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PLANAR TRANSISTOR. GMBT2222A Datasheet

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PLANAR TRANSISTOR. GMBT2222A Datasheet






GMBT2222A TRANSISTOR. Datasheet pdf. Equivalent




GMBT2222A TRANSISTOR. Datasheet pdf. Equivalent





Part

GMBT2222A

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


CORPORATION G M BT 2 2 2 2 A Description Features High frequency current gain H igh speed switching For complementary u se with PNP type GMBT2907A ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B NPN E PITAX I AL PL ANAR T RANSI STOR The GMBT2222A is designed for general purpose amplifier and high speed, mediu m-power switching applications. Packag e Dimensions REF..
Manufacture

GTM

Datasheet
Download GMBT2222A Datasheet


GTM GMBT2222A

GMBT2222A; A B C D E F www.DataSheet4U.com Millim eter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Stor age Temperature Collector to Base Volta ge at Ta=25 Collector to Emitter Voltag e at Ta=25 Emitter.


GTM GMBT2222A

to Base Voltage at Ta=25 Collector Curr ent at Ta=25 Total Power Dissipation at Ta=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 75 40 6 600 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE( sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob at Ta = 25 Min. 75 40 6 35 50 75 1 00 40 300 Typ. Max.


GTM GMBT2222A

. 10 10 10 500 1.0 1.2 2.0 300 8 MHz pF Unit V V V nA nA nA mV V V V IC=100uA , IE=0 IC=10mA, IB=0 IE=10uA, IC=0 VCB=6 0V, IE=0 VCE=60V ,VEB(OFF)=3V VEB=3V, I C=0 IC=380mA, IB=10mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VC E=10V, IC=100uA VCE=10V, IC=1mA VCE=10V , IC=10mA VCE=10V, IC=150mA VCE=10V, IC =500mA VCB=20V, IC=20mA, f=100MHz VCB=1 0V, IE=0, f=1MHz *.

Part

GMBT2222A

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


CORPORATION G M BT 2 2 2 2 A Description Features High frequency current gain H igh speed switching For complementary u se with PNP type GMBT2907A ISSUED DATE :2001/03/12 REVISED DATE :2005/06/27B NPN E PITAX I AL PL ANAR T RANSI STOR The GMBT2222A is designed for general purpose amplifier and high speed, mediu m-power switching applications. Packag e Dimensions REF..
Manufacture

GTM

Datasheet
Download GMBT2222A Datasheet




 GMBT2222A
CORPORATION ISSUED DATE :2001/03/12
REVISED DATE :2005/06/27B
GMBT2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
High frequency current gain
High speed switching
For complementary use with PNP type GMBT2907A
Package Dimensions
www.DataSheet4U.com Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Collector to Base Voltage at Ta=25
Collector to Emitter Voltage at Ta=25
Emitter to Base Voltage at Ta=25
Collector Current at Ta=25
Total Power Dissipation at Ta=25
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
300
-
Ta = 25
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
8
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
+150
-55 ~ +150
75
40
6
600
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
nA
mV
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VCE=60V ,VEB(OFF)=3V
VEB=3V, IC=0
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
1/4




 GMBT2222A
Switching Characteristics
Symbol
Min.
Typ.
td (Delay Time)
-
-
tr (Rise Time) - -
ts (Storage Time)
-
-
tf (Fall Time)
--
CORPORATION ISSUED DATE :2001/03/12
REVISED DATE :2005/06/27B
Max.
10
25
225
60
Unit
ns
ns
ns
ns
Test Conditions
VCC=30V, VBE(off)=-0.5V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA,
IB1=IB2=15mA
Switching Time Equivalent Test Circuits
Turn-On Time
Characteristics Curve
Turn-Off Time
Fig 1. DC Current Gain
Fig 2. Collector saturation Region
2/4




 GMBT2222A
CORPORATION ISSUED DATE :2001/03/12
REVISED DATE :2005/06/27B
Fig 3. Turn-On Time
Fig 4. Turn-Off Time
Fig 5. Frequency Effects
Fig 6. Source Resistance Effects
Fig 7. Capacitance
Fig 8. Current-Gain Bandwidth Product
3/4






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