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2SK3562 Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part 2SK3562
Description N-Channel MOSFET
Feature 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2 SK3562 Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 0.
9 Ω (typ.
)
• High forwa rd transfer admittance: |Yfs| = 5.
0 S ( typ.
)
• Low leakage current: IDSS = 1 00 μA (max) (VDS = 600 V)
• Enhancem ent mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maxim um Ratings (Ta = 25°C) Characteristic s Symbol Rating Unit Drain-source v oltage Drain-gate voltage (RGS = 20 k ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3562 Datasheet
Part 2SK3562
Description N-Channel MOSFET
Feature 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2 SK3562 Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 0.
9 Ω (typ.
)
• High forwa rd transfer admittance: |Yfs| = 5.
0 S ( typ.
)
• Low leakage current: IDSS = 1 00 μA (max) (VDS = 600 V)
• Enhancem ent mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maxim um Ratings (Ta = 25°C) Characteristic s Symbol Rating Unit Drain-source v oltage Drain-gate voltage (RGS = 20 k ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3562 Datasheet

2SK3562

2SK3562
2SK3562

2SK3562

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