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AO4600 Datasheet, Equivalent, MOSFET.MOSFET MOSFET |
 
 
 
Part | AO4600 |
---|---|
Description | MOSFET |
Feature | AO4600 Complementary Enhancement Mode Fi eld Effect Transistor
General Descripti on
The AO4600 uses advanced trench tech nology to provide excellent R DS(ON) an d low gate charge. The complementary MO SFETs form a high-speed power inverter, suitable for a multitude of applicatio ns. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green Product ordering op tion. AO4600 and AO4600L are electrical ly identical. Features n-channel p-cha nnel -30V VDS (V) = 30V ID = 6. 9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mâ„ ¦ < 49mΩ (VGS =- 10V) < 32mΩ < 64mâ „¦ (VGS =- 4. 5V) < 50m . |
Manufacture | Alpha & Omega Semiconductors |
Datasheet |
Part | AO4600 |
---|---|
Description | MOSFET |
Feature | AO4600 Complementary Enhancement Mode Fi eld Effect Transistor
General Descripti on
The AO4600 uses advanced trench tech nology to provide excellent R DS(ON) an d low gate charge. The complementary MO SFETs form a high-speed power inverter, suitable for a multitude of applicatio ns. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green Product ordering op tion. AO4600 and AO4600L are electrical ly identical. Features n-channel p-cha nnel -30V VDS (V) = 30V ID = 6. 9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mâ„ ¦ < 49mΩ (VGS =- 10V) < 32mΩ < 64mâ „¦ (VGS =- 4. 5V) < 50m . |
Manufacture | Alpha & Omega Semiconductors |
Datasheet |
 
 
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