4
0.6
0.8
a o lude e, p Base-emitter voltage VBE (V)
c d inc e typ 2SC5848_hFE-IC
ue nc hFE IC
M is ntin tena 350
co in Ta = 75°C
VCE = 10 V
/Dis ma 300
, 25°C
D ance type 250
ten ce –25°C
in an 200
Ma ainten 150
ed m 100
(plan 50
IC VBE
120
VCE = 10V
100
80
Ta = 75°C
–25°C
60
25°C
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
2SC5848_Cob-VCB
Cob VCB
10
f = 1 MHz
Ta = 25°C
VCE(sat) IC
1
IC / IB = 10
0.1
25°C
Ta = 75°C
–25°C
0.01
1
10
100
Collector current IC (mA)
0
1
10
100
1 000
Collector current IC (mA)
1
0
8
16 24 32 40
Collector-base voltage VCB (V)
2
SJC00327AED




 2SC5848
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
/ Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
e ) (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
pe maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
c ty defect which may arise later in your equipment.
n d ge. ed Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
sta tinu mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
le n or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
a elifecyc disco (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
d, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
n u duct type damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
te tin Pro ued (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Ma(pDlaneiMdanminaitiensnteannacnecc/Deitsycpooen,timnuaeindnteinncalnucdeestyfpoell,opwlianngefdoudriscontin Electric Industrial Co., Ltd.




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