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switching application. GMBD4148 Datasheet

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switching application. GMBD4148 Datasheet






GMBD4148 application. Datasheet pdf. Equivalent




GMBD4148 application. Datasheet pdf. Equivalent





Part

GMBD4148

Description

high-speed switching application



Feature


GMBD4148 Description 1/1 The GMBD4148 is designed for high-speed switching ap plication in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount pa ckage. Package Dimensions Style : Pin 1.Anode 2.NC 3.Cathode REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2 .80 1.40 1.60 0.35.
Manufacture

GTM

Datasheet
Download GMBD4148 Datasheet


GTM GMBD4148

GMBD4148; 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.3 0 0.10 0.20 0.40 0.85 1.15 0 10 www.Da taSheet4U.com Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperat ure Storage Temperature Continuous Reve rse Voltage Continuous Forward Current Peak Forward Surge Current Symbol Tj Ts tg VR IF IFSM Ratings +150 -65~+150 70 200 500 Unit V mA.


GTM GMBD4148

mA Characteristics Characteristic Forw ard Voltage Reverse Breakdown Reverse C urrent Total Capacitance Reverse Recove ry Time at Ta = 25 Symbol VF VR IR CT Trr Min. 100 Max. 1 5 4 4 Unit V V uA p F nS IF=10mA IR=100uA VR=75V VR=0V,F=1M Hz IF=IR=10mA, RL=100 Measured at IR=1m A Test Conditions Important Notice: Al l rights are reserved. Reproduction in whole or in part i.


GTM GMBD4148

s prohibited without the prior written a pproval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use i n life-support Applications, or systems . GTM assumes no liability for any cons equence of customer product design, inf ringement of patents, or application as sistance. Head Off.

Part

GMBD4148

Description

high-speed switching application



Feature


GMBD4148 Description 1/1 The GMBD4148 is designed for high-speed switching ap plication in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount pa ckage. Package Dimensions Style : Pin 1.Anode 2.NC 3.Cathode REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2 .80 1.40 1.60 0.35.
Manufacture

GTM

Datasheet
Download GMBD4148 Datasheet




 GMBD4148
GMBD4148
1/1
Description
The GMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the
silicon epitaxial planar process and packed in plastic surface mount package.
Package Dimensions
Style : Pin 1.Anode 2.NC 3.Cathode
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
www.DataSheet4U.com Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Continuous Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current
Symbol
Tj
Tstg
VR
IF
IFSM
Characteristics
Characteristic
Forward Voltage
Reverse Breakdown
Reverse Current
Total Capacitance
Reverse Recovery Time
at Ta = 25
Symbol
VF
VR
IR
CT
Trr
Min.
-
100
-
-
-
Max.
1
-
5
4
4
Ratings
+150
-65~+150
70
200
500
Unit
V
mA
mA
Unit
V
V
uA
pF
nS
Test Conditions
IF=10mA
IR=100uA
VR=75V
VR=0V,F=1MHz
IF=IR=10mA, RL=100 Measured at IR=1mA
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165














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