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2SC5635 Datasheet, Equivalent, NPN Transistor.

Silicon NPN Transistor

Silicon NPN Transistor

 

 

 

Part 2SC5635
Description Silicon NPN Transistor
Feature :mm 2.
1 0.
425 1.
25 0.
425 1 2 3 www.
DataSheet4U.
com 1 2 3 JEITA:SC-70 VC BO VCEO VEBO IC PC Tj Tstg 15 6 1.
5 50 125 +125 -55~+125 V V V mA mW I I C BO EBO VCB =10V, I E =0mA VEB =1V, I C =0mA VCE =5V, I C=10mA VCE =5V, I E =10 mA VCB =5V, I E =0mA, f =1MHz 2 1.
0 1.
0 50 5.
0 9.
0 8.
0 1.
0 12.
0 1.
4 250 GHz p F dB dB hFE fT C ob S21 NF VCE =5V, I C=10mA, f =1GHz VCE =5V, I C=5mA, f =1 GHz DC FORWARD CURRENT GAIN VS.
COLLEC TOR CURRENT GAIN BANDWIDTH PRODUCT VS.
COLLECTOR CURRENT COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) POWE R GAIN VS.
COLLECTOR CURRENT POWER GAI N VS.
COLLECTO .
Manufacture Isahaya Electronics
Datasheet
Download 2SC5635 Datasheet
Part 2SC5635
Description Silicon NPN Transistor
Feature :mm 2.
1 0.
425 1.
25 0.
425 1 2 3 www.
DataSheet4U.
com 1 2 3 JEITA:SC-70 VC BO VCEO VEBO IC PC Tj Tstg 15 6 1.
5 50 125 +125 -55~+125 V V V mA mW I I C BO EBO VCB =10V, I E =0mA VEB =1V, I C =0mA VCE =5V, I C=10mA VCE =5V, I E =10 mA VCB =5V, I E =0mA, f =1MHz 2 1.
0 1.
0 50 5.
0 9.
0 8.
0 1.
0 12.
0 1.
4 250 GHz p F dB dB hFE fT C ob S21 NF VCE =5V, I C=10mA, f =1GHz VCE =5V, I C=5mA, f =1 GHz DC FORWARD CURRENT GAIN VS.
COLLEC TOR CURRENT GAIN BANDWIDTH PRODUCT VS.
COLLECTOR CURRENT COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) POWE R GAIN VS.
COLLECTOR CURRENT POWER GAI N VS.
COLLECTO .
Manufacture Isahaya Electronics
Datasheet
Download 2SC5635 Datasheet

2SC5635

2SC5635
2SC5635

2SC5635

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