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Switching Applications. 2SJ608 Datasheet

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Switching Applications. 2SJ608 Datasheet
















2SJ608 Applications. Datasheet pdf. Equivalent













Part

2SJ608

Description

Ultrahigh Speed Switching Applications



Feature


www.DataSheet4U.com w ww.DataSheet4U.com Ordering number : ENN6995 2SJ608 P-Ch annel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features • • • • Package Dimensions unit : mm 2085A [2SJ608] 10.5 1.9 4.5 1 .2 Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. 2.6 1.4 1.2 7.5 1.0 8.5 1.6.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SJ608 Datasheet


Sanyo Semicon Device 2SJ608

2SJ608; 0.5 0.5 Specifications Absolute Maxim um Ratings at Ta=25°C Parameter Drain- to-Source Voltage Gate-to-Source Voltag e Drain Current (DC) Drain Current (Pul se) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µ s, duty cycle≤1% 1 : Source 2 : Drai n 3 : Gate 2.5 2.5 SANYO : FLP Ratings -30 ± 20 --4 -16 1.4 15.


Sanyo Semicon Device 2SJ608

0 --55 to +150 Unit V V A A W °C °C C onditions www.DataSheet4U.com Electric al Characteristics at Ta=25°C Paramete r Drain-to-Source Breakdown Voltage Zer o-Gate Voltage Drain Current Gate-to-So urce Leakage Current Cutoff Voltage For ward Transfer Admittance Symbol V(BR)DS S IDSS IGSS VGS(off) yfs Conditio ns ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS= ± 16V, VDS=0 VDS=-10V, ID.


Sanyo Semicon Device 2SJ608

=--1mA VDS=-10V, ID=--2A Ratings min --3 0 --1 ± 10 --1.0 2.9 4.2 --2.4 typ max Unit V µA µA V S Continued on next page. Any and all SANYO products descr ibed or contained herein do not have sp ecifications that can handle applicatio ns that require extremely high levels o f reliability, such as life-support sys tems, aircraft's control systems, or ot her applications whos.





Part

2SJ608

Description

Ultrahigh Speed Switching Applications



Feature


www.DataSheet4U.com w ww.DataSheet4U.com Ordering number : ENN6995 2SJ608 P-Ch annel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features • • • • Package Dimensions unit : mm 2085A [2SJ608] 10.5 1.9 4.5 1 .2 Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. 2.6 1.4 1.2 7.5 1.0 8.5 1.6.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SJ608 Datasheet




 2SJ608
wwwww.D. DataSt aheSeht4eUe.cto4mU . c o m
Ordering number : ENN6995
Features
Low ON-resistance.
Ultrahigh speed switching.
Low-voltage drive.
Mounting height 9.5mm.
Meets radial taping.
2SJ608
P-Channel Silicon MOSFET
2SJ608
Ultrahigh Speed Switching Applications
Package Dimensions
unit : mm
2085A
[2SJ608]
4.5
10.5
1.9
1.2
2.6
1.4
1.2
1.6
0.5
123
0.5
Specifications
Absolute Maximum Ratings at Ta=25°C
2.5 2.5
1 : Source
2 : Drain
3 : Gate
SANYO : FLP
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol www.DataSheCeontd4itiUon.scom
VDSS
VGSS
ID
IDP
PD
Tch
PW10µs, duty cycle1%
Tstg
Electrical Characteristics at Ta=25°C
Ratings
--30
±20
--4
--16
1.4
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
min
--30
--1.0
2.9
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.4 V
4.2 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62501 TS IM TA-2989 No.6995-1/4
wwwww.D. DataSt aheSeht4eUe.cto4mU . c o m




 2SJ608
www.DataSheet4U.com
2SJ608
Continued from preceding page.
Parameter
Symbol
Conditions
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on) 1
RDS(on) 2
RDS(on) 3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
ID=--1A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
IS=--4A, VGS=0
Ratings
min typ max
Unit
60 78 m
90 126 m
100 140 m
560 pF
150 pF
95 pF
9 ns
4 ns
70 ns
55 ns
12 nC
2 nC
2 nC
--0.88
--1.5 V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --15V
ID= --2A
RL=7.5
D VOUT
P.G 50
2SJ608
S
www.DataSheet4U.com
ID -- VDS
--6
--5 --3.5V
ID -- VGS
--9
VDS= --10V
--8
--3.0V
--7
--4 --6
--5
--3
--4
--2.5V
--2 --3
--1
VGS= --2.0V
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT02844
RDS(on) -- VGS
200
Ta=25°C
--2
--1
0
0
200
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT02845
150
--2.0A
100 ID= --1.0A
50
150
100
I
D=
--1.0A,
V
I
GS= --4.0V
D= --1.0A, V
GS=
--4.5V
ID= --2.0A, VGS= --10.0V
50
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V IT02846
www.DataSheet4U.com
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02847
No.6995-2/4




 2SJ608
www.DataSheet4U.com
2SJ608
yfs-- ID
100
7 VDS= --10V
5
3
2
10
7
5
3
2
Ta= --25°C
1.0 25°C
7
5
75°C
3
2
0.1
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
IT02848
SW Time -- ID
1000
7 VDD= --15V
5 VGS= --10V
3
2
100 td(off)
7
5
tf
3
2
10 td(on)
7
5 tr
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
0
1000
7
5
3
2
100
7
5
3
2
IF -- VSD
VGS=0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Diode Forward Voltage, VSD -- V IT02849
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
1.0
--0.1
--12
--10
--8
--6
--4
--2
0
0
2.0
10
2
3
5 7 --1.0
23
Drain Current, ID -- A
ww5 wIT70.2D85--01a0taSheet4U.c0om
--5 --10 --15
Drain-to-Source Voltage, VDS -- V
--20
IT02851
VGS -- Qg
VDS= --10V
3
2 IDP= --16A
ASO
<10µs
ID= --4A
--10
7
5
ID= --4A
3
2
1001m0sm1sm1s00µs
--1.0
7
5
3
2 Operation in this
DC operation
--0.1 area is limited by RDS(on).
7
5
2 4 6 8 10 12 14
Total Gate Charge, Qg -- nC
PD -- Ta
IT02852
3
2 Ta=25°C
--0.01 Single pulse
--0.1 2 3 5
7 --1.0
23
5 7 --10
23 5
Drain-to-Source Voltage, VDS -- V IT03270
1.5
1.4
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03271
www.DataSheet4U.com
No.6995-3/4




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