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Barrier Diode. CDBV130-G Datasheet

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Barrier Diode. CDBV130-G Datasheet






CDBV130-G Diode. Datasheet pdf. Equivalent




CDBV130-G Diode. Datasheet pdf. Equivalent





Part

CDBV130-G

Description

(CDBV120-G - CDBV140-G) SMD Schottky Barrier Diode



Feature


SMD Schottky Barrier Diode SMD Diodes Sp ecialist CDBV120-G THRU. CDBV140-G I O =1.0A V R =20 ~ 40V RoHS Device Featur es -For use in low voltage, high freque ncy inverters. -Free wheeling, and pola rity protection applications. SOD-323 0.071 (1.80) 0.063 (1.60) Mechanical D ata -Case: Molded plastic SOD-323 -Term inals: Solderable per MIL-STD-750, Meth od 2026.1. -Polari.
Manufacture

Comchip Technology

Datasheet
Download CDBV130-G Datasheet


Comchip Technology CDBV130-G

CDBV130-G; ty: Indicated by cathode band. -Mounting position: Any. -Marking: CDBV120-G : S J CDBV130-G : SK CDBV140-G : SL 0.014 (0.35) 0.010 (0.25) 0.106 (2.70) 0.098 (2.50) 0.055 (1.40) 0.047 (1.20) 0.00 6 (0.15) 0.039 (1.00)max 0.003 (0.08) 0.004 (0.10)max 0.019 (0.475)REF. Dim ensions in inches and (millimeter) Max imum Ratings (at T A=25 OC unless other wise specified) Pa.


Comchip Technology CDBV130-G

rameter www.DataSheet4U.com Symbol V RM V RRM V RWM VR V R(RMS) IO I FSM I FRM PD RθJA T STG CDBV120-G 20 20 14 CD BV130-G 30 30 21 1 25 625 200 625 -65~+ 150 CDBV140-G 40 40 28 Unit V V V A A mA mW O Non-repetitive peak reverse v oltage Peak repetitive peak reverse vol tage Working peak reverse voltage DC bl ocking voltage RMS reverse voltage Aver age rectified outpu.


Comchip Technology CDBV130-G

t current Peak forward surge current @Tp =8.3mS Repetitive peak forward current Power dissipation Thermal resistance (j unction to ambient) Storage temperature C/W O C Electrical Characteristics (at T A=25 OC unless otherwise specifie d) Parameter Reverse breakdown voltage I R =1mA V R =20V V R =30V V R =40V I F =1.0A Forward voltage I F =3.0A Diode Capacitance V R =4.

Part

CDBV130-G

Description

(CDBV120-G - CDBV140-G) SMD Schottky Barrier Diode



Feature


SMD Schottky Barrier Diode SMD Diodes Sp ecialist CDBV120-G THRU. CDBV140-G I O =1.0A V R =20 ~ 40V RoHS Device Featur es -For use in low voltage, high freque ncy inverters. -Free wheeling, and pola rity protection applications. SOD-323 0.071 (1.80) 0.063 (1.60) Mechanical D ata -Case: Molded plastic SOD-323 -Term inals: Solderable per MIL-STD-750, Meth od 2026.1. -Polari.
Manufacture

Comchip Technology

Datasheet
Download CDBV130-G Datasheet




 CDBV130-G
SMD Schottky Barrier Diode
CDBV120-G THRU. CDBV140-G
IO=1.0A
VR=20 ~ 40V
RoHS Device
SMD Diodes Specialist
Features
-For use in low voltage, high frequency inverters.
-Free wheeling, and polarity protection applications.
Mechanical Data
-Case: Molded plastic SOD-323
-Terminals: Solderable per MIL-STD-750, Method
2026.1.
-Polarity: Indicated by cathode band.
-Mounting position: Any.
-Marking:
CDBV120-G : SJ
CDBV130-G : SK
CDBV140-G : SL
SOD-323
0.014 (0.35)
0.010 (0.25)
0.071 (1.80)
0.063 (1.60)
0.106 (2.70)
0.098 (2.50)
0.039 (1.00)max
0.004 (0.10)max
0.055 (1.40)
0.047 (1.20)
0.006 (0.15)
0.003 (0.08)
0.019 (0.475)REF.
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25OC unless otherwise specified)
Parameter
Non-repetitive peak reverse voltage
www.DataSheet4U.com
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Peak forward surge current @Tp=8.3mS
Repetitive peak forward current
Power dissipation
Thermal resistance (junction to ambient)
Storage temperature
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IFRM
PD
RθJA
TSTG
CDBV120-G
20
20
14
CDBV130-G
30
30
21
1
25
625
200
625
-65~+150
CDBV140-G
40
40
28
Unit
V
V
V
A
A
mA
mW
OC/W
OC
Electrical Characteristics (at TA=25OC unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse leakage current
Forward voltage
Diode Capacitance
Conditions
IR=1mA
CDBV120-G
CDBV130-G
CDBV140-G
VR=20V
VR=30V
VR=40V
CDBV120-G
CDBV130-G
CDBV140-G
IF=1.0A
CDBV120-G
CDBV130-G
CDBV140-G
IF=3.0A
CDBV120-G
CDBV130-G
CDBV140-G
VR=4V, f=1MHz
Symbol
VBR
IR
VF
VF
CD
Min.
20
30
40
Max.
1
0.45
0.55
0.60
0.75
0.875
0.90
120
QW-BB015
Unit
V
mA
V
V
pF
REV:A
Page 1




 CDBV130-G
SMD Schottky Barrier Diode
SMD Diodes Specialist
ELECTRICAL CHARACTERISTIC CURVES (CDBV120-G thru. CDBV140-G)
Fig.1 Forward Current Derating Curve
1
0 .7 5
0.5
0 .2 5
Resistive or
inductive load
0.375"(9.5mm)
lead length
0
0 20 40 60 80 100 120
VF, Forward Voltage (V)
140
Fig.2 Maximum Non-repetitive Peak
Forward Surge Current
30
25
20
15
10
5
0
1 10 100
Number of Cycles at 60Hz
Fig.3 Typical Instantaneous
Forward Characteristics
50
10 TJ=125OC
Pulse width=300μS
1% duty cycle
TJ=25OC
1.0
0.1
0 .0 1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig.5 Typical Junction Capacitance
1000
TJ=25OC
f=1.0MHz
Vsig=50mVp-p
100
Fig.4 Typical Reverse Characteristics
100
10 TJ=125OC
1
0.1
0 .0 1
TJ=75OC
TJ=25OC
0 .0 0 1
0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig.6 Typical Transient Thermal Impedance
100
10
1
10
0.1 1 10 100
Reverse Voltage (V)
QW-BB015
0.1
0 .0 1
0.1 1 10
t, Pulse Duration (sec)
100
REV:A
Page 2










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