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1N649UR-1 Datasheet, Equivalent, SILICON RECTIFIER.

SILICON RECTIFIER

SILICON RECTIFIER

 

 

 

Part 1N649UR-1
Description SILICON RECTIFIER
Feature FEATURES 1N649UR-1
• 1N649UR-1 AVAIL ABLE IN JAN, JANTX, AND JANTXV PER MIL- PRF




• RECTIFIER METALL URGICALLY BONDED HERMETICALLY SEALED DO UBLE PLUG CONSTRUCTION ALSO AVAILABLE A S LL649, & MLL649 19500/240 SILICON MA XIMUM RATINGS AT 25 °C Operating Tempe rature: Storage Temperature: Surge Curr ent A, sine 8.
3mS: Total Power Dissipat ion: Operating Current: -65°C to +175 C -65°C to +175°C 5.
0A 500mW 400mA, TA= +25°C Operating Current: Derating Factor: Derating Factor: D.
C.
Reverse Voltage (VRWM): 150mA, TA= +150°C 2mA /°C above +25°C 6mA/°C above +150°C 600V DC ELECTRICAL CHARACTERISTICS .
Manufacture Microsemi Corporation
Datasheet
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Part 1N649UR-1
Description SILICON RECTIFIER
Feature FEATURES 1N649UR-1
• 1N649UR-1 AVAIL ABLE IN JAN, JANTX, AND JANTXV PER MIL- PRF




• RECTIFIER METALL URGICALLY BONDED HERMETICALLY SEALED DO UBLE PLUG CONSTRUCTION ALSO AVAILABLE A S LL649, & MLL649 19500/240 SILICON MA XIMUM RATINGS AT 25 °C Operating Tempe rature: Storage Temperature: Surge Curr ent A, sine 8.
3mS: Total Power Dissipat ion: Operating Current: -65°C to +175 C -65°C to +175°C 5.
0A 500mW 400mA, TA= +25°C Operating Current: Derating Factor: Derating Factor: D.
C.
Reverse Voltage (VRWM): 150mA, TA= +150°C 2mA /°C above +25°C 6mA/°C above +150°C 600V DC ELECTRICAL CHARACTERISTICS .
Manufacture Microsemi Corporation
Datasheet
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1N649UR-1

1N649UR-1
1N649UR-1

1N649UR-1

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