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PLANAR TRANSISTOR. GMBT3019 Datasheet

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PLANAR TRANSISTOR. GMBT3019 Datasheet






GMBT3019 TRANSISTOR. Datasheet pdf. Equivalent




GMBT3019 TRANSISTOR. Datasheet pdf. Equivalent





Part

GMBT3019

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


GM BT3019 Description Package Dimensions 1/1 NP N E PITAXI AL P L ANAR T RANS ISTO R The GMBT3019 is designed for ge neral purpose amplifier applications an d switching requiring collector current s 1A. REF. A B C D E F Millimeter Min . Max. 2.70 3.10 2.40 2.80 1.40 1.60 0. 35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.0 0 1.30 0.10 0.20 0.
Manufacture

GTM

Datasheet
Download GMBT3019 Datasheet


GTM GMBT3019

GMBT3019; .40 0.85 1.15 0 10 Unit Absolute Maximu m Ratings at Ta = 25 Parameter Junction Temperature www.DataSheet4U.com Symbo l Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 140 80 7 1 350 Storag e Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter t o Base Voltage Collector Current Total Power Dissipation V V V A mW Characte ristics Symbol BVC.


GTM GMBT3019

BO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sa t) hFE1 hFE2 hFE3 hFE4 hFE5 fT Cob at Ta = 25 Min. 140 80 7 50 90 100 50 15 1 00 Typ. Max. 50 50 0.2 1.1 300 12 MHz p F Unit V V V nA nA V V IC=100uA IC=30mA IE=100uA VCB=90V VEB=5V IC=150mA, IB=1 5mA IC=150mA, IB=15mA VCE=10V, IC=0.1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE =10V, IC=500mA VCE=10V, IC=1000mA VCE=5 0mV, IC=50mA, f=10.


GTM GMBT3019

0MHz VCE=10V, IE=0, f=1MHz Test Conditio ns Important Notice: All rights are re served. Reproduction in whole or in par t is prohibited without the prior writt en approval of GTM. GTM reserves the ri ght to make changes to its products wit hout notice. GTM semiconductor products are not warranted to be suitable for u se in life-support Applications, or sys tems. GTM assumes .

Part

GMBT3019

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


GM BT3019 Description Package Dimensions 1/1 NP N E PITAXI AL P L ANAR T RANS ISTO R The GMBT3019 is designed for ge neral purpose amplifier applications an d switching requiring collector current s 1A. REF. A B C D E F Millimeter Min . Max. 2.70 3.10 2.40 2.80 1.40 1.60 0. 35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.0 0 1.30 0.10 0.20 0.
Manufacture

GTM

Datasheet
Download GMBT3019 Datasheet




 GMBT3019
GMBT3019
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A.
Package Dimensions
1/1
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
www.DataSheet4U.com Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics at
Ta = 25
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
140
80
7
-
-
-
-
50
90
100
50
15
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.2
1.1
-
-
300
-
-
-
12
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
+150
-55 ~ +150
140
80
7
1
350
Unit
V
V
V
A
mW
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100uA
IC=30mA
IE=100uA
VCB=90V
VEB=5V
IC=150mA, IB=15mA
IC=150mA, IB=15mA
VCE=10V, IC=0.1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=1000mA
VCE=50mV, IC=50mA, f=100MHz
VCE=10V, IE=0, f=1MHz
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165














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