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Barrier Diode. CDBU001A Datasheet

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Barrier Diode. CDBU001A Datasheet






CDBU001A Diode. Datasheet pdf. Equivalent




CDBU001A Diode. Datasheet pdf. Equivalent





Part

CDBU001A

Description

SMD Schottky Barrier Diode



Feature


SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBU001A Io = 100mA V R = 30 Volt s Features Designed for m ounting on small surface Extremely thin package Low stored charge Majority car rier conduction Preliminary 0603(1608 ) 0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80) Mechanical data Case: 0603 ( 1608 ) Standard package, molded plas tic Terminals: Sol.
Manufacture

Comchip Technology

Datasheet
Download CDBU001A Datasheet


Comchip Technology CDBU001A

CDBU001A; der plated, solderable per MIL-STD-750, method 2026 Polarity: Indicated by cath ode band 0.012 (0.30) Typ. 0.014(0.35) Typ. 0.033(0.85) 0.027(0.70) Mounting position: Any 0.018(0.45) Typ. www.Dat aSheet4U.com Weight: 0.003 gram (appro ximately) Dimensions in inches and (mil limeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Re petitive peak reve.


Comchip Technology CDBU001A

rse voltage Average forward current Forw ard current , surge peak Power Dissipat ion Storage temperature Junction temper ature 8.3 ms single half sine-wave supe rimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM, V R IO I FSM PD T STG Tj -40 -40 5 00 150 +125 +125 30 100 V mA mA mW C C Electrical Characteristics ( at TA = 2 5 C unless otherwi.


Comchip Technology CDBU001A

se noted ) Parameter Forward voltage 1 F orward voltage 2 Forward voltage 3 Forw ard voltage 4 Forward voltage 5 Reverse current IF = 1 mA DC IF = 10 mA DC IF = 30 mA DC IF = 100 mA DC V R = 25 V C onditions IF = 0.1 mA DC Symbol Min Ty p Max Unit VF VF VF VF VF IR CT 0.24 0. 32 0.40 0.50 1.00 2 6 V V V V V uA PF Capacitance between terminals F=1MHz an d 10 V DC reverse .

Part

CDBU001A

Description

SMD Schottky Barrier Diode



Feature


SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBU001A Io = 100mA V R = 30 Volt s Features Designed for m ounting on small surface Extremely thin package Low stored charge Majority car rier conduction Preliminary 0603(1608 ) 0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80) Mechanical data Case: 0603 ( 1608 ) Standard package, molded plas tic Terminals: Sol.
Manufacture

Comchip Technology

Datasheet
Download CDBU001A Datasheet




 CDBU001A
SMD Schottky Barrier Diode
CDBU001A
Io = 100mA
VR = 30 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
COMCHIP
SMD Diodes Specialist
Preliminary
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
Case: 0603 ( 1608 ) Standard package,
molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026
0.014(0.35) Typ.
0.033(0.85)
0.027(0.70)
Polarity: Indicated by cathode band
Mounting position: Any
Weight: 0.003 gram (approximately)
www.DataSheet4U.com
0.012 (0.30) Typ.
0.018(0.45) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at TA = 25 C unless otherwise noted )
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
VRRM, VR
30 V
Average forward current
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IO
IFSM
100 mA
500 mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
Tj
-40
-40
150
+125
+125
mW
C
C
Electrical Characteristics ( at TA = 25 C unless otherwise noted )
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage 1
Forward voltage 2
Forward voltage 3
Forward voltage 4
IF = 0.1 mA DC
IF = 1 mA DC
IF = 10 mA DC
IF = 30 mA DC
VF 0.24 V
VF 0.32 V
VF 0.40 V
VF 0.50 V
Forward voltage 5
Reverse current
IF = 100 mA DC
VR = 25 V
VF 1.00 V
IR 2 uA
Capacitance between terminals F=1MHz and 10 V DC reverse voltage
CT
6 PF
QW-A1003
REV:A
Page 1




 CDBU001A
SMD Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBU001A)
Fig. 1 - Forward characteristics
1000
Fig. 2 - Reverse characteristics
1m
100u
125 C
100
10u 75 C
10
1u 25 C
1
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage (V)
100n
0
10 20 30 40
Reverse voltage (V)
50
Fig. 3 - Capacitance between
terminals characteristics
20
f = 1 MHz
Ta = 25 C
10
1
0
5 10 15 20 25 30 35
Reverse voltage (V)
Fig. 4 - Current derating curve
Mounting on glass epoxy PCBs
100
80
60
40
20
0
0
25 50 75 100 125 150
Ambient temperature ( C )
QW-A1003
REV:A
Page 2










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