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2SC5639 Datasheet, Equivalent, Silicon Transistor.

NPN Triple Diffused Planar Silicon Transistor

NPN Triple Diffused Planar Silicon Transistor

 

 

 

Part 2SC5639
Description NPN Triple Diffused Planar Silicon Transistor
Feature Ordering number:ENN6467 NPN Triple Diff used Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horiz ontal Deflection Output Applications Fe atures · High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP pro cess).
· Adoption of MBIT process.
Pa ckage Dimensions unit:mm 2174 [2SC5639] 16.
0 5.
0 3.
4 5.
6 3.
1 0.
8 22.
0 21.
0 4 .
0 2.
8 2.
0 0.
7 1 2 5.
45 3.
5 3 20.
4 0.
9 Specifications Absolute Maximum Ratin gs at Ta = 25˚C Parameter www.
DataShee t4U.
com 5.
45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Symbol VCB O VCEO VEBO IC ICP .
Manufacture Sanyo Semicon Device
Datasheet
Download 2SC5639 Datasheet
Part 2SC5639
Description NPN Triple Diffused Planar Silicon Transistor
Feature Ordering number:ENN6467 NPN Triple Diff used Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horiz ontal Deflection Output Applications Fe atures · High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP pro cess).
· Adoption of MBIT process.
Pa ckage Dimensions unit:mm 2174 [2SC5639] 16.
0 5.
0 3.
4 5.
6 3.
1 0.
8 22.
0 21.
0 4 .
0 2.
8 2.
0 0.
7 1 2 5.
45 3.
5 3 20.
4 0.
9 Specifications Absolute Maximum Ratin gs at Ta = 25˚C Parameter www.
DataShee t4U.
com 5.
45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Symbol VCB O VCEO VEBO IC ICP .
Manufacture Sanyo Semicon Device
Datasheet
Download 2SC5639 Datasheet

2SC5639

2SC5639
2SC5639

2SC5639

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