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Barrier Diode. CDBU0145 Datasheet

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Barrier Diode. CDBU0145 Datasheet






CDBU0145 Diode. Datasheet pdf. Equivalent




CDBU0145 Diode. Datasheet pdf. Equivalent





Part

CDBU0145

Description

SMD Schottky Barrier Diode



Feature


SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBU0145 Io = 100 mA V R = 45 Volt s Features (Lead-free D evice) Designed for mounting on small surface. Extremely thin/leadless packag e. Low leakage current (IR =0.1uA typ. @V R =10V). Majority carrier conduction . 0.039(1.00) 0.031(0.80) 0603(1608) 0 .071(1.80) 0.063(1.60) Mechanical data Case: 0603 (1608).
Manufacture

Comchip Technology

Datasheet
Download CDBU0145 Datasheet


Comchip Technology CDBU0145

CDBU0145; Standard package , molded plastic. 0.01 4(0.35) Typ. 0.033(0.85) 0.027(0.70) T erminals: Gold plated, solderable per M IL-STD-750, method 2026. Polarity: Indi cated by cathode band. Mounting positio n: Any. www.DataSheet4U.com 0.018(0.45) Typ. 0.012 (0.30) Typ. Weight: 0.003 gram (approximately). Dimensions in in ches and (millimeter) Maximum Rating ( at T A = 25 C unl.


Comchip Technology CDBU0145

ess otherwise noted ) Parameter Repetiti ve peak reverse voltage Reverse voltage Average forward current Forward curren t , surge peak Power Dissipation Storag e temperature Junction temperature 8.3 ms single half sine-wave superimposed o n rate load ( JEDEC method ) Condition s Symbol Min Typ Max Unit V RRM VR Io I FSM PD T STG Tj -40 -40 1000 150 +125 +125 50 45 100 V .


Comchip Technology CDBU0145

V mA mA mW C C Electrical Characteristi cs ( at T A = 25 C unless otherwise not ed ) Parameter Forward voltage Reverse current Capacitance between terminals V R = 10 V f = 1MHz, and 10 VDC reverse voltage Conditions I F = 100 mA DC Sy mbol Min Typ Max Unit VF IR CT 9 0.55 1 V uA pF REV:A QW-A1019 Page 1 SMD Schottky Barrier Diode COMCHIP SMD Dio des Specialist RA.

Part

CDBU0145

Description

SMD Schottky Barrier Diode



Feature


SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBU0145 Io = 100 mA V R = 45 Volt s Features (Lead-free D evice) Designed for mounting on small surface. Extremely thin/leadless packag e. Low leakage current (IR =0.1uA typ. @V R =10V). Majority carrier conduction . 0.039(1.00) 0.031(0.80) 0603(1608) 0 .071(1.80) 0.063(1.60) Mechanical data Case: 0603 (1608).
Manufacture

Comchip Technology

Datasheet
Download CDBU0145 Datasheet




 CDBU0145
SMD Schottky Barrier Diode
CDBU0145 (Lead-free Device)
Io = 100 mA
VR = 45 Volt s
Features
COMCHIP
SMD Diodes Specialist
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current (IR=0.1uA typ.
@VR=10V).
Majority carrier conduction.
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
Mechanical data
Case: 0603 (1608) Standard package ,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
www.DataSheet4U.com
Mounting position: Any.
Weight: 0.003 gram (approximately).
0.014(0.35) Typ.
0.033(0.85)
0.027(0.70)
0.012 (0.30) Typ.
0.018(0.45) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
50 V
VR 45 V
Io 100 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
1000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
Tj
-40
-40
150
+125
+125
mW
C
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 100 mADC
Reverse current
VR = 10 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF 0.55 V
IR 1 uA
CT 9 pF
QW-A1019
REV:A
Page 1




 CDBU0145
SMD Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBU0145)
Fig. 1 - Forward characteristics
1000
100
10
1
0.1
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage (V)
0.7
Fig. 2 - Reverse characteristics
10m
1m 125 C
100u 75 C
10u
25 C
1u
100n
10n
1n
0
-25 C
10 20 30
Reverse voltage (V)
40
Fig. 3 - Capacitance between
terminals characteristics
100
f = 1 MHz
Ta = 25 C
10
1
0
5 10 15 20 25 30 35
Reverse voltage (V)
Fig. 4 - Current derating curve
Mounting on glass epoxy PCBs
100
80
60
40
20
0
0
25 50 75 100 125 150
Ambient temperature ( C )
QW-A1019
REV:A
Page 2










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