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2SJ626 Datasheet, Equivalent, EFFECT TRANSISTOR.

MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR

 

 

 

Part 2SJ626
Description MOS FIELD EFFECT TRANSISTOR
Feature DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRAN SISTOR FOR SWITCHING DESCRIPTION The 2 SJ626 is a switching device which can b e driven directly by a 4.
0 V power sour ce.
The 2SJ626 features a low on-state resistance and excellent switching char acteristics, and is suitable for applic ations such as power switch of portable machine and so on.
PACKAGE DRAWING (U nit: mm) 0.
4 +0.
1 –0.
05 0.
65–0.
15 + 0.
1 0.
16+0.
1 –0.
06 2.
8 ±0.
2 3 1.
5 FEATURES
• 4.
0 V drive available Low on-state resistance RDS(on)1 = 3 88 mΩ MAX.
(VGS = –10 V, ID = –1.
0 A) RDS(on)2 = 514 mΩ MAX.
(VG .
Manufacture NEC
Datasheet
Download 2SJ626 Datasheet
Part 2SJ626
Description MOS FIELD EFFECT TRANSISTOR
Feature DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRAN SISTOR FOR SWITCHING DESCRIPTION The 2 SJ626 is a switching device which can b e driven directly by a 4.
0 V power sour ce.
The 2SJ626 features a low on-state resistance and excellent switching char acteristics, and is suitable for applic ations such as power switch of portable machine and so on.
PACKAGE DRAWING (U nit: mm) 0.
4 +0.
1 –0.
05 0.
65–0.
15 + 0.
1 0.
16+0.
1 –0.
06 2.
8 ±0.
2 3 1.
5 FEATURES
• 4.
0 V drive available Low on-state resistance RDS(on)1 = 3 88 mΩ MAX.
(VGS = –10 V, ID = –1.
0 A) RDS(on)2 = 514 mΩ MAX.
(VG .
Manufacture NEC
Datasheet
Download 2SJ626 Datasheet

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