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2SJ625 Datasheet, Equivalent, EFFECT TRANSISTOR.

MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR

 

 

 

Part 2SJ625
Description MOS FIELD EFFECT TRANSISTOR
Feature DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ625 P-CHANNEL MOS FIELD EFFECT TRAN SISTOR FOR SWITCHING DESCRIPTION The 2 SJ625 is a switching device which can b e driven directly by a 1.
8 V power sour ce.
This device features a low on-state resistance and excellent switching cha racteristics, and is suitable for appli cations such as power switch of portabl e machine and so on.
PACKAGE DRAWING ( Unit: mm) 0.
4 +0.
1 –0.
05 0.
65–0.
15 +0.
1 0.
16+0.
1 –0.
06 2.
8 ±0.
2 3 1 .
5 0 to 0.
1 1 2 FEATURES
• 1.
8 V dr ive available
• Low on-state resistan ce RDS(on)1 = 113 mΩ MAX.
(VGS = –4 .
5 V, ID = –1.
5 A) RDS(on)2 = .
Manufacture NEC
Datasheet
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Part 2SJ625
Description MOS FIELD EFFECT TRANSISTOR
Feature DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ625 P-CHANNEL MOS FIELD EFFECT TRAN SISTOR FOR SWITCHING DESCRIPTION The 2 SJ625 is a switching device which can b e driven directly by a 1.
8 V power sour ce.
This device features a low on-state resistance and excellent switching cha racteristics, and is suitable for appli cations such as power switch of portabl e machine and so on.
PACKAGE DRAWING ( Unit: mm) 0.
4 +0.
1 –0.
05 0.
65–0.
15 +0.
1 0.
16+0.
1 –0.
06 2.
8 ±0.
2 3 1 .
5 0 to 0.
1 1 2 FEATURES
• 1.
8 V dr ive available
• Low on-state resistan ce RDS(on)1 = 113 mΩ MAX.
(VGS = –4 .
5 V, ID = –1.
5 A) RDS(on)2 = .
Manufacture NEC
Datasheet
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2SJ625

2SJ625
2SJ625

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