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FDZ291P Datasheet, Equivalent, BGA MOSFET.

P-Channel 1.5 V Specified PowerTrench BGA MOSFET

P-Channel 1.5 V Specified PowerTrench BGA MOSFET

 

 

 

Part FDZ291P
Description P-Channel 1.5 V Specified PowerTrench BGA MOSFET
Feature FDZ291P P-Channel 1.
5 V Specified PowerT rench® BGA MOSFET February 2006 FDZ2 91P P-Channel 1.
5 V Specified PowerTren ch® BGA MOSFET General Description Com bining Fairchild’s advanced 1.
5V spec ified PowerTrench process with state of the art BGA packaging, the FDZ291P min imizes both PCB space and RDS(ON).
This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal tra nsfer characteristics, high current han dling capability, ultralow profile pack aging, low gate charge, and low RDS(ON) .
Features
• –4.
6 A, –20 V RDS(O N) = 40 mΩ @ VGS = –4.
5 .
Manufacture Fairchild Semiconductor
Datasheet
Download FDZ291P Datasheet
Part FDZ291P
Description P-Channel 1.5 V Specified PowerTrench BGA MOSFET
Feature FDZ291P P-Channel 1.
5 V Specified PowerT rench® BGA MOSFET February 2006 FDZ2 91P P-Channel 1.
5 V Specified PowerTren ch® BGA MOSFET General Description Com bining Fairchild’s advanced 1.
5V spec ified PowerTrench process with state of the art BGA packaging, the FDZ291P min imizes both PCB space and RDS(ON).
This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal tra nsfer characteristics, high current han dling capability, ultralow profile pack aging, low gate charge, and low RDS(ON) .
Features
• –4.
6 A, –20 V RDS(O N) = 40 mΩ @ VGS = –4.
5 .
Manufacture Fairchild Semiconductor
Datasheet
Download FDZ291P Datasheet

FDZ291P

FDZ291P
FDZ291P

FDZ291P

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